Patents by Inventor Michael Koh

Michael Koh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Rotor for an actuator
    Patent number: 12549061
    Abstract: A rotor comprising a rotor body having at least a portion configured to cooperate with a shaft, a support member configured to cooperate with at least one of the portion of the rotor body and the shaft, and a resilient member configured to cooperate with at least one of the portion of the rotor body, the shaft, and the support member to substantially maintain coaxial alignment of the shaft and the rotor. The rotor is part of an actuator of a fluid valve system.
    Type: Grant
    Filed: February 3, 2023
    Date of Patent: February 10, 2026
    Assignee: HANON SYSTEMS
    Inventors: Michael Koh, Benjamin Paul Mahoney
  • ROTOR FOR AN ACTUATOR
    Publication number: 20240266910
    Abstract: A rotor comprising a rotor body having at least a portion configured to cooperate with a shaft, a support member configured to cooperate with at least one of the portion of the rotor body and the shaft, and a resilient member configured to cooperate with at least one of the portion of the rotor body, the shaft, and the support member to substantially maintain coaxial alignment of the shaft and the rotor. The rotor is part of an actuator of a fluid valve system.
    Type: Application
    Filed: February 3, 2023
    Publication date: August 8, 2024
    Inventors: Michael Koh, Benjamin Paul Mahoney
  • Single transistor non-volatile electrically alterable semiconductor memory device
    Patent number: 5493138
    Abstract: An improved electrically programmable and erasable memory device having a plurality of addressable single transistor cells, each transistor having spaced source and drain regions, a floating gate and a control gate. The improvement is a new tunneling insulator layer structure between the floating gate and the control gate. The improved tunneling layer is a dual layer formed of a outer silicon oxide layer and an inner silicon oxynitride layer.
    Type: Grant
    Filed: December 1, 1994
    Date of Patent: February 20, 1996
    Assignee: Chartered Semiconductor Mfg PTE
    Inventor: Michael Koh
  • Method for making single transistor non-volatile electrically alterable semiconductor memory device
    Patent number: 5371028
    Abstract: An improved electrically programmable and erasable memory device having a plurality of addressable single transistor cells, each transistor having spaced source and drain regions, a floating gate and a control gate. The improvement is a new tunneling insulator layer structure between the floating gate and the control gate. The improved tunneling layer is a dual layer formed of a outer silicon oxide layer and an inner silicon oxynitride layer.
    Type: Grant
    Filed: August 2, 1993
    Date of Patent: December 6, 1994
    Assignee: Chartered Semiconductor Manufacturing Pte Ltd.
    Inventor: Michael Koh