Abstract: Cleaning compositions and processes for removing residue from a microelectronic device having said residue thereon. The composition, which is substantially devoid of fluoride species, amine species, and organic solvents, achieves highly efficacious cleaning of the residue material, including post-etch residue, post-ash residue and/or post-CMP residue, from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon.

Abstract: Chemical formulations and methods for removing unwanted material, such as unexposed photoresist, metal oxides, CMP residue, and the like, from semiconductor wafers or other substrates. The formulations utilize a supercritical fluid-based cleaning composition, which may further include (I) co-solvent(s), (II) surfactant(s), (III) chelating agent(s), and/or (IV) chemical reactant(s).

Abstract: A method and self assembled monolayer (SAM)-containing compositions for removing bulk and hardened photoresist material from microelectronic devices have been developed. The SAM-containing composition includes at least one solvent, at least one catalyst, at least one SAM component, and optionally a surfactant. The SAM-containing compositions effectively remove the hardened photoresist material while simultaneously passivating the underlying silicon-containing layer(s) in a one step process.

Abstract: A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched substrates experience lower incidents of stiction relative to substrates etched using conventional wet etching techniques.

Abstract: Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the substrate surface. Such approach permits use of precursors that otherwise would be wholly unsuitable for deposition applications, as lacking requisite volatility and transport characteristics for vapor phase deposition processes.

Abstract: A composition including supercritical fluid and at least one additive selected from fluoro species, and primary and/or secondary amines, optionally with co-solvent, low k material attack-inhibitor(s) and/or surfactant(s). The composition has particular utility for cleaning of semiconductor wafers to remove post-ashing residues therefrom.

Abstract: A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source, an aluminum ion complexing agent and, optionally, corrosion inhibitor. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the post-etch residue and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having ashed or unashed aluminum/SiN/Si post-etch residue thereon.

Abstract: Drying of patterned wafers is achieved in a manner effecting removal of water from the patterned wafers without collapse or deterioration of the pattern structures thereof. The drying is carried out in one aspect of the invention with a composition containing supercritical fluid, and at least one water-reactive agent that chemically reacts with water to form reaction product(s) more soluble in the supercritical fluid than water. Various methodologies are described for use of supercritical fluids to dry patterned wafers, which avoid the (low water solubility) deficiency of supercritical fluids such as supercritical CO2.

Abstract: Drying of patterned wafers is achieved in a manner effecting removal of water from the patterned wafers without collapse or deterioration of the pattern structures thereof. The drying is carried out in one aspect of the invention with a composition containing supercritical fluid, and at least one water-reactive agent that chemically reacts with water to form reaction product(s) more soluble in the supercritical fluid than water. Various methodologies are described for use of supercritical fluids to dry patterned wafers, which avoid the (low water solubility) deficiency of supercritical fluids such as supercritical CO2.

Abstract: A photoresist cleaning composition for removing photoresist and ion implanted photoresist from semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2) and alcohol for use in removing photoresist that is not ion-implanted. When the photoresist has been subjected to ion implantation, the cleaning composition additionally contains a fluorine ion source. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the photoresist and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having photoresist or ion implanted photoresist thereon.

Abstract: A cleaning composition for cleaning particulate contamination from small dimensions on microelectronic device substrates. The cleaning composition contains dense CO2 (preferably supercritical CO2 (SCCO2)), alcohol, fluoride source, anionic surfactant source, non-ionic surfactant source, and optionally, hydroxyl additive. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in particulate contamination on wafer substrates and that must be removed from the microelectronic device substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having particulate contamination on Si/SiO2 substrates.

Abstract: A method and composition for removing a bottom anti-reflection coating (BARC) layer from semiconductor substrates having such BARC layers is described. The removal composition includes a supercritical fluid, a co-solvent, an etchant and a surfactant. Such removal compositions overcome the intrinsic deficiency of SCCO2 as a removal reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that must be removed from the semiconductor substrate.

Abstract: A composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) materials from a substrate having such material(s) thereon. The composition includes a base component, such as a quaternary ammonium base in combination with an alkali or alkaline earth base, or alternatively a strong base in combination with an oxidant. The composition may be utilized in aqueous medium, e.g., with chelator, surfactant, and/or co-solvent species, to achieve high-efficiency removal of photoresist and/or SARC materials in the manufacture of integrated circuitry, without adverse effect on metal species on the substrate, such as copper, aluminum and/or cobalt alloys, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.

Abstract: A method and composition for removing silicon-containing particulate material, such as silicon nitrides and silicon oxides, from patterned Si/SiO2 semiconductor wafer surfaces is described. The composition includes a supercritical fluid (SCF), an etchant species, a co-solvent, a surface passivator, a binder, deionized water, and optionally a surfactant. The SCF-based compositions substantially remove the contaminating particulate material from the wafer surface prior to subsequent processing, thus improving the morphology, performance, reliability and yield of the semiconductor device.

Abstract: A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched substrates experience lower incidents of stiction relative to substrates etched using conventional wet etching techniques.

Abstract: A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid, an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched MEMS substrates experience lower incidents of stiction relative to MEMS substrates etched using conventional wet etching techniques.

Abstract: Drying of patterned wafers is achieved in a manner effecting removal of water from the patterned wafers without collapse or deterioration of the pattern structures thereof. The drying is carried out in one aspect of the invention with a composition containing supercritical fluid, and at least one water-reactive agent that chemically reacts with water to form reaction product(s) more soluble in the supercritical fluid than water. Various methodologies are described for use of supercritical fluids to dry patterned wafers, which avoid the (low water solubility) deficiency of supercritical fluids such as supercritical CO2.