Patents by Inventor Michael Kountz

Michael Kountz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating semiconductor by nitrogen doping of silicon film
    Patent number: 7638413
    Abstract: A method of fabricating a semiconductor uses chemical vapor deposition, or plasma-enhanced chemical vapor deposition, to deposit an amorphous silicon film on an exposed surface of a substrate, such as ASIC wafer. The amorphous silicon film is doped with nitrogen to reduce the conductivity of the film and/or to augment the breakdown voltage of the film. Nitrogen gas, N2, is activated or ionized in a reactor before it is deposited on the substrate.
    Type: Grant
    Filed: April 4, 2005
    Date of Patent: December 29, 2009
    Assignee: Pan Jit Americas, Inc.
    Inventors: Michael Kountz, George Engle, Steven Evers
  • Low temperature texturing layer to enhance adhesion of subsequent layers
    Patent number: 7314832
    Abstract: A method of forming a film on a substrate. In accordance with the invention, an adhesion layer is formed on the substrate. The adhesion layer is chemically bonded to the substrate and has a textured surface. The film is then formed on the textured surface of the adhesion layer.
    Type: Grant
    Filed: April 4, 2005
    Date of Patent: January 1, 2008
    Assignee: Pan Jit Americas, Inc.
    Inventors: Michael Kountz, Randy Olsen, Michael Adamson
  • Method of fabricating semiconductor by nitrogen doping of silicon film
    Publication number: 20050233553
    Abstract: A method of fabricating a semiconductor uses chemical vapor deposition, or plasma-enhanced chemical vapor deposition, to deposit an amorphous silicon film on an exposed surface of a substrate, such as ASIC wafer. The amorphous silicon film is doped with nitrogen to reduce the conductivity of the film and/or to augment the breakdown voltage of the film. Nitrogen gas, N2, is activated or ionized in a reactor before it is deposited on the substrate.
    Type: Application
    Filed: April 4, 2005
    Publication date: October 20, 2005
    Inventors: Michael Kountz, George Engle, Steven Evers
  • Low temperature texturing layer to enhance adhesion of subsequent layers
    Publication number: 20050230776
    Abstract: A method of forming a film on a substrate. In accordance with the invention, an adhesion layer is formed on the substrate. The adhesion layer is chemically bonded to the substrate and has a textured surface. The film is then formed on the textured surface of the adhesion layer.
    Type: Application
    Filed: April 4, 2005
    Publication date: October 20, 2005
    Inventors: Michael Kountz, Randy Olsen, Michael Adamson