Patents by Inventor Michael Krames
Michael Krames has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12286576Abstract: The invention relates to lighting emitting devices and systems comprising a luminescent composition, said luminescent composition comprising: (i) a first emitting material, said first emitting material having a host lattice doped with EU3+ ions; (ii) a second emitting material, said second emitting material having a host lattice doped with Tb3+ ions; and (iii) sensitizer material, which sensitizer material is excitable in the violet-to-blue (400 to 480 nm) wavelength range and has an emission spectrum which overlaps at least partly with one or more excitation bands of the first emitting material and with which overlaps at least partly with one or more excitation bands of the second emitting material.Type: GrantFiled: September 13, 2019Date of Patent: April 29, 2025Assignee: Seaborough Materials IP B.V.Inventors: Michael Krames, Marie Anne Van De Haar
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Patent number: 11879085Abstract: The invention relates to a converter system, for instance for a light emitting device, comprising: —a first material, which comprises, preferably essentially consists of an emitting material, emitting a color of interest, and is essentially free of sensitizer material, —a second sensitizer material, which is essentially free of the first material and absorbs light (is excitable) in the wavelength range of interest and its emission spectrum overlaps at least partly with one or more excitation bands of the first material.Type: GrantFiled: September 27, 2021Date of Patent: January 23, 2024Assignee: SEABOROUGH IP I B.V.Inventors: Michael Krames, Marie Anne Van de Haar
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Publication number: 20230197695Abstract: An LED array on a sapphire substrate may be mounted on a silicon interconnect chip, with LEDs of the array inserted into holes of waveguides on the silicon interconnect chip. The sapphire substrate and the silicon interconnect chip may both have microbumps for carrying electrical signals to or from the LEDs, and the sapphire substrate and silicon interconnect chip may be bonded together using the microbumps. The LEDs may be configured to preferentially emit light in a lateral direction, for increased coupling of light into the waveguides.Type: ApplicationFiled: February 10, 2023Publication date: June 22, 2023Inventors: Michael Krames, Bardia Pezeshki, Robert Kalman, Cameron Danesh
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Patent number: 11605618Abstract: An LED array on a sapphire substrate may be mounted on a silicon interconnect chip, with LEDs of the array inserted into holes of waveguides on the silicon interconnect chip. The sapphire substrate and the silicon interconnect chip may both have microbumps for carrying electrical signals to or from the LEDs, and the sapphire substrate and silicon interconnect chip may be bonded together using the microbumps. The LEDs may be configured to preferentially emit light in a lateral direction, for increased coupling of light into the waveguides.Type: GrantFiled: March 17, 2021Date of Patent: March 14, 2023Assignee: AVICENATECH CORP.Inventors: Michael Krames, Bardia Pezeshki, Robert Kalman, Cameron Danesh
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Patent number: 11233181Abstract: The present invention relates to a light emitting device comprising a red-emitting Eu3+ material and green emitting Ce3+ material which are matched so that the resulting white light has an increased lumen equivalent of radiation for a given color rendering index than with the prior art.Type: GrantFiled: October 20, 2017Date of Patent: January 25, 2022Assignee: SEABOROUGH IP I B.V.Inventors: Michael Krames, Marie Anne Van De Haar
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Patent number: 11162026Abstract: The invention relates to a converter system, for instance for a light emitting device, comprising: —a first material, which comprises, preferably essentially consists of an emitting material, emitting a color of interest, and is essentially free of sensitizer material, —a second sensitizer material, which is essentially free of the first material and absorbs light (is excitable) in the wavelength range of interest and its emission spectrum overlaps at least partly with one or more excitation bands of the first material.Type: GrantFiled: March 16, 2018Date of Patent: November 2, 2021Assignee: Seaborough IP I B.V.Inventors: Michael Krames, Marie Anne Van de Haar
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Publication number: 20210296292Abstract: An LED array on a sapphire substrate may be mounted on a silicon interconnect chip, with LEDs of the array inserted into holes of waveguides on the silicon interconnect chip. The sapphire substrate and the silicon interconnect chip may both have microbumps for carrying electrical signals to or from the LEDs, and the sapphire substrate and silicon interconnect chip may be bonded together using the microbumps. The LEDs may be configured to preferentially emit light in a lateral direction, for increased coupling of light into the waveguides.Type: ApplicationFiled: March 17, 2021Publication date: September 23, 2021Inventors: Michael Krames, Bardia Pezeshki, Robert Kalman, Cameron Danesh
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Publication number: 20200063031Abstract: The invention relates to a converter system, for instance for a light emitting device, comprising: —a first material, which comprises, preferably essentially consists of an emitting material, emitting a color of interest, and is essentially free of sensitizer material, —a second sensitizer material, which is essentially free of the first material and absorbs light (is excitable) in the wavelength range of interest and its emission spectrum overlaps at least partly with one or more excitation bands of the first material.Type: ApplicationFiled: March 16, 2018Publication date: February 27, 2020Inventors: Michael Krames, Marie Anne Van de Haar
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Patent number: 9589792Abstract: High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.Type: GrantFiled: November 25, 2013Date of Patent: March 7, 2017Assignee: Soraa, Inc.Inventors: Wenkan Jiang, Mark P. D'Evelyn, Derrick S. Kamber, Dirk Ehrentraut, Michael Krames
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Patent number: 8905588Abstract: An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.Type: GrantFiled: April 18, 2014Date of Patent: December 9, 2014Assignee: Sorra, Inc.Inventors: Michael Krames, Troy Trottier, Frank Steranka, William Houck, Arpan Chakraborty
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Publication number: 20140225137Abstract: An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.Type: ApplicationFiled: April 18, 2014Publication date: August 14, 2014Applicant: Soraa, Inc.Inventors: Michael Krames, Troy Trottier, Frank Steranka, William Houck, Arpan Chakraborty
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Patent number: 8740413Abstract: An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.Type: GrantFiled: December 16, 2011Date of Patent: June 3, 2014Assignee: Soraa, Inc.Inventors: Michael Krames, Troy Trottier, Frank Steranka, William Houck, Arpan Chakraborty
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Patent number: 8471280Abstract: In one embodiment, a flip chip LED is formed with a high density of gold posts extending from a bottom surface of its n-layer and p-layer. The gold posts are bonded to submount electrodes. An underfill material is then molded to fill the voids between the bottom of the LED and the submount. The underfill comprises a silicone molding compound base and about 70-80%, by weight, alumina (or other suitable material). Alumina has a thermal conductance that is about 25 times better than that of the typical silicone underfill, which is mostly silica. The alumina is a white powder. The underfill may also contain about 5-10%, by weight, TiO2 to increase the reflectivity. LED light is reflected upward by the reflective underfill, and the underfill efficiently conducts heat to the submount. The underfill also randomizes the light scattering, improving light extraction. The distributed gold posts and underfill support the LED layers during a growth substrate lift-off process.Type: GrantFiled: November 6, 2009Date of Patent: June 25, 2013Assignee: Koninklijke Philips Electronics N.V.Inventors: Rafael I. Aldaz, Grigoriy Basin, Paul S. Martin, Michael Krames
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Publication number: 20080070334Abstract: A photonic crystal light emitting diode (“PXLED”) is provided. The PXLED includes a periodic structure, such as a lattice of holes, formed in the semiconductor layers of an LED. The parameters of the periodic structure are such that the energy of the photons, emitted by the PXLED, lies close to a band edge of the band structure of the periodic structure. Metal electrode layers have a strong influence on the efficiency of the PXLEDs. Also, PXLEDs formed from GaN have a low surface recombination velocity and hence a high efficiency. The PXLEDs are formed with novel fabrication techniques, such as the epitaxial lateral overgrowth technique over a patterned masking layer, yielding semiconductor layers with low defect density. Inverting the PXLED to expose the pattern of the masking layer or using the Talbot effect to create an aligned second patterned masking layer allows the formation of PXLEDs with low defect density.Type: ApplicationFiled: October 8, 2007Publication date: March 20, 2008Applicants: PHILIPS LUMILEDS LIGHTING COMPANY, LLC, AVAGO TECHNOLOGIES GENERAL IP PTE. LTD.Inventors: Michael Krames, Mihail Sigalas, Jonathan Wierer
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Publication number: 20080023719Abstract: Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element.Type: ApplicationFiled: October 8, 2007Publication date: January 31, 2008Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Michael Camras, Michael Krames, Wayne Snyder, Frank Steranka, Robert Taber, John Uebbing, Douglas Pocius, Troy Trottier, Christopher Lowery, Gerd Mueller, Regina Mueller-Mach, Gloria Hofler
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Publication number: 20070267646Abstract: A semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region and a photonic crystal formed within or on a surface of the semiconductor structure is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor.Type: ApplicationFiled: July 27, 2007Publication date: November 22, 2007Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Jonathan Wierer, Serge Bierhuizen, Aurelien David, Michael Krames, Richard Weiss
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Publication number: 20070145384Abstract: In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×1018 cm3 and 5×1019 cm?3. A second spacer layer, which is disposed between the p-type region and the light emitting layer, is not intentionally doped or doped to a dopant concentration less than 6×1018 cm?3.Type: ApplicationFiled: March 5, 2007Publication date: June 28, 2007Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Nathan Gardner, Gangyi Chen, Werner Goetz, Michael Krames, Gerd Mueller, Yu-Chen Shen, Satoshi Watanabe
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Publication number: 20070131961Abstract: To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.Type: ApplicationFiled: February 6, 2007Publication date: June 14, 2007Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Michael Krames, Nathan Gardner, Frank Steranka
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Publication number: 20070126017Abstract: A semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is attached to a compound substrate including a host which provides mechanical support to the device and a ceramic layer including a luminescent material. In some embodiments the compound substrate includes a crystalline seed layer on which the semiconductor structure is grown. The ceramic layer is disposed between the seed layer and the host. In some embodiments, the compound substrate is attached to the semiconductor structure compound substrate is spaced apart from the semiconductor structure and does not provide mechanical support to the structure. In some embodiments, the ceramic layer has a thickness less than 500 ?m.Type: ApplicationFiled: November 29, 2005Publication date: June 7, 2007Inventors: Michael Krames, Peter Schmidt
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Publication number: 20070072324Abstract: A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.Type: ApplicationFiled: September 27, 2005Publication date: March 29, 2007Inventors: Michael Krames, Nathan Gardner, John Epler