Abstract: A radiation-emitting component includes a radiation source; a transparent material disposed in the beam path of the component and including a polymer material and filler particles, wherein the filler particles include an inorganic filler material and a phosphonic acid derivative or phosphoric acid derivative attached to a surface thereof and through which the filler particles are crosslinked with the polymer material.

Abstract: A method of producing a semiconductor component includes providing an optoelectronic semiconductor chip; applying a molding compound for an optical element, wherein the molding compound is based on a highly refractive polymer material; precuring the molding compound at a temperature of at most 50° C.; and curing the molding compound.

Abstract: An optoelectronic component is specified. According to at least one embodiment of the invention, the optoelectronic component comprises a housing (20) and a radiation-emitting or radiation-receiving semiconductor chip (10) arranged in the housing (20). Furthermore, the component comprises an optical element (50), which contains a polymer material comprising a silicone. The silicone contains at least 40% by weight of cyclic siloxanes, and at least 40% of the silicon atoms of the cyclic siloxanes are crosslinked with a further silicon atom of the silicon via alkylene and/or alkylarylene groups.

Abstract: A method of producing a semiconductor component includes providing an optoelectronic semiconductor chip; applying a molding compound for an optical element, wherein the molding compound is based on a highly refractive polymer material; precuring the molding compound at a temperature of at most 50° C.; and curing the molding compound.

Abstract: A semiconductor component includes an optoelectronic semiconductor chip and an optical element arranged on a radiation passage area of the semiconductor chip, wherein the optical element is based on a highly refractive polymer material.

Abstract: A method for producing an optoelectronic device and an optoelectronic device is disclosed. According to at least one embodiment, an optoelectronic device is provided, which comprises a housing, a radiation-emitting or radiation-receiving semiconductor chip which is arranged in the housing, and an optical element which is arranged in a beam path of the device. The optical element comprises an amphiphilic block copolymer which contains polysiloxane as a hydrophobic polymer and a hydrophilic polymer cross-linked therewith. The optical element further comprises thermally conductive nanoparticles which are distributed in the amphiphilic block copolymer and comprise a material which is selected from the group comprising a metal, a metal oxide, a metal hydroxide and a combination thereof.

Abstract: A method for manufacturing an optoelectronic semiconductor component, comprising: providing a semiconductor chip in a composite wafer, comprising an active side for emitting a primary radiation and a contact terminal which is arranged on the active side; depositing a coupling element on the active side; attaching a luminescence conversion element, for converting part of the primary radiation into a secondary radiation, to the coupling element.

Abstract: An optoelectronic semiconductor device including a carrier substrate and at least one semiconductor chip arranged thereon, wherein the semiconductor chip includes an active layer that generates radiation, conductor tracks electrically contacting the semiconductor chip arranged on the carrier substrate, the semiconductor chip is enclosed in a potting material, and the potting material includes at least a first potting layer, a second potting layer and a third potting layer, which differ from one another in at least one of: their material composition, their optical properties and their chemical properties.

Abstract: A method for producing an optoelectronic device and an optoelectronic device is disclosed. According to at least one embodiment, an optoelectronic device is provided, which comprises a housing, a radiation-emitting or radiation-receiving semiconductor chip which is arranged in the housing, and an optical element which is arranged in a beam path of the device. The optical element comprises an amphiphilic block copolymer which contains polysiloxane as a hydrophobic polymer and a hydrophilic polymer cross-linked therewith. The optical element further comprises thermally conductive nanoparticles which are distributed in the amphiphilic block copolymer and comprise a material which is selected from the group comprising a metal, a metal oxide, a metal hydroxide and a combination thereof.

Abstract: An optoelectronic component is specified. According to at least one embodiment of the invention, the optoelectronic component comprises a housing (20) and a radiation-emitting or radiation-receiving semiconductor chip (10) arranged in the housing (20). Furthermore, the component comprises an optical element (50), which contains a polymer material comprising a silicone. The silicone contains at least 40% by weight of cyclic siloxanes, and at least 40% of the silicon atoms of the cyclic siloxanes are crosslinked with a further silicon atom of the silicon via alkylene and/or alkylarylene groups.

Abstract: A radiation-emitting component includes a radiation source; a transparent material disposed in the beam path of the component and including a polymer material and filler particles, wherein the filler particles include an inorganic filler material and a phosphonic acid derivative or phosphoric acid derivative attached to a surface thereof and through which the filler particles are crosslinked with the polymer material.

Abstract: A method for manufacturing an optoelectronic semiconductor component, comprising: providing a semiconductor chip in a composite wafer, comprising an active side for emitting a primary radiation and a contact terminal which is arranged on the active side; depositing a coupling element on the active side; attaching a luminescence conversion element, for converting part of the primary radiation into a secondary radiation, to the coupling element.

Abstract: A method for manufacturing an optoelectronic semiconductor component, comprising: providing a semiconductor chip in a composite wafer, comprising an active side for emitting a primary radiation and a contact terminal which is arranged on the active side; depositing a coupling element on the active side; attaching a luminescence conversion element, for converting part of the primary radiation into a secondary radiation, to the coupling element.

Abstract: An optoelectronic semiconductor device including a carrier substrate and at least one semiconductor chip arranged thereon, wherein the semiconductor chip includes an active layer that generates radiation, conductor tracks electrically contacting the semiconductor chip arranged on the carrier substrate, the semiconductor chip is enclosed in a potting material, and the potting material includes at least a first potting layer, a second potting layer and a third potting layer, which differ from one another in at least one of: their material composition, their optical properties and their chemical properties.

Abstract: A semiconductor component includes an optoelectronic semiconductor chip and an optical element arranged on a radiation passage area of the semiconductor chip, wherein the optical element is based on a highly refractive polymer material.

Abstract: A method for manufacturing an optoelectronic semiconductor component, comprising: providing a semiconductor chip in a composite wafer, comprising an active side for emitting a primary radiation and a contact terminal which is arranged on the active side; depositing a coupling element on the active side; attaching a luminescence conversion element, for converting part of the primary radiation into a secondary radiation, to the coupling element.