Patents by Inventor Michael Kuby
Michael Kuby has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11763404Abstract: Systems, methods, and apparatuses for implementing a geo-demographic zoning optimization engine are disclosed.Type: GrantFiled: June 15, 2021Date of Patent: September 19, 2023Assignee: Arizona Board of Regents on behalf of Arizona State UniversityInventors: Jon J. Miller, Vikash Bajaj, Srinivasa Srivatsav Kandala, Fangwu Wei, Michael Kuby, Wangshu Mu, Daoqin Tong
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Publication number: 20230016664Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: ApplicationFiled: July 26, 2022Publication date: January 19, 2023Applicant: ASML NETHERLANDS B.V.Inventors: Kaustuve BHATTACHARYYA, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
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Patent number: 11433312Abstract: Disclosed herein are systems, methods, and apparatuses for implementing an online map-based sports fantasy game competition.Type: GrantFiled: September 5, 2020Date of Patent: September 6, 2022Assignee: Geo Fantasy Sports, LLCInventors: Michael Kuby, Daniel Krahenbuhl, Scott Kelley, Kevin Kane, Don Eugene-Nolan Gibson
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Patent number: 11428521Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: GrantFiled: November 5, 2021Date of Patent: August 30, 2022Assignee: ASML Netherlands B.V.Inventors: Kaustuve Bhattacharyya, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
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Patent number: 11385553Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.Type: GrantFiled: May 3, 2021Date of Patent: July 12, 2022Assignee: ASML Netherlands B.V.Inventors: Zili Zhou, Nitesh Pandey, Olger Victor Zwier, Patrick Warnaar, Maurits Van Der Schaar, Elliott Gerard McNamara, Arie Jeffrey Den Boef, Paul Christiaan Hinnen, Murat Bozkurt, Joost Jeroen Ottens, Kaustuve Bhattacharyya, Michael Kubis
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Patent number: 11204239Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: GrantFiled: July 17, 2020Date of Patent: December 21, 2021Assignee: ASML Netherlands B.V.Inventors: Kaustuve Bhattacharyya, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
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Publication number: 20210390650Abstract: Systems, methods, and apparatuses for implementing a geo-demographic zoning optimization engine are disclosed.Type: ApplicationFiled: June 15, 2021Publication date: December 16, 2021Inventors: Jon J. Miller, Vikash Bajaj, Srinivasa Srivatsav Kandala, Fangwu Wei, Michael Kuby, Wangshu Mu, Daoqin Tong
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Patent number: 11170072Abstract: A method including evaluating, with respect to a parameter representing remaining uncertainty of a mathematical model fitting measured data, one or more mathematical models for fitting measured data and one or more measurement sampling schemes for measuring data, against measurement data across a substrate, and identifying one or more mathematical models and/or one or more measurement sampling schemes, for which the parameter crosses a threshold.Type: GrantFiled: March 25, 2016Date of Patent: November 9, 2021Assignee: ASML Netherands B.V.Inventors: Everhardus Cornelis Mos, Velislava Ignatova, Erik Jensen, Michael Kubis, Hubertus Johannes Gertrudus Simons, Peter Ten Berge, Erik Johannes Maria Wallerbos, Jochem Sebastiaan Wildenberg
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Patent number: 11048174Abstract: A method, and associated apparatus and computer program, to determine corrections for a parameter of interest, such as critical dimension, of a patterning process. The method includes determining an exposure control correction for an exposure control parameter and, optionally, determining a process control correction for a process control parameter, based upon a measurement of the parameter of interest of a structure, and an exposure control relationship and a process control relationship. The exposure control relationship describes the dependence of the parameter of interest on the exposure control parameter and the process control relationship describes the dependence of the parameter of interest on the process control parameter. The exposure control correction and process control correction may be co-optimized to minimize variation of the parameter of interest of subsequent exposed and processed structures relative to a target parameter of interest.Type: GrantFiled: February 16, 2017Date of Patent: June 29, 2021Assignees: ASML Netherlands B.V., LAM Research CorporationInventors: Michael Kubis, Marinus Jochemsen, Richard Stephen Wise, Nader Shamma, Girish Anant Dixit, Liesbeth Reijnen, Ekaterina Mikhailovna Viatkina, Melisa Luca, Johannes Catharinus Hubertus Mulkens
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Patent number: 10996570Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.Type: GrantFiled: October 7, 2019Date of Patent: May 4, 2021Assignee: ASML Netherlands B.V.Inventors: Zili Zhou, Nitesh Pandey, Olger Victor Zwier, Patrick Warnaar, Maurits Van Der Schaar, Elliott Gerard McNamara, Arie Jeffrey Den Boef, Paul Christiaan Hinnen, Murat Bozkurt, Joost Jeroen Ottens, Kaustuve Bhattacharyya, Michael Kubis
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Publication number: 20210069599Abstract: Disclosed herein are systems, methods, and apparatuses for implementing an online map-based sports fantasy game competition.Type: ApplicationFiled: September 5, 2020Publication date: March 11, 2021Inventors: Michael Kuby, Daniel Krahenbuhl, Scott Kelley, Kevin Kane, Don Eugene-Nolan Gibson
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Patent number: 10915689Abstract: A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.Type: GrantFiled: September 28, 2016Date of Patent: February 9, 2021Assignee: ASML Netherlands B.V.Inventors: Peter Ten Berge, Everhardus Cornelis Mos, Richard Johannes Franciscus Van Haren, Peter Hanzen Wardenier, Erik Jensen, Bernardo Kastrup, Michael Kubis, Johannes Catharinus Hubertus Mulkens, David Frans Simon Deckers, Wolfgang Helmut Henke, Joungchel Lee
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Publication number: 20200348125Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: ApplicationFiled: July 17, 2020Publication date: November 5, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Kaustuve BHATTACHARYYA, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
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Patent number: 10718604Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: GrantFiled: July 10, 2019Date of Patent: July 21, 2020Assignee: ASML Netherlands B.V.Inventors: Kaustuve Bhattacharyya, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
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Patent number: 10634490Abstract: A method of determining an edge roughness parameter has the steps: (1010) controlling a radiation system to provide a spot of radiation at a measurement position for receiving a substrate; (1020) receiving a measurement signal from a sensor for measuring intensity of a forbidden diffraction order (such as a second order) being diffracted by a metrology target at the measurement position when the metrology target is illuminated by the spot of radiation, the metrology target comprising a repetitive pattern being configured by configuration of a linewidth/pitch ratio (of about 0.5) to control an amount of destructive interference that leads to forbidding of the diffraction order, the sensor being configured to provide the measurement signal based on the measured intensity; and (1040) determining an edge roughness parameter based on the measured intensity of the forbidden diffraction order.Type: GrantFiled: May 24, 2018Date of Patent: April 28, 2020Assignee: ASML Netherlands B.V.Inventors: Martin Jacobus Johan Jak, Richard Quintanilha, Arie Jeffrey Den Boef, Michael Kubis
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Patent number: 10386176Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: GrantFiled: August 25, 2015Date of Patent: August 20, 2019Assignee: ASML Netherlands B.V.Inventors: Kaustuve Bhattacharyya, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
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Publication number: 20180364036Abstract: A method of determining an edge roughness parameter has the steps: (1010) controlling a radiation system to provide a spot of radiation at a measurement position for receiving a substrate; (1020) receiving a measurement signal from a sensor for measuring intensity of a forbidden diffraction order (such as a second order) being diffracted by a metrology target at the measurement position when the metrology target is illuminated by the spot of radiation, the metrology target comprising a repetitive pattern being configured by configuration of a linewidth/pitch ratio (of about 0.5) to control an amount of destructive interference that leads to forbidding of the diffraction order, the sensor being configured to provide the measurement signal based on the measured intensity; and (1040) determining an edge roughness parameter based on the measured intensity of the forbidden diffraction order.Type: ApplicationFiled: May 24, 2018Publication date: December 20, 2018Applicant: ASML Netherlands B.V.Inventors: Martin Jacobus Johan JAK, Richard Quintanilha, Arie Jeffrey Den Boef, Michael Kubis
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Patent number: 9946167Abstract: Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The optical system has a first branch leading to a pupil plane imaging sensor and a second branch leading to a substrate plane imaging sensor. A spatial light modulator is arranged in an intermediate pupil plane of the second branch of the optical system. The SLM imparts a programmable pattern of attenuation that may be used to correct for asymmetries between the first and second modes of illumination or imaging. By use of specific target designs and machine-learning processes, the attenuation patterns may also be programmed to act as filter functions, enhancing sensitivity to specific parameters of interest, such as focus.Type: GrantFiled: August 12, 2015Date of Patent: April 17, 2018Assignee: ASML Netherlands B.V.Inventors: Hendrik Jan Hidde Smilde, Arno Jan Bleeker, Willem Marie Julia Marcel Coene, Patrick Warnaar, Michael Kubis
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Patent number: RE49199Abstract: A method of calculating process corrections for a lithographic tool, and associated apparatuses. The method comprises measuring process defect data on a substrate that has been previously exposed using the lithographic tool; fitting a process signature model to the measured process defect data, so as to obtain a model of the process signature for the lithographic tool; and using the process signature model to calculate the process corrections for the lithographic tool.Type: GrantFiled: February 23, 2015Date of Patent: September 6, 2022Assignee: ASML Netherlands B.V.Inventors: Everhardus Cornelis Mos, Hubertus Johannes Gertrudus Simons, Peter Ten Berge, Nicole Schoumans, Michael Kubis, Paul Cornelis Hubertus Aben
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Patent number: RE49460Abstract: A method of calculating process corrections for a lithographic tool, and associated apparatuses. The method comprises measuring process defect data on a substrate that has been previously exposed using the lithographic tool; fitting a process signature model to the measured process defect data, so as to obtain a model of the process signature for the lithographic tool; and using the process signature model to calculate the process corrections for the lithographic tool.Type: GrantFiled: March 3, 2015Date of Patent: March 14, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Everhardus Cornelis Mos, Hubertus Johannes Gertrudus Simons, Peter Ten Berge, Nicole Schoumans, Michael Kubis, Paul Cornelis Hubertus Aben