Abstract: A charge coupler with integrated electrical and mechanical disconnect switching can include a first member. A charging coupler can include a first member and a second member. The second member can be coupled at a first end with the first member. A charging coupler can include a first switch disposed at the first member and operable to cause, in response to a movement of the second member to a first angle with the first member that engages the first switch, a charging device to electrically decouple the charging device from a vehicle. A charging coupler can include a second switch disposed at the first member and operable to cause, in response to a movement of the second member to a second angle with the first member that engages the second switch, the charging device to mechanically decouple the charging device from the vehicle.

Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.

Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.

Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.

Abstract: This application includes multiple embodiments related to capacitors. In some embodiments, capacitors are set forth as having terminal leads that extend in parallel and opposing axial directions. The embodiments discussed herein relate to a capacitor module including one or more anodized pellets for providing a charge storage within the capacitor module. The capacitor module can be configured as a surface mounted or non-surface mounted capacitor module. The capacitor module can include an array of anodized pellets arranged in multiple rows or columns of anodized pellets connected by conductive trace included in the capacitor module. In a non-surface mounted embodiment of the capacitor module, the capacitor module can include cathode and anode connections that are exclusively on the side surfaces of the capacitor module.

Abstract: A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

Abstract: An electronic device may have a housing in which electronic components are mounted. The electronic components may be mounted to a substrate such as a printed circuit board. A heat sink structure may dissipate heat generated by the electronic components. The housing may have a housing wall that is separated from the heat sink structure by an air gap. The housing wall may have integral support structures. Each of the support structures may have an inwardly protruding portion that protrudes through a corresponding opening in the heat sink structure. The protruding portions may each have a longitudinal axis and a cylindrical cavity that lies along the longitudinal axis. Each of the support structures may have fins that extend radially outward from the longitudinal axis.

Abstract: A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

Abstract: A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

Abstract: An electronic device may have a housing in which electronic components are mounted. The electronic components may be mounted to a substrate such as a printed circuit board. A heat sink structure may dissipate heat generated by the electronic components. The housing may have a housing wall that is separated from the heat sink structure by an air gap. The housing wall may have integral support structures. Each of the support structures may have an inwardly protruding portion that protrudes through a corresponding opening in the heat sink structure. The protruding portions may each have a longitudinal axis and a cylindrical cavity that lies along the longitudinal axis. Each of the support structures may have fins that extend radially outward from the longitudinal axis.

Abstract: An electronic device may have a housing in which electronic components are mounted. The electronic components may be mounted to a substrate such as a printed circuit board. A heat sink structure may dissipate heat generated by the electronic components. The housing may have a housing wall that is separated from the heat sink structure by an air gap. The housing wall may have integral support structures. Each of the support structures may have an inwardly protruding portion that protrudes through a corresponding opening in the heat sink structure. The protruding portions may each have a longitudinal axis and a cylindrical cavity that lies along the longitudinal axis. Each of the support structures may have fins that extend radially outward from the longitudinal axis.

Abstract: A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

Abstract: A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

Abstract: An electronic device may have a housing in which electronic components are mounted. The electronic components may be mounted to a substrate such as a printed circuit board. A heat sink structure may dissipate heat generated by the electronic components. The housing may have a housing wall that is separated from the heat sink structure by an air gap. The housing wall may have integral support structures. Each of the support structures may have an inwardly protruding portion that protrudes through a corresponding opening in the heat sink structure. The protruding portions may each have a longitudinal axis and a cylindrical cavity that lies along the longitudinal axis. Each of the support structures may have fins that extend radially outward from the longitudinal axis.

Abstract: An electronic device may have electronic device housing structures in which electronic components such as integrated circuits and connectors may be mounted. The electronic device housing structures may include an upper housing having a planar upper surface member and four perpendicular housing sidewall structures. The housing sidewall structures of the upper housing may have edges that form a rectangular opening with curved corners. A lower housing may have structures forming a rectangular lip that is configured to be received within the rectangular opening in the upper housing. Engagement structures such as inwardly protruding hook structures on the upper housing and snap structures on the rectangular lip may be used in attaching the upper and lower housings. The snap structures may each have a rectangular main opening and lateral extension portions that extend the width of the main opening along the edge of the lip.

Abstract: A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

Abstract: A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

Abstract: A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

Abstract: A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

Abstract: A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.