Abstract: A branched polyorganosiloxane having, on average, at least two radical-curable groups per molecule and a curable silicone composition that comprises (I) the branched polyorganosiloxane and (II) a radical initiator. Cured products prepared therefrom. Devices containing the branched polyorganosiloxane, composition, or cured product. Methods of making the branched polyorganosiloxane and composition and methods of using and uses of the materials and devices.

Abstract: An optical element comprises an antireflective layer that is disposed on and in contact with a substrate. The antireflective layer has a refractive index of greater than 1 to less than 1.41 and has a pore size ranging from greater than 0 to less than 300 nm. The antireflective layer includes an outermost surface having a water contact angle ranging from greater than or equal to 70° to less than or equal to 120° as determined using ASTM 5946-04.

Abstract: A branched polyorganosiloxane having, on average, at least two radical-curable groups per molecule and a curable silicone composition that comprises (I) the branched polyorganosiloxane and (II) a radical initiator. Cured products prepared therefrom. Devices containing the branched polyorganosiloxane, composition, or cured product. Methods of making the branched polyorganosiloxane and composition and methods of using and uses of the materials and devices.

Abstract: An optical element comprises an antireflective layer that is disposed on and in contact with a substrate. The antireflective layer has a refractive index of greater than 1 to less than 1.41 and has a pore size ranging from greater than 0 to less than 300 nm. The antireflective layer includes an outermost surface having a water contact angle ranging from greater than or equal to 70° to less than or equal to 120° as determined using ASTM 5946-04.

Abstract: Non-aqueous emulsions comprise a continuous organic phase comprising an organic vehicle. The non-aqueous emulsions further comprise a discontinuous phase comprising a polyfluoropolyether silane. Methods of preparing surface treated articles therewith are also disclosed.

Abstract: A composition comprises a perfluorinated solvent having at least one CF3 group selected from a perfluoropolyether solvent having a boiling point temperature of at least 120° C. at atmospheric pressure and a nitrogen-containing perfluorinated solvent. The composition further comprises a polyfluoropolyether silane. The composition forms layers having excellent physical properties, including durability and appearance, in addition to stain and smudge resistance.

Abstract: A composition for surface treatment comprises a polyfluoropolyether silane, a solvent, and an additive compound for improving appearance and durability of layers formed from the composition. The layers formed from the surface treatment composition have excellent physical properties, including smudge and stain resistance, as well as durability.

Abstract: Non-aqueous emulsions comprise a continuous organic phase comprising an organic vehicle. The non-aqueous emulsions further comprise a discontinuous phase comprising a polyfluoropolyether silane. Methods of preparing surface treated articles therewith are also disclosed.

Abstract: A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, an aqueous base stripper or a reactive ion etch recipe containing CF4 is used to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).

Abstract: A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, a reactive ion etch recipe containing CF4 to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the organic based photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the organic photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).

Abstract: A silsesquioxane resin comprised of the units (Ph(CH2)rSiO(3-x)/2(OR?)x)m, (HSiO(3-x)/2(OR?)x)n?(MeSiO(3-x)/2(OR?)x)o?(RSiO(3-x)/2(OR?)x)p, (R1SiO(3-x)/2(OR?)x)q where Ph is a phenyl group, Me is a methyl group; R? is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from an aryl sulfonate ester group; and R1 is selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0.95; n has a value of 0.05 to 0.95; o has a value of 0.05 to 0.95; p has a value of 0.05 to 0.5; q has a value of 0 to 0.5; and m+n+o+p+q=1.

Abstract: A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, a reactive ion etch recipe containing CF4 to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the organic based photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the organic photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).

Abstract: A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, an aqueous base stripper or a reactive ion etch recipe containing CF4 is used to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).

Abstract: A silsesquioxane resin comprised of the units (Ph(CH2)rSiO(3-x)/2(OR?)x)m, (HSiO(3-x)/2(OR?)x)n?(MeSiO(3-x)/2(OR?)x)o?(RSiO(3-x)/2(OR?)x)p, (R1SiO(3-x)/2(OR?)x)q where Ph is a phenyl group, Me is a methyl group; R? is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from an aryl sulfonate ester group; and R1 is selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0,95; n has a value of 0.05 to 0.95; o has a value of 0.05 to 0.95; p has a value of 0.05 to 0.5; q has a value of 0 to 0.5; and m+n+o+p+q=1.