Patents by Inventor Michael L. Huber

Michael L. Huber has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Annealed poly-silicide etch process
    Patent number: 5654219
    Abstract: A method for forming poly-silicide conductors (CG,GAP) on a semiconductor device (10) includes forming a layer (14) of doped polysilicon over a region of the device (10), then depositing a layer (15) of refractory metal on the layer (14) of doped polysilicon. The layer (14) of doped polysilicon and the layer (15) of refractory metal are then annealed to form a poly-silicide layer (PSL). The poly-silicide layer (PSL) is then etched to form the poly-silicide conductors (CG,GAP).
    Type: Grant
    Filed: February 7, 1996
    Date of Patent: August 5, 1997
    Assignee: Texas Instruments Incorporated
    Inventor: Michael L. Huber