Abstract: A metal structure (600) for a bonding pad on integrated circuit wafers, which have interconnecting metallization (101) protected by an insulating layer (102) and selectively exposed by windows in the insulating layer. The structure comprises a patterned seed metal layer (104) positioned on the interconnecting metallization exposed by the window so that the seed metal establishes ohmic contact to the metallization as well as a practically impenetrable seal of the interface between the seed metal and the insulating layer. Further, a metal stud (301) is formed on the seed metal and aligned with the window. The metal stud is conformally covered by a barrier metal layer (501) and an outermost bondable metal layer (502).

Abstract: A metal structure (600) for a bonding pad on integrated circuit wafers, which have interconnecting metallization (101) protected by an insulating layer (102) and selectively exposed by windows in the insulating layer. The structure comprises a patterned seed metal layer (104) positioned on the interconnecting metallization exposed by the window so that the seed metal establishes ohmic contact to the metallization as well as a practically impenetrable seal of the interface between the seed metal and the insulating layer. Further, a metal stud (301) is formed on the seed metal and aligned with the window. The metal stud is conformally covered by a barrier metal layer (501) and an outermost bondable metal layer (502).

Abstract: According to one embodiment of the present invention, a method for electroplating electronic devices is disclosed which includes placing the outer surface of a substrate in contact with a solution comprising a conductive material. An electrical current is passed through the solution and the substrate so as to cause the conductive material to deposit on the substrate under the electromotive force caused by the electrical current. The level of the electrical current is varied from a first current level to a second current level to provide for differing rates of deposition of the conductive material on the substrate. The second current level provides a relaxation period to allow the conductive material deposited on the substrate to come to equilibrium.