Abstract: The present invention provides a method for using ion filtering to adjust the number of ions delivered to a substrate. The method comprising a process chamber being provided that is operatively connected to a plasma source. The substrate is provided on a substrate support that is provided within the process chamber. An electrical bias source is provided that is operatively connected to an aperture plate that is provided in the process chamber. The substrate on the substrate support is processed using a plasma generated using the plasma source. A variable bias voltage from the electrical bias source is applied to the aperture plate during the plasma processing of the substrate. The plasma processing of the substrate can further comprise exposing the substrate to a plasma time division multiplex process which alternates between deposition and etching on the substrate.

Abstract: In emergency or search-and-rescue operations, user devices such as phones may transmit signals that indicate people may be located nearby. The signals can be detected by one or more rover devices, which can explore dangerous terrain for indications of people to be rescued. The user devices can activate an application that conserves battery power while emitting a signal, in some cases in a round robin configuration to further conserve power. The rover devices, or other devices that make contact with the user devices, can collect and manipulate data about the user devices to aid a rescue operation.

Abstract: The present invention provides an improved plasma source configuration comprising a vacuum chamber having the source. A dielectric member is in communication with the vacuum chamber and surrounded by the plasma source. A high aspect ratio gap is formed between a film breaker and the dielectric member.

Abstract: The present invention provides a method for dicing a substrate on a composite film. A work piece having a support film, a frame and a substrate is provided. The substrate has a top surface and a bottom surface. The top surface of the substrate has at least one die region and at least one street region. The composite film is interposed between the substrate and the support film. Substrate material is etched from the at least one street region to expose a portion of the composite film using a substrate etch process. A first component of the composite film is etched using a first etch process. A second component of the exposed portion of the composite film is plasma etched using a second etch process.

Abstract: The present invention provides a method for using ion filtering to adjust the number of ions delivered to a substrate. The method comprising a process chamber being provided that is operatively connected to a plasma source. The substrate is provided on a substrate support that is provided within the process chamber. An electrical bias source is provided that is operatively connected to an aperture plate that is provided in the process chamber. The substrate on the substrate support is processed using a plasma generated using the plasma source. A variable bias voltage from the electrical bias source is applied to the aperture plate during the plasma processing of the substrate. The plasma processing of the substrate can further comprise exposing the substrate to a plasma time division multiplex process which alternates between deposition and etching on the substrate.

Abstract: The present invention provides a method for dicing a substrate on a composite film. A work piece having a support film, a frame and a substrate is provided. The substrate has a top surface and a bottom surface. The top surface of the substrate has at least one die region and at least one street region. The composite film is interposed between the substrate and the support film. Substrate material is etched from the at least one street region to expose a portion of the composite film using a substrate etch process. A first component of the composite film is etched using a first etch process. A second component of the exposed portion of the composite film is plasma etched using a second etch process.

Abstract: The present invention provides a method for dicing a substrate on a composite film. The method comprising the provision of a work piece having a support film, a frame and a substrate. The substrate has a top surface and a bottom surface. The top surface of the substrate has at least one die region and at least one street region. The composite film is adhered to the substrate and to the support film. Substrate material is removed from the at least one street region to expose a portion of the composite film. The exposed composite film is removed from the at least one street region. A first component of the exposed portion of the composite film is plasma etched. A second component of the composite film is removed by applying a force to the composite film.

Abstract: An apparatus can include a component, a compression member, and a fastener system. The fastener system can include a first fastening member extending through the compression member and into the component and a second fastening member within the component and coupled to the first fastening member. The apparatus can include a pliable moisture barrier that separates an inner region from an outer region. The component and the second fastening member can be within the inner region, and the first fastening member can be within the inner region and within the outer region.

Abstract: The present invention provides a method for using ion filtering to adjust the number of ions delivered to a substrate. The method comprising a process chamber being provided that is operatively connected to a plasma source. The substrate is provided on a substrate support that is provided within the process chamber. An electrical bias source is provided that is operatively connected to an aperture plate that is provided in the process chamber. The substrate on the substrate support is processed using a plasma generated using the plasma source. A variable bias voltage from the electrical bias source is applied to the aperture plate during the plasma processing of the substrate. The plasma processing of the substrate can further comprise exposing the substrate to a plasma time division multiplex process which alternates between deposition and etching on the substrate.

Abstract: An electrical passthrough can include a polymer seal and an electrical conductor passing through the seal. The conductor can follow an indirect pathway through the seal. The entry point of the conductor can have a displacement within the seal that is at least 50% of the width of the seal.

Abstract: A system and method effective to trigger precisely timed actions on computing devices. The system may include a transmitting device and a receiving device. The transmitter may modulate binary data into sound waves, and the receiver may demodulate the audio signal into binary data. Signal amplitude across a range of frequencies may be used to demodulate. The received data may be interpreted in order to trigger actions on the computing device. These actions may involve the device's screen, speaker, built-in lights, camera, or vibration function. The actions may change over time based on the time at which the signal was received. More actions may be loaded from the device's storage.

Abstract: Methods are disclosed for depositing material onto and/or etching material from a substrate in a surface processing tool having a processing chamber, a controller and one or more devices for adjusting the process parameters within the chamber. The method comprises: the controller instructing the one or more devices according to a series of control steps, each control step specifying a defined set of process parameters that the one or more devices are instructed to implement, wherein at least one of the control steps comprises the controller instructing the one or more devices to implement a defined set of constant process parameters for the duration of the step, including at least a chamber pressure and gas flow rate through the chamber, which duration is less than the corresponding gas residence time (Tgr) of the processing chamber for the step.

Abstract: A system and method effective to trigger precisely timed actions on computing devices. The system may include a transmitting device and a receiving device. The transmitter may modulate binary data into sound waves, and the receiver may demodulate the audio signal into binary data. Signal amplitude across a range of frequencies may be used to demodulate. The received data may be interpreted in order to trigger actions on the computing device. These actions may involve the device's screen, speaker, built-in lights, camera, or vibration function. The actions may change over time based on the time at which the signal was received. More actions may be loaded from the device's storage.

Abstract: Methods are disclosed for depositing material onto and/or etching material from a substrate in a surface processing tool having a processing chamber, a controller and one or more devices for adjusting the process parameters within the chamber. The method comprises: the controller instructing the one or more devices according to a series of control steps, each control step specifying a defined set of process parameters that the one or more devices are instructed to implement, wherein at least one of the control steps comprises the controller instructing the one or more devices to implement a defined set of constant process parameters for the duration of the step, including at least a chamber pressure and gas flow rate through the chamber, which duration is less than the corresponding gas residence time (Tgr) of the processing chamber for the step.

Abstract: This device is designed to separate liquid from matter, or water from ground up cement or concrete. Water is recycled from the bi-product heavy grey mud or slurry, drying up the left-over matter. This process is possible through absorption containment liquid gravity filtration, This makes the water follow toward the adsorption gravite route of exite, or drip drying. The slurry liquid or matter is suspended in an absorbent filtration by using gravity to push the water out. The filter is designed in such a way that the water drips into the desired place.

Abstract: A slotted conducting cylinder (11) surrounds a reactor chamber body (10) and is in turn surrounded by an antenna (12). The cylinder (11) can be grounded during normal operation of plasma processing apparatus, but when RF driven it serves to enhance capacitive coupling with the plasma causing the inner surface (16) of the body (10) to become charged and hence the plasma will sputter clean the inner surface (16).

Abstract: A plasma processing apparatus includes a chamber having a support for a substrate, and at least one gas inlet into the chamber. The apparatus is configured to alternately introduce an etch gas and a deposition gas into the chamber through the at least on gas inlet, and to strike a plasma into the etch gas and the deposition gas alternately introduced into the chamber. The apparatus is further equipped with an attenuation device for reducing and/or homogenizing the ion flux from the plasma substantially without affecting the neutral radical number density.

Abstract: A workpiece is processed in a chamber by striking a plasma in the chamber, treating the workpiece by cyclically adjusting the processing parameters between at least a first step having a first set of processing parameters and a second step having a second set of process parameters, wherein the plasma is stabilized during the transition between the first and second steps. These steps may comprise cyclic etch and deposition steps. One possibility for stabilizing the plasma is by matching the impedance of the plasma to the impedance of the power supply which provides energy to the plasma, by means of a matching unit which can be controlled in a variety of ways depending upon the step type or time during the step. Another possibility is to prevent or reduce substantially variation in the pressure in the chamber between the first and second steps.

Abstract: An analytical cell including a lightguide with a plurality of conduits filled with a migration medium. The medium, the lightguide and a surrounding medium have refractive indices selected such that light entering the lightguide is internally reflected within the lightguide to provide substantially uniform illumination of the conduits.

Abstract: A light exposure system is used to expose an alignment layer formed of anistropically absorbing molecules so as to allow alignment of subsequently applied liquid crystal polymer (LCP) molecules. The light incident on the alignment layer is polarized. When a single polarizer is used, the azimuthal polarization direction varies across the substrate carrying the alignment layer. Various approaches to reducing the azimuthal polarization variation may be adopted, including the introduction of various types of polarization rotation reduction element and in selecting an appropriate tilt angle for the light source. Furthermore, a reflective structure may be inserted between the light source and the alignment layer. Use of the reflective structure increases the total amount of light incident on the alignment layer.