Abstract: An apparatus and method for monitoring the conductivity of a semiconductor wafer during the course of a polishing process. A polishing pad that contacts the wafer has an active electrode and at least one passive electrode, both of which are embedded in the polishing pad. A detecting device is connected to the active and passive electrodes for monitoring the current between the electrodes as the wafer is lapped by the polishing pad. The etch endpoint of the wafer is determined as a function of the magnitude of the current flow.

Abstract: A coaxial wiring structure that is constructed by depositing and etching a series of conductor layers and insulator layers.

Abstract: A method of cryogenically hardening and expanding an insert in an article is disclosed. Particularly, gray iron piston ring insert (14) having an austenitic matrix is treated in a piston body (12) by impinging a cryogenic medium thereon. This changes the matrix microstructure of the insert to at least about 25 Vol. % martensite and desirably increases the hardness level thereof to at least about 95 on the Rockwell "B" scale in the desired regions thereof. The volume of the insert is also expanded to be more securely received in the piston body.