Abstract: Layered structures described herein include electronic devices with 2-dimensional electron gas between polar-oriented cubic rare-earth oxide layers on a non-polar semiconductor. Layered structure includes a semiconductor device, comprising a III-N layer or rare-earth layer, a polar rare-earth oxide layer grown over the III-N layer or rare-earth layer, a gate terminal deposited or grown over the polar rare-earth oxide layer, a source terminal that is deposited or epitaxially grown over the layer, and a drain terminal that is deposited or grown over the layer.

Abstract: A slot modulator coupled to a coplanar transmission line, the slot modulator includes a pair of spaced apart rails forming a waveguide slot therebetween and opposed slabs coupling the rails to the coplanar transmission line, the rails are at least partially formed of highly doped silicon and the slabs are formed at least partially of highly doped silicon.

Abstract: A polymer modulator including a waveguide core defined over an insulating layer and having a first passive region including a light input, a second passive region including a light output, and an active region optically coupling the passive regions into a continuous waveguide core between the input and output. The waveguide core in the first and second passive regions including one of sol-gel and SiO2 surrounded by cladding including one of sol-gel and SiO2. The cladding in the passive regions having a first refractive index, the waveguide core in both regions having a second refractive index at least 0.01 higher than the first refractive index. The waveguide core in the active region including sol-gel, a cladding layer of sol-gel positioned between the insulating layer and the waveguide core, the refractive index of the waveguide core is at least 0.01 higher than the refractive index of the cladding layer.

Abstract: An EO polymer modulator with conformal atomic layer deposition sealant layers including an active region of a device material stack with an elongated tapered active section positioned on a passive waveguide core. The device material stack supported on a substrate with the passive waveguide core defining light input and light output side surfaces. A conformal atomic layer deposition sealant layer overlying the device material stack including the light input and light output side surfaces, the conformal atomic layer deposition sealant layer defining windows for the light input and light output side surfaces.

Abstract: Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer. Specifically, the substrate may include a porous portion, which is usually aligned with the metal layer, with or without a rare earth oxide layer in between.

Abstract: An EO polymer modulator including a substrate with a cladding layer formed on a surface and a passive waveguide core, having a cross-sectional area, formed in the cladding layer and including an elongated tapered active section. An elongated trench in the cladding layer, the elongated tapered active section of the waveguide core positioned in the elongated trench, electrodes positioned on a surface of the cladding layer on opposite sides of the elongated trench, and an elongated strip of EO polymer overlying the elongated tapered active section of the waveguide core. The elongated strip of EO polymer positioned between and parallel with the electrodes and coplanar with the electrodes.

Abstract: A thin film polymer device including a waveguide core surrounded by dielectric material positioned on a platform. The core has a passive input portion and a passive output portion joined by a necked down active portion. A layer of EO polymer material positioned on the dielectric material overlying the active portion of the core and the core, the EO polymer, and the dielectric material all having refractive indices with the refractive index of the EO polymer being higher than the refractive index of the dielectric material. Light progressing through the core from the passive input portion to the passive output portion transitions to the layer of EO polymer material as it enters the necked down active portion and transitions back to the core as it leaves the necked down active portion.

Abstract: An EO polymer modulator with conformal atomic layer deposition sealant layers including an active region of a device material stack with an elongated tapered active section positioned on a passive waveguide core. The device material stack supported on a substrate with the passive waveguide core defining light input and light output side surfaces. A conformal atomic layer deposition sealant layer overlying the device material stack including the light input and light output side surfaces, the conformal atomic layer deposition sealant layer defining windows for the light input and light output side surfaces.

Abstract: An EO polymer modulator including a substrate with a cladding layer formed on a surface and a passive waveguide core, having a cross-sectional area, formed in the cladding layer and including an elongated tapered active section. An elongated trench in the cladding layer, the elongated tapered active section of the waveguide core positioned in the elongated trench, electrodes positioned on a surface of the cladding layer on opposite sides of the elongated trench, and an elongated strip of EO polymer overlying the elongated tapered active section of the waveguide core. The elongated strip of EO polymer positioned between and parallel with the electrodes and coplanar with the electrodes.

Abstract: A thin film polymer device including a waveguide core surrounded by dielectric material positioned on a platform. The core has a passive input portion and a passive output portion joined by a necked down active portion. A layer of EO polymer material positioned on the dielectric material overlying the active portion of the core and the core, the EO polymer, and the dielectric material all having refractive indices with the refractive index of the EO polymer being higher than the refractive index of the dielectric material. Light progressing through the core from the passive input portion to the passive output portion transitions to the layer of EO polymer material as it enters the necked down active portion and transitions back to the core as it leaves the necked down active portion.

Abstract: A monolithic PIC including a monolithic laser formed in/on a platform and a polymer modulator monolithically built onto the platform and optically coupled to the laser. The modulator includes a first cladding layer, a passive core region with a surface abutting a surface of the first cladding layer, the core region extending to define an input and an output for the modulator. A shaped electro-optic polymer active component has a surface abutting a surface of a central portion of the core region. The active component is polled to align dipoles and promote modulation of light and has a length that extends only within a modulation area defined by modulation electrodes. A second cladding layer encloses the active component and is designed to produce adiabatic transition of light waves traveling in the core region into the active component to travel the length thereof and return to the core region.

Abstract: Embodiments described herein provide a layered structure that comprises a substrate that includes a first porous multilayer of a first porosity, an active quantum well capping layer epitaxially grown over the first porous multilayer, and a second porous multilayer of the first porosity over the active quantum well capping layer, where the second porous multilayer aligns with the first porous multilayer.

Abstract: A guide transition device including a light source designed to generate a light beam, a light input port on a first plane and coupled to receive the light beam from the light source, a light output port on a second plane different than the first plane, the light output port designed to couple a received light beam to output equipment and plane shifting apparatus coupled to receive the light beam from the light input port on the first plane and to shift or transfer the light beam to the second plane. The plane shifting apparatus is coupled to transfer the light beam to the light output port on the second plane.

Abstract: In view of the high-temperature issues in III-N layer growth process, embodiments described herein use layered structure including a rare earth oxide (REO) or rare earth nitride (REN) buffer layer and a polymorphic III-N-RE transition layer to transit from a REO layer to a III-N layer. In some embodiments, the piezoelectric coefficient of III-N layer is increased by introduction of additional strain in the layered structure. The polymorphism of RE-III-N nitrides can then be used for lattice matching with the III-N layer.

Abstract: A direct-drive region-less polymer modulator includes a waveguide having a first cladding layer, a passive core with a surface abutting the first cladding layer, the passive core extending to an optical input and an optical output. A shaped electro-optic polymer active component with a surface abutting the passive core region, the shaped component being polled to align dipoles and promote modulation of light and having a length that extends only within a modulation area defined by modulation electrodes. A second cladding layer enclosing the shaped component and designed to produce adiabatic transition of light waves traveling in the passive core region into the shaped component to travel the length of the shaped component and return to the passive core region. A portion of the multilayer waveguide defining the polymer modulator as a direct-drive polymer modulator.

Abstract: A polymer modulator includes a first cladding layer, a passive core region with a surface abutting a surface of the first cladding layer, the passive core region extending to define an optical input and an optical output for the modulator, a shaped electro-optic polymer active component with a surface abutting a surface of a central portion of the passive core region, the shaped electro-optic polymer active component being polled to align dipoles and promote modulation of light, the shaped electro-optic polymer active component having a length that extends only within a modulation area defined by modulation electrodes, and a second cladding layer enclosing the shaped electro-optic polymer active component and designed to produce adiabatic transition of light waves traveling in the passive core region into the shaped electro-optic polymer active component to travel the length of the shaped electro-optic polymer active component and return to the passive core region.

Abstract: A polymer modulator including a waveguide core defined over an insulating layer and having a first passive region including a light input, a second passive region including a light output, and an active region optically coupling the passive regions into a continuous waveguide core between the input and output. The waveguide core in the first and second passive regions including one of sol-gel and SiO2 surrounded by cladding including one of sol-gel and SiO2. The cladding in the passive regions having a first refractive index, the waveguide core in both regions having a second refractive index at least 0.01 higher than the first refractive index. The waveguide core in the active region including sol-gel, a cladding layer of sol-gel positioned between the insulating layer and the waveguide core, the refractive index of the waveguide core is at least 0.01 higher than the refractive index of the cladding layer.

Abstract: A polymer waveguide/modulator including a lower cladding layer, a polymer core, an upper cladding layer, a first protection/barrier layer sandwiched between the lower cladding layer and the core, and a second protection/barrier layer sandwiched between the core and the upper cladding layer. The protection/barrier layers designed to protect the cladding layers and the core from solvents and gases and to prevent current leakage between the cladding layers and the core. The first protection/barrier layer is optically transparent and designed with a refractive index less than, greater than, or the same as the refractive index of the core and approximately equal to the refractive index of the lower cladding layer. The second protection/barrier layer is optically transparent and designed with a refractive index less than, greater than, or the same as the refractive index of the core and approximately equal to the refractive index of the upper cladding layer.

Abstract: Layered structures described herein include electronic devices with 2-dimensional electron gas between polar-oriented cubic rare-earth oxide layers on a non-polar semiconductor. Layered structure includes a semiconductor device, comprising a III-N layer or rare-earth layer, a polar rare-earth oxide layer grown over the III-N layer or rare-earth layer, a gate terminal deposited or grown over the polar rare-earth oxide layer, a source terminal that is deposited or epitaxially grown over the layer, and a drain terminal that is deposited or grown over the layer.

Abstract: A hermetic capsule including a semiconductor/metal base with sensitive semiconductor/polymer electrical and optical components formed thereon and a semiconductor/metal lid. The semiconductor/metal lid sealed to the semiconductor/metal base by metallization so as to form a chamber including all of the sensitive semiconductor/polymer electrical and optical components and hermetically sealing the chamber and all sensitive components from the ambient. External access to the sensitive semiconductor/polymer electrical and optical components is provided through a metallization.