Abstract: A device for producing plasma in a vacuum chamber (13) with the help of electromagnetic alternating fields, in which a rod-shaped conductor (3) that is inside a pipe (2) and is made of an insulating material and is guided into the vacuum chamber (13). The inner diameter of the insulating pipe (2) is larger than the diameter of the conductor (3). The insulating pipe (2) is held in the wall (1) of the vacuum chamber (13) at one end, and its outer surface is sealed across from the vacuum chamber wall. The conductor (3) is connected to a source (9) for producing the electromagnetic alternating field. A pipe-shaped conductor (4) extends coaxially to the rod-shaped conductor (3) in the annulus formed by the rod-shaped conductor (3) and the insulating pipe (2), whereby the radial inner ring slot (14) formed between the rod-shaped conductor (3) and the pipe-shaped conductor (4) corresponds to the waveguide (10) of the source (9).

Abstract: In a device for generating plasma in a vacuum chamber (9) with the aid of alternating electromagnetic fields, at least one rod-shaped conductor (7) is guided inside of a tube (16) made of insulating material through the vacuum chamber (9), the insulating tube (16) is held at its ends in one or in the opposing walls (6;17,17a) of the vacuum chamber (9) and is sealed off, wherein one or both ends of the rod-shaped conductor (7) are connected to a generator (18,19), wherein one or both ends of the rod-shaped conductor (7) are surrounded by outer conductors (20,21), each extending from the generator (18,19) to the respective inside wall surface (22,22a) of the vacuum chamber (9), wherein, in the area of the wall passages, the rod-shaped conductor (7) connected to the sources (18,19) and the outer conductors (20,21) surrounding it are each provided with a branch constituting a bypass (23,24), wherein a second rod-shaped conductor (26) extending into or through the vacuum chamber (9) surrounded by a second insulati

Abstract: For the application of a scratch protection layer on plastic substrates, a plasma is produced by the plasma CVD method, away from the individual plastic substrate, in an excitation gas, and this excitation gas is supplied through a tube to the plastic substrate. Subsequently, an antireflection layer is applied by means of a gas flow sputter source. The apparatus provided for this has a plasma CVD chamber (1) and a gas flow sputter chamber (2), next to one another. The plastic substrates (7,8) to be coated are transported from the plasma CVD chamber (2) to the gas flow sputter chamber (1) with the aid of a transporting device (3), designed as a turning plate.

Abstract: A method of forming interconnects on an electronic device that can be bonded to another electronic device at a low processing temperature can be carried out by depositing a first interconnect material on the electronic device forming protrusions and then depositing a second interconnect material to at least partially cover the protrusions, wherein the second interconnect material has a lower flow temperature than the first interconnect material. The method is carried out by flowing a molten solder into a mold having microcavities to fill the cavities and then allowed to solidify. The mold is then aligned with a silicon wafer containing chips deposited with high melting temperatures solder bumps such that each microcavity of the mold is aligned with each high melting temperature solder bump on the chip.

Abstract: A sputtering cathode based on the magnetron principle, with a target of the material to be sputtered having a minimum of one component, with a magnetic system located beneath the target and having magnetic sources of different polarization which form a minimum of one self-enclosed tunnel of arcuate magnetic lines of force, having the poles of the sources facing away from the target connected to each other via a magnetic yoke made of a material of low retentivity, the bodies forming the sources of the magnetic fields being right prisms, and preferably right parallelepipeds, the base edges of which run parallel to the target plane, with the magnetic lines of force of the sources running at inclined angles relative to the base surfaces of the bodies.

Abstract: In an apparatus for the deposition of polycrystalline diamond on large, flat substrates (3) by the plasma method, with a vacuum chamber (4); with locks for the inward and outward transfer of the substrates; with a device installed in the chamber (4) for conveying the substrates (3) through at least one, preferably through two treatment stations; with hot-filament sources (5, 5', . . . ) forming a first group, installed above the plane of the substrates; with microwave plasma sources (8, 8', . . . ) forming a second group; with an electrode (11) fed with radio frequency underneath the plane of the substrates for generating a bias voltage; and with gas feed pipes (6, 9) opening into the vacuum chamber (4), the hot-filament arrangements (5, 5', . . . ), designed as linear sources, are arranged transversely to the substrate transport direction (a) and form a first coating zone (Z.sup.1), where the microwave plasma sources (8, 8', . . .

Abstract: An interconnect system that has low alpha particle emission characteristics for use in an electronic device includes a semiconductor chip that has an upper surface and spaced apart electrically resistive bumps positioned on conductive regions of the upper surface, the electrically resistive bumps are made of a composite material of a polymer and metal particles, and a substrate that has conductive regions bonded to the electrically resistive bumps in a bonding process wherein the electrically resistive bumps convert to electrically conductive bumps after the bonding process.

Abstract: An improved motive structure for transporting workpieces (wafers, chip, packages, etc.) between processing stations or tools in a manufacturing operation. The structure includes a first circular crankshaft assembly connected to center axles disposed at right angles to the transport motion. A second such crankshaft assembly is located some distance along the path of motion. Three driverods are connected between the first and second crankshaft assemblies, each affixed 120.degree. apart on the circular crankshafts so that each driverod is moved upward, then forward along the transport direction, then downward and backward to its original position as the crankshafts go through a complete 360.degree. rotation. The structure is disposed beneath transport rails which hold movable containers for holding the workpieces. As a driverod moves up and forward, it contacts a spring-loaded element on the movable container and drives it forward by friction contact.