Abstract: The present invention provides soluble, stable singlet fission (SF) compounds, compositions, materials, methods of their use, and methods for their preparation that provide efficient intramolecular singlet fission (iSF) and multiple excitons. The SF compound may be a dimer, an oligomer, or a polymer of polyoligoacenes, where for example, the compound achieves a triplet yield reaching about 200% per absorbed photon. In this system, SF does not depend on intermolecular inter-actions. Instead, SF is an intrinsic property of the molecule and therefore occurs independent of intermolecular interactions. Singlet fission has the potential to significantly improve the photocurrent in single junction solar cells and thus raise the Shockley-Queisser power conversion efficiency limit from about 33% to about 46% or greater. Quantitative SF yield at room temperature has only been observed in crystalline solids or aggregates of higher acenes.

Abstract: The present invention provides soluble, stable singlet fission (SF) compounds, compositions, materials, methods of their use, and methods for their preparation that provide efficient intramolecular singlet fission (iSF) and multiple excitons. The SF compound may be a dimer, an oligomer, or a polymer of polyoligoacenes, where for example, the compound achieves a triplet yield reaching about 200% per absorbed photon. In this system, SF does not depend on intermolecular inter-actions. Instead, SF is an intrinsic property of the molecule and therefore occurs independent of intermolecular interactions. Singlet fission has the potential to significantly improve the photocurrent in single junction solar cells and thus raise the Shockley-Queisser power conversion efficiency limit from about 33% to about 46% or greater. Quantitative SF yield at room temperature has only been observed in crystalline solids or aggregates of higher acenes.

Abstract: A solid-state material comprising a solid-state compound is provided. The solid-state compound has the formula: [Cluster1][Cluster2]n, where Cluster1 can be a metal chalcogenide molecular cluster, Cluster2 a carbon cluster, and n the number of Cluster2 clusters in the solid-state compound. A method of forming a solid-state material is also provided.

Abstract: A solid-state material comprising a solid-state compound is provided. The solid-state compound has the formula: [Cluster1][Cluster2]n, where Cluster1 can be a metal chalcogenide molecular cluster, Cluster2 a carbon cluster, and n the number of Cluster2 clusters in the solid-state compound. A method of forming a solid-state material is also provided.

Abstract: An integrated circuit includes a substrate, and at least one copper interconnection layer adjacent the substrate. The interconnection layer further comprises copper lines, each comprising at least an upper surface portion including at least one copper fluoride compound. The copper fluoride compound preferably comprises at least one of cuprous fluoride and cupric fluoride. The compounds of copper and fluoride are relatively stable and provide a reliable and long term passivation for the underlying copper. In accordance with one particularly advantageous embodiment of the invention, the dielectric layer may comprise a fluorosilicate glass (FSG) layer. Accordingly, during formation of the FSG layer, the upper surface of the copper reacts with the fluorine to form the copper fluoride compound which then acts as the passivation layer for the underlying copper. In other embodiments, the dielectric layer may comprise an oxide or air, for example.

Abstract: A structure, e.g., a photonic band gap material, exhibiting substantial periodicity on a micron scale is provided. Fabrication involves the steps of providing a template comprising a colloidal crystal, placing the template in an electrolytic solution, electrochemically forming a lattice material, e.g., a high refractive index material, on the colloidal crystal, and then removing the colloidal crystal particles to form the desired structure. The electrodeposition provides a dense, uniform lattice, because formation of the lattice material begins near a conductive substrate, for example, and growth occurs substantially along a plane moving in a single direction, e.g., normal to the conductive substrate. Moreover, because the electrochemically grown lattice is a three-dimensionally interconnected solid, there is very little shrinkage upon subsequent treatment.

Abstract: A method for forming a dielectric film having a desired composition comprising sputtering a dielectric material onto a substrate to produce an intermediary film, the intermediary film incorporating one or more elements in addition to those elements included in the desired composition of the dielectric film; and removing the one or more additional elements from the intermediary film to produce the dielectric film having the desired composition.

Abstract: Optical modulators and switches for use in telecommunications systems are disclosed having solid-state crystalline optical material comprised of III-V, II-VI, and IV semiconductor nanocrystals embedded in a polymer matrix. In a preferred embodiment, the crystalline material comprises CdSe crystals sized at less than 5.8 nm in diameter and more preferably at less than about 4 nm in diameter and advantageously embedded in poly(vinyl pyridine). The crystalline material sandwiched between two electrodes defines an optical modulator. In one preferred embodiment, the crystalline material with ten-percent crystal embedded in a polymer will exhibit with an applied voltage of 100V, a differential absorbance spectra (.DELTA.A) of about 50 cm.sup.-1 at wavelengths of about 610 nm and a differential refractive index (.DELTA.n) of about 10.sup.-4 at wavelengths of about 625 nm.

Abstract: Coating phosphor (typically particles) with a thin layer of Si, Ti, Al, Zr, In or Sn-containing material can result in significantly improved lifetime of the phosphor. A preferred coating technique involves exposing the phosphor to an alkoxide (e.g., TEOS) solution having ph>7, preferably >9 or 10.