Abstract: A device and a method for its fabrication. The device may include a first surface, a second surface to receive light into the device, a first photovoltaic cell between the first surface and the second surface, and a second photovoltaic cell between the first surface and the second surface. The first photovoltaic cell includes a first region of a first photovoltaic material exhibiting an excess of a first type of charge carrier and a second region of the first photovoltaic material exhibiting an excess of a second type of charge carrier, and the second photovoltaic cell includes a first region of a second photovoltaic material exhibiting an excess of the first type of charge carrier and a second region of the second photovoltaic material exhibiting an excess of the second type of charge carrier.

Abstract: A device and a method for its fabrication. The device may include a first at least partially transparent surface, a second at least partially transparent surface, a first photovoltaic cell between the first surface and the second surface and comprising a first photovoltaic material including a first p-n junction, a second photovoltaic cell between the first surface and the second surface and comprising a second photovoltaic material including a second p-n junction, and a third photovoltaic cell between the first surface and the second surface and comprising a third photovoltaic material including a third p-n junction a third p-n junction. A first bandgap associated with the first photovoltaic material is greater than a second bandgap associated with the second photovoltaic material, and a third bandgap associated with the third photovoltaic material is greater than the second bandgap associated with the second photovoltaic material.

Abstract: An apparatus and a method for its fabrication. The device may include a bifacial solar cell comprising a partially-transparent first surface and a partially-transparent second surface opposite the first surface, and an optical element comprising a first partially-transparent dielectric portion in contact with the first surface and the second surface. The optical element may be configured to receive light, to direct a first portion of the received light to the first surface, and to direct a second portion of the received light to the second surface.

Abstract: A device and a system to fabricate a device including a semiconductor mesa extending from a semiconductor base, the semiconductor mesa comprising an optically-active semiconductor area and a top surface, conductive material disposed on the top surface of the mesa, and substantially optically-transparent material disposed on the conductive material and on the top surface, wherein a surface of the substantially optically-transparent material above the conductive material and the top surface is substantially planar. In some aspects, the semiconductor mesa includes a side wall with one or more exposed p-n junctions, and material is disposed on the side wall to cover the one or more exposed p-n junctions.

Abstract: A photovoltaic cell may include a semiconductor base, a semiconductor mesa extending from the semiconductor base, a dielectric and a conductive material. The semiconductor mesa includes a top surface and a side wall, and a first portion of the dielectric is disposed on the top surface, a second portion of the dielectric is disposed on the side wall, and a third portion of the dielectric is disposed on the base. The conductive material is disposed on the top surface of the mesa and on the dielectric, and the conductive material covers the first portion of the dielectric, the second portion of the dielectric, and a portion of the third portion.

Abstract: A light emitting device includes a layer of first conductivity type, a layer of second conductivity type, and a light emitting layer disposed between the layer of first conductivity type and the layer of second conductivity type. A via is formed in the layer of second conductivity type, down to the layer of first conductivity type. The vias may be formed by, for example, etching, ion implantation, diffusion, or selective growth of at least one layer of second conductivity type. A first contact electrically contacts the layer of first conductivity type through the via. A second contact electrically contacts the layer of second conductivity type. A ring that surrounds the light emitting layer and is electrically connected to the first contact electrically contacts the layer of first conductivity type.

Abstract: A device includes a semiconductor light emitting device with contacts on the same side of the device and is mounted on a transparent submount having conductive vias that are electrically connected to the contacts in a flip-chip configuration. A method of producing a semiconductor light emitting device includes producing a light emitting active region disposed between a first region of first conductivity type and a second region of second conductivity type on a growth substrate. A contact region is etched through the second region, the active region, and partially through the first region. Contacts are produced on the first region, i.e., in the etched contact region, and on the second region. A transparent submount with conductive vias is provided and bonded to the assembly before the growth substrate is removed. The submount and assembly are then diced together resulting in the submount and assembly having approximately the same footprint.

Abstract: A structure includes semiconductor light emitting device and a wavelength converting layer. The wavelength converting layer converts a portion of the light emitted from the semiconductor light emitting device. The dominant wavelength of the combined light from the semiconductor light emitting device and the wavelength converting layer is essentially the same as the wavelength of light emitted from the device. The wavelength converting layer may emit light having a spectral luminous efficacy greater than the spectral luminous efficacy of the light emitted from the device. Thus, the structure has a higher luminous efficiency than a device without a wavelength converting layer.

Abstract: A mount for a semiconductor light emitting device includes an integrated reflector cup. The reflector cup includes a wall formed on the mount and shaped and positioned to reflect side light emitted from the light emitting device along a vertical axis of the device/mount combination. The wall may be covered by a reflective material such as a reflective metal.

Abstract: A light emitting device includes a layer of first conductivity type, a layer of second conductivity type, and a light emitting layer disposed between the layer of first conductivity type and the layer of second conductivity type. A via is formed in the layer of second conductivity type, down to the layer of first conductivity type. The vias may be formed by, for example, etching, ion implantation, diffusion, or selective growth of at least one layer of second conductivity type. A first contact electrically contacts the layer of first conductivity type through the via. A second contact electrically contacts the layer of second conductivity type. A ring that surrounds the light emitting layer and is electrically connected to the first contact electrically contacts the layer of first conductivity type.

Abstract: A light emitting device includes a resonant cavity formed by a reflective metal layer and a distributed Bragg reflector. Light is extracted from the resonant cavity through the distributed Bragg reflector. A light emitting region sandwiched between a layer of first conductivity type and a layer of second conductivity type is disposed in the resonant cavity. In some embodiments, first and second contacts are formed on the same side of the resonant cavity, forming a flip chip or epitaxy up device.

Abstract: A fabrication method for providing a semiconductor light-emitting device includes growing a plurality of layers on a semiconductor substrate, including forming a lower cladding layer and an active region for generating lightwaves. A laminated cladding structure is formed on the active region. The laminated cladding structure includes a lower layer that is substantially aluminum-free to inhibit oxidation and includes an upper layer that is aluminum-bearing in order to promote oxidation. The upper layer of the lamination is oxidized along selected first regions and is selectively masked to prevent oxidation for second regions. The oxidation of the first region is carried out under conditions such that a native oxide is formed throughout the thickness of the first regions. Electrical current to the active region for operating the light-emitting device is channeled via the unoxidized region of the upper layer of the lamination. In a preferred embodiment, the device is an InGaAsP-AlInAs-InP laser.