Patents by Inventor Michael M. Collver

Michael M. Collver has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Planarized magnetoresistive sensor
    Patent number: 5363265
    Abstract: A magnetoresistive sensor includes a track width oxide layer which overlies a magnetoresistive element. Etch stop layers lie on opposite sides of the magnetoresistive element adjacent a magnetoresistive element. Contact/boundary control layers overlie the etch stop layer and lie adjacent the track width oxide layer. A separate loft oxide layer overlies the contact/boundary control layers and the track width oxide layer. The magnetoresistive sensor is formed by depositing a track width oxide to a thickness of the contact/boundary control layers.
    Type: Grant
    Filed: July 19, 1993
    Date of Patent: November 8, 1994
    Assignee: Seagate Technology, Inc.
    Inventors: Wei C. Hsie, Michael M. Collver
  • Magnetoresistive sensor with electrical contacts having variable resistive regions for enhanced sensor sensitivity
    Patent number: 5260652
    Abstract: A magnetoresistive sensor having a magnetization vector M and a current density vector J which form an angle of approximately 45.degree.. Magnetic flux, which enters an active region of the magnetoresistive sensor approximately perpendicular to the magnetization vector M, propagates across the active region with substantially constant length thereby producing a rectangular shaped read sensitivity function. The current density vector J is directed with electrical contacts adjacent the active region which have high resistance regions and low resistance regions.
    Type: Grant
    Filed: March 25, 1992
    Date of Patent: November 9, 1993
    Assignee: Seagate Technology, Inc.
    Inventors: Michael M. Collver, Charles H. Tolman
  • Method of manufacturing a planarized magnetoresistive sensor
    Patent number: 5256249
    Abstract: A magnetoresistive sensor includes a track width oxide layer which overlies a magnetoresistive element. Etch stop layers lie on opposite sides of the magnetoresistive element adjacent a magnetoresistive element. Contact/boundary control layers overlie the etch stop layer and lie adjacent the track width oxide layer. A separate loft oxide layer overlies the contact/boundary control layers and the track width oxide layer. The magnetoresistive sensor is formed by depositing a track width oxide to a thickness of the contact/boundary control layers.
    Type: Grant
    Filed: September 17, 1991
    Date of Patent: October 26, 1993
    Assignee: Seagate Technology, Inc.
    Inventors: Wei C. Hsie, Michael M. Collver