Abstract: A solid-state detector for detection of neutron and alpha particles detector and methods for manufacturing and use thereof are described. The detector has an active region formed of a polycrystalline semiconductor compound comprising a particulate semiconductor material sensitive to neutron and alpha particles radiation imbedded in a binder. The particulate semiconductor material contains at least one element sensitive to neutron and alpha particles radiation, selected from a group including 10Boron, 6Lithium, 113Cadmium, 157Gadolinium and 199Mercury. The semiconductor compound is sandwiched between an electrode assembly configured to detect the neutron and alpha particles interacting with the bulk of the active region. The binder can be either an organic polymer binder or inorganic binder. The organic polymer binder comprises at least one polymer that can be selected from the group comprising polystyrene, polypropylene, Humiseal™ and Nylon-6.

Abstract: A method and horizontal furnace for vapor phase growth of HgI.sub.2 crystals which utilizes controlled axial and radial airflow to maintain the desired temperature gradients. The ampoule containing the source material is rotated while axial and radial air tubes are moved in opposite directions during crystal growth to maintain a desired distance and associated temperature gradient with respect to the growing crystal, whereby the crystal interface can advance in all directions, i.e., radial and axial according to the crystallographic structure of the crystal. Crystals grown by this method are particularly applicable for use as room-temperature nuclear radiation detectors.

Abstract: A process for purification of mercuric iodide (HgI.sub.2) to be used as a source material for the growth of detector quality crystals. The high purity HgI.sub.2 raw material is produced by a combination of three stages: synthesis of HgI.sub.2 from Hg and I.sub.2, repeated sublimation, and zone refining.

Abstract: A method and horizontal furnace for vapor phase growth of HgI.sub.2 crystals which utilizes controlled axial and radial airflow to maintain the desired temperature gradients. The ampoule containing the source material is rotated while axial and radial air tubes are moved in opposite directions during crystal growth to maintain a desired distance and associated temperature gradient with respect to the growing crystal, whereby the crystal interface can advance in all directions, i.e., radial and axial according to the crystallographic structure of the crystal. Crystals grown by this method are particularly applicable for use as room-temperature nuclear radiation detectors.