Abstract: Systems for processing articles are essential for semiconductor fabrication. In one method of controlling gas flow, a processing system is provided, the processing system having first and second fluid supplies. The first fluid supply is coupled to a first apparatus for controlling flow and the second fluid supply is coupled to the second apparatus for controlling flow. The first process fluid is then delivered to a process chamber via outlet of the first apparatus for controlling flow. The first process fluid is also bled via a bleed port of the first apparatus for controlling flow. The flow rate of the first process fluid through the bleed port is controlled at a first flow rate which is less than a first threshold.

Abstract: A gas flow control system for delivering a plurality of gas flows. The gas flow control system has a gas flow path extending from a gas inlet to first and second gas outlets. First and second flow restrictors are operably coupled to the gas flow path. First and second valves are operably coupled to the gas flow path such that when both first and second valves are in a fully open state, flows of gas from the first and second gas outlets are split according to the impedances of the first and second flow restrictors.

Abstract: A gas flow control system for delivering a plurality of gas flows. The gas flow control system has a gas flow path extending from a gas inlet to first and second gas outlets. First and second flow restrictors are operably coupled to the gas flow path. First and second valves are operably coupled to the gas flow path such that when both first and second valves are in a fully open state, flows of gas from the first and second gas outlets are split according to the impedances of the first and second flow restrictors.

Abstract: Apparatuses for controlling gas flow are important components for delivering process gases for semiconductor fabrication. In one embodiment, a gas flow control system for achieving improved transient response in apparatuses for controlling gas flow is disclosed. Specifically, by providing a command to an apparatus to deliver a predetermined mass flow rate at a future turn on time, the apparatus is able to pre-pressurize a P1 volume so that the response time of the apparatus is no longer dependent on the speed of the apparatus's control valves and the limitations of the control loop.

Abstract: A gallium arsenide substrate which exhibits at least one surface having a surface oxide layer comprising gallium and arsenic oxides and which exhibits at least one surface having, according to an ellipsometric lateral substrate mapping with an optical surface analyzer, based on a substrate diameter of 150 mm as reference, a defect number of <6000 and/or a total defect area of less than 2 cm2, wherein a defect is defined as a continuous area of greater than 1000 ?m2 having a deviation from the average measurement signal in elipsometric lateral substrate mapping with an optical surface analyzer of at least ±0.05%.

Abstract: A gas flow control system for delivering a plurality of gas flows. The gas flow control system has a gas flow path extending from a gas inlet to first and second gas outlets. First and second flow restrictors are operably coupled to the gas flow path. First and second valves are operably coupled to the gas flow path such that when both first and second valves are in a fully open state, flows of gas from the first and second gas outlets are split according to the impedances of the first and second flow restrictors.

Abstract: The present invention relates to a novel provided gallium arsenide substrates as well as the use thereof. The gallium arsenide substrates provided according to the invention exhibit a so far not obtained surface quality, in particular a homogeneity of surface properties, which is detectable by means of optical surface analyzers, by way of example by means of ellipsometric lateral substrate mapping for optical contact-free quantitative characterization.

Abstract: A mass flow control apparatus having a monolithic base. The monolithic base has a gas inlet, a gas outlet, a first flow component mounting region, a second flow component mounting region, and a third flow component mounting region. The first flow component mounting region has a first inlet port and a first outlet port, the first inlet port being fluidly coupled to the gas inlet of the monolithic base. The third flow component mounting region has a first sensing port fluidly coupled to the gas outlet of the monolithic base.

Abstract: A mass flow control apparatus having a monolithic base. The monolithic base has a gas inlet, a gas outlet, a first flow component mounting region, a second flow component mounting region, and a third flow component mounting region. The first flow component mounting region has a first inlet port and a first outlet port, the first inlet port being fluidly coupled to the gas inlet of the monolithic base. The third flow component mounting region has a first sensing port fluidly coupled to the gas outlet of the monolithic base.

Abstract: Apparatuses for controlling gas flow are important components for delivering process gases for semiconductor fabrication. In one embodiment, a gas flow control system for achieving improved transient response in apparatuses for controlling gas flow is disclosed. Specifically, by providing a command to an apparatus to deliver a predetermined mass flow rate at a future turn on time, the apparatus is able to pre-pressurize a P1 volume so that the response time of the apparatus is no longer dependent on the speed of the apparatus's control valves and the limitations of the control loop.

Abstract: Apparatuses for controlling gas flow are important components for delivering process gases for semiconductor fabrication. In one embodiment, a method of achieving improved transient response in apparatuses for controlling gas flow is disclosed. Specifically, by providing a command to the apparatus to deliver a predetermined mass flow rate at a future turn on time, the apparatus is able to pre-pressurize a P1 volume so that the response time of the apparatus is no longer dependent on the speed of the apparatus's control valves and the limitations of the control loop.

Abstract: Apparatuses for controlling gas flow are important components for delivering process gases for semiconductor fabrication. In one embodiment, a method of calibrating an apparatus for controlling gas flow is disclosed. Specifically, the apparatus may be calibrated on installation using a two-step process of measuring the volume of gas box downstream from the apparatus by flowing nitrogen gas into the gas box and measuring the resulting temperature and rate of pressure rise. Using the computed volume of the gas box, a sweep of several mass flow rates may be performed using the process gas and the gas map for the process gas. The apparatus is calibrated based on the measured temperature and pressure values, which allow calculation of the actual mass flow rate for the process gas as compared with the commanded mass flow rates.

Abstract: The present invention relates to a novel process for producing a surface-treated gallium arsenide substrate as well as novel provided gallium arsenide substrates as such as well as the use thereof. The improvement of the process according to the invention is based on a particular final surface treatment with an oxidation treatment of at least one surface of the gallium arsenide substrate in dry condition by means of UV radiation and/or ozone gas, a contacting of the at least one surface of the gallium arsenide substrate with at least one liquid medium and a Marangoni drying of the gallium arsenide substrate. The gallium arsenide substrates provided according to the invention exhibit a so far not obtained surface quality, in particular a homogeneity of surface properties, which is detectable by means of optical surface analyzers, specifically by means of ellipsometric lateral substrate mapping for the optical contact-free quantitative characterization.

Abstract: Apparatuses for controlling gas flow are important components for delivering process gases for semiconductor fabrication. In one embodiment, a method of calibrating an apparatus for controlling gas flow is disclosed. Specifically, the apparatus may be calibrated on installation using a two-step process of measuring the volume of gas box downstream from the apparatus by flowing nitrogen gas into the gas box and measuring the resulting temperature and rate of pressure rise. Using the computed volume of the gas box, a sweep of several mass flow rates may be performed using the process gas and the gas map for the process gas. The apparatus is calibrated based on the measured temperature and pressure values, which allow calculation of the actual mass flow rate for the process gas as compared with the commanded mass flow rates.

Abstract: The present invention relates to a novel provided gallium arsenide substrates as well as the use thereof. The gallium arsenide substrates provided according to the invention exhibit a so far not obtained surface quality, in particular a homogeneity of surface properties, which is detectable by means of optical surface analyzers, by way of example by means of ellipsometric lateral substrate mapping for optical contact-free quantitative characterization.

Abstract: Apparatuses for controlling gas flow are important components for delivering process gases for semiconductor fabrication. In one embodiment, a method of achieving improved transient response in apparatuses for controlling gas flow is disclosed. Specifically, by providing a command to the apparatus to deliver a predetermined mass flow rate at a future turn on time, the apparatus is able to pre-pressurize a P1 volume so that the response time of the apparatus is no longer dependent on the speed of the apparatus's control valves and the limitations of the control loop.

Abstract: Systems, methods, and computer readable media for transferring data from a delivery item to a label for application of the label onto the delivery item are disclosed. In some aspects, the system can include a camera configured to capture an image of the data on the delivery item, a control computer including at least one hardware processor and memory, the control computer being configured to process the image of the data, integrate the image of the data into a label template, and to generate a print file from the label template, and at least one label applicator disposed after the camera relative to a direction of travel of the delivery item on a conveyor, the at least one label applicator being configured to print the label including the data contained in the print file and apply the printed label onto a top surface of the delivery item.

Abstract: Systems, methods, and computer readable media for transferring data from a delivery item to a label for application of the label onto the delivery item are disclosed. In some aspects, the system can include a camera configured to capture an image of the data on the delivery item, a control computer including at least one hardware processor and memory, the control computer being configured to process the image of the data, integrate the image of the data into a label template, and to generate a print file from the label template, and at least one label applicator disposed after the camera relative to a direction of travel of the delivery item on a conveyor, the at least one label applicator being configured to print the label including the data contained in the print file and apply the printed label onto a top surface of the delivery item.

Abstract: The present invention relates to a novel process for producing a surface-treated gallium arsenide substrate as well as novel provided gallium arsenide substrates as such as well as the use thereof. The improvement of the process according to the invention is based on a particular final surface treatment with an oxidation treatment of at least one surface of the gallium arsenide substrate in dry condition by means of UV radiation and/or ozone gas, a contacting of the at least one surface of the gallium arsenide substrate with at least one liquid medium and a Marangoni drying of the gallium arsenide substrate. The gallium arsenide substrates provided according to the invention exhibit a so far not obtained surface quality, in particular a homogeneity of surface properties, which is detectable by means of optical surface analyzers, specifically by means of ellipsometric lateral substrate mapping for the optical contact-free quantitative characterization.