Abstract: A multi-layer distributed capacitor structure comprises a bottom electrode layer overlying a monolithic substrate, intermediate pairs of layers of film electrode and dielectric material overlying the bottom electrode, and a top pair of layers of a film electrode and dielectric material overlying the intermediate pairs. The structure contains multiple openings, each opening extending from the top pair of layers through the intermediate layers and optionally through said bottom electrode. Each electrode layer also extends laterally beyond and around the entire periphery of the layers positioned above such that the electrode layers bordering on each opening has edges running along the perimeter of the opening which are left exposed for electrical connection to a circuit using wire interconnects.

Abstract: A multi-layer film capacitor structure has a bottom electrode layer on a monolithic substrate, intermediate pairs of layers of film electrode and dielectric material overlying the bottom electrode, and a top pair of layers of a film electrode and film dielectric overlying the intermediate pairs. The structure preferably has a mesa configuration, in which each electrode layer extends laterally beyond the periphery of the layers above it around the entire periphery of the device. Each electrode layer therefore has a top surface which is accessible at its projecting edge through a via, so that the electrodes can be accessed in any combination to permit any desired circuit connection. If desired the dielectric materials can have different frequency characteristics, allowing a single capacitor structure to be optimized for a filter. Either the bottom electrode or the top electrode or both can be grounded and capacitor connections can be made to intermediate layers, to reduce parasitic capacitance effects.