Abstract: A method for coating a multi-layered polymer film is disclosed including coating a first layer of polyimide onto a carrier, curing the first layer of polyimide by subjecting the first layer of polyimide to an elevated temperature, depositing a first layer of metal onto the cured first layer of polyimide, coating a second layer of polyimide onto the first layer of metal, and curing the second layer of polyimide by subjecting the second layer of polyimide to an elevated temperature. A flexible electronic device is also disclosed, including multiple interposed layers of polyimide and layers of metal, a dielectric barrier layer disposed on the top layer of polyimide, and a thin film transistor-based device disposed on the dielectric barrier layer. The flexible electronic device has little to no curl.

Abstract: Some embodiments include an electronic device. The electronic device includes a first scintillator layer, a transistor, and one or more device elements over the transistor, and the one or more device elements include a photodetector. Meanwhile, the first scintillator layer is monolithically integrated with at least one of the transistor or the one or more device elements. Other embodiments of related systems, devices, and methods are also disclosed.

Abstract: Some embodiments include an electronic device. The electronic device includes a first scintillator layer, a transistor, and one or more device elements over the transistor, and the one or more device elements include a photodetector. Meanwhile, the first scintillator layer is monolithically integrated with at least one of the transistor or the one or more device elements. Other embodiments of related systems, devices, and methods are also disclosed.

Abstract: Some embodiments include an electronic device. The electronic device includes a first scintillator layer, a transistor, and one or more device elements over the transistor, and the one or more device elements include a photodetector. Meanwhile, the first scintillator layer is monolithically integrated with at least one of the transistor or the one or more device elements. Other embodiments of related systems, devices, and methods are also disclosed.

Abstract: Some embodiments include an electronic device. The electronic device includes a first scintillator layer, a transistor, and one or more device elements over the transistor, and the one or more device elements include a photodetector. Meanwhile, the first scintillator layer is monolithically integrated with at least one of the transistor or the one or more device elements. Other embodiments of related systems, devices, and methods are also disclosed.

Abstract: Some embodiments include an imaging system. The imaging system includes an active matrix pixel array having a flexible substrate and a pixel. The pixel includes a transistor over the flexible substrate, and the transistor includes multiple active layers having a first active layer and a second active layer over the first active layer. Further, the active matrix pixel array also includes a photodiode over the transistor, and the photodiode includes an N-type layer over the transistor, an I layer over the N-type layer, and a P-type layer over the I layer. Meanwhile, the imaging system also includes a flexible scintillator layer over the active matrix pixel array. Other embodiments of related systems and methods are also disclosed.

Abstract: Some embodiments include an imaging system. The imaging system includes an active matrix pixel array having a flexible substrate and a pixel. The pixel includes a transistor over the flexible substrate, and the transistor includes multiple active layers having a first active layer and a second active layer over the first active layer. Further, the active matrix pixel array also includes a photodiode over the transistor, and the photodiode includes an N-type layer over the transistor, an I layer over the N-type layer, and a P-type layer over the I layer. Meanwhile, the imaging system also includes a flexible scintillator layer over the active matrix pixel array. Other embodiments of related systems and methods are also disclosed.

Abstract: Some embodiments include a method. The method can comprise: providing a carrier substrate; providing an adhesion modification layer over the carrier substrate; providing a device substrate; and coupling the device substrate and the carrier substrate together, the adhesion modification layer being located between the device substrate and the carrier substrate when the device substrate and the carrier substrate are coupled together. In these embodiments, the adhesion modification layer can be configured so that the device substrate couples indirectly with the carrier substrate by way of the adhesion modification layer with a first bonding force that is greater than a second bonding force by which the device substrate couples with the carrier substrate absent the adhesion modification layer. Other embodiments of related methods and devices are also disclosed.

Abstract: Some embodiments include a semiconductor device. The semiconductor device includes a transistor having a gate metal layer, a transistor composite active layer, and one or more contact elements over the transistor composite active layer. The transistor composite active layer includes a first active layer and a second active layer, the first active layer is over the gate metal layer, and the second active layer is over the first active layer. Meanwhile, the semiconductor device also includes one or more semiconductor elements forming a diode over the transistor. The semiconductor element(s) have an N-type layer over the transistor, an I layer over the N-type layer, and a P-type layer over the I layer. Other embodiments of related systems and methods are also disclosed.

Abstract: Some embodiments include a method. The method can comprise: providing a carrier substrate; providing an adhesion modification layer over the carrier substrate; providing a device substrate; and coupling the device substrate and the carrier substrate together, the adhesion modification layer being located between the device substrate and the carrier substrate when the device substrate and the carrier substrate are coupled together. In these embodiments, the adhesion modification layer can be configured so that the device substrate couples indirectly with the carrier substrate by way of the adhesion modification layer with a first bonding force that is greater than a second bonding force by which the device substrate couples with the carrier substrate absent the adhesion modification layer. Other embodiments of related methods and devices are also disclosed.

Abstract: Some embodiments include an imaging system. The imaging system includes an active matrix pixel array having a flexible substrate and a pixel. The pixel includes a transistor over the flexible substrate, and the transistor includes multiple active layers having a first active layer and a second active layer over the first active layer. Further, the active matrix pixel array also includes a photodiode over the transistor, and the photodiode includes an N-type layer over the transistor, an I layer over the N-type layer, and a P-type layer over the I layer. Meanwhile, the imaging system also includes a flexible scintillator layer over the active matrix pixel array. Other embodiments of related systems and methods are also disclosed.

Abstract: Some embodiments include a semiconductor device. The semiconductor device includes a transistor having a gate metal layer, a transistor composite active layer, and one or more contact elements over the transistor composite active layer. The transistor composite active layer includes a first active layer and a second active layer, the first active layer is over the gate metal layer, and the second active layer is over the first active layer. Meanwhile, the semiconductor device also includes one or more semiconductor elements forming a diode over the transistor. The semiconductor element(s) have an N-type layer over the transistor, an I layer over the N-type layer, and a P-type layer over the I layer. Other embodiments of related systems and methods are also disclosed.

Abstract: Some embodiments include a method of providing a semiconductor device. The method can include: (a) providing a flexible substrate; (b) depositing at least one layer of material over the flexible substrate, wherein the deposition of the at least one layer of material over the flexible substrate occurs at a temperature of at least 180° C.; and (c) providing a diffusion barrier between a metal layer and an a-Si layer. Other embodiments are disclosed in this application.

Abstract: In some embodiments, a method of etching an organosiloxane dielectric material can include: (a) providing the organosiloxane dielectric material; (b) providing a patterned mask over the organosiloxane dielectric material; and (c) reactive ion etching the organosiloxane dielectric material. Other embodiments are disclosed in this application.

Abstract: Some embodiments include a method of providing a semiconductor device. The method can include: (a) providing a flexible substrate; (b) depositing at least one layer of material over the flexible substrate, wherein the deposition of the at least one layer of material over the flexible substrate occurs at a temperature of at least 180° C.; and (c) providing a diffusion barrier between a metal layer and an a-Si layer. Other embodiments are disclosed in this application.

Abstract: In some embodiments, a method of etching an organosiloxane dielectric material can include: (a) providing the organosiloxane dielectric material; (b) providing a patterned mask over the organosiloxane dielectric material; and (c) reactive ion etching the organosiloxane dielectric material. Other embodiments are disclosed in this application.

Abstract: In some embodiments, a method of providing a semiconductor device can include: (a) providing a substrate; (b) depositing a first metal layer over the substrate; (c) spin-coating a first dielectric material over the first metal layer, where the first dielectric material includes an organic siloxane-based dielectric material; and (d) depositing a second dielectric material comprising silicon nitride over the first dielectric material. Other embodiments are disclosed in this application.