Patents by Inventor Michael Mckeag

Michael Mckeag has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for copper damascence fill for forming an interconnect
    Publication number: 20070298607
    Abstract: Methods of fabricating an interconnect, which fundamentally comprises etching back on an overhang section formed over a portion of an opening formed in a dielectric layer, said etching back is selected from one of an electropolishing process and chemical etching process, and said etching back removes the overhang section at a controlled etch rate of about 10 ?/sec to 70 ?/sec; and depositing a conductive material into the opening so as to fill the opening and form an interconnect.
    Type: Application
    Filed: June 23, 2006
    Publication date: December 27, 2007
    Inventors: Tatyana N. Andryushchenko, Ebrahim Andideh, Anne E. Miller, Michael McKeag
  • Thermo-mechanically robust C4 ball-limiting metallurgy to prevent failure due to die-package interaction and method of making same
    Patent number: 6740427
    Abstract: The invention relates to a ball limiting metallurgy stack for an electrical device that contains a tin diffusion barrier and thermo-mechanical buffer layer disposed upon a refractory metal first layer. The multi-diffusion barrier layer stack resists tin migration toward the upper metallization of the device.
    Type: Grant
    Filed: September 21, 2001
    Date of Patent: May 25, 2004
    Assignee: Intel Corporation
    Inventors: Madhav Datta, Dave Emory, Tzeun-luh Huang, Subhash M. Joshi, Christine A. King, Zhiyong Ma, Thomas Marieb, Michael Mckeag, Doowon Suh, Simon Yang
  • Thermo-mechanically robust C4 ball-limiting metallurgy to prevent failure due to die-package interaction and method of making same
    Publication number: 20030059644
    Abstract: The invention relates to a ball limiting metallurgy stack for an electrical device that contains a tin diffusion barrier and thermo-mechanical buffer layer disposed upon a refractory metal first layer. The multi-diffusion barrier layer stack resists tin migration toward the upper metallization of the device.
    Type: Application
    Filed: September 21, 2001
    Publication date: March 27, 2003
    Applicant: Intel Corporation
    Inventors: Madhav Datta, Dave Emory, Tzeun-luh Huang, Subhash M. Joshi, Christine A. King, Zhiyong Ma, Thomas Marieb, Michael Mckeag, Doowon Suh, Simon Yang