Patents by Inventor Michael Mendicino
Michael Mendicino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10149461Abstract: Porcine animals, tissue and organs as well as cells and cell lines derived from such animals are provided that lack functional endogenous immunoglobulin loci and are deficient in immunoglobulin expression and B-cells. These animals are useful as model systems for research and for development of new pharmaceutical and biological agents. In addition, methods are provided to prepare such animals.Type: GrantFiled: March 23, 2015Date of Patent: December 11, 2018Assignee: Revivicor, Inc.Inventors: David L. Ayares, Michael Mendicino, Kevin Wells, Amy S. Dandro
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Publication number: 20160278349Abstract: Porcine animals, tissue and organs as well as cells and cell lines derived from such animals are provided that lack functional endogenous immunoglobulin loci and are deficient in immunoglobulin expression and B-cells. These animals are useful as model systems for research and for development of new pharmaceutical and biological agents. In addition, methods are provided to prepare such animals.Type: ApplicationFiled: March 23, 2015Publication date: September 29, 2016Inventors: David L. Ayares, Michael Mendicino, Kevin Wells, Amy Dandro
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Patent number: 8440539Abstract: A semiconductor fabrication process includes forming a hard mask, e.g., silicon nitride, over an active layer of a silicon on insulator (SOI) wafer, removing a portion of the hard mask and the active layer to form a trench, and forming an isolation dielectric in the trench where the dielectric exerts compressive strain on a channel region of the active layer. Forming the dielectric may include performing a thermal oxidation. Before performing the thermal oxidation, semiconductor structures may be formed, e.g., by epitaxy, on sidewalls of the trench. The structures may be silicon or a silicon compound, e.g., silicon germanium. During the thermal oxidation, the semiconductor structures are consumed. In the case of a silicon germanium, the germanium may diffuse during the thermal oxidation to produce a silicon germanium channel region.Type: GrantFiled: July 31, 2007Date of Patent: May 14, 2013Assignee: Freescale Semiconductor, Inc.Inventors: Mariam G. Sadaka, Michael A. Mendicino
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Publication number: 20120090039Abstract: Porcine animals, tissue and organs as well as cells and cell lines derived from such animals are provided that lack functional endogenous immunoglobulin loci and are deficient in immunoglobulin expression and B-cells. These animals are useful as model systems for research and for development of new pharmaceutical and biological agents. In addition, methods are provided to prepare such animals.Type: ApplicationFiled: April 22, 2011Publication date: April 12, 2012Inventors: David L. Ayares, Michael Mendicino, Kevin Wells, Amy Dandro
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Patent number: 7573101Abstract: A semiconductor topography (10) is provided which includes a semiconductor-on-insulator (SOI) substrate having a conductive line (16) arranged within an insulating layer (22) of the SOI substrate. A method for forming an SOI substrate with such a configuration includes forming a first conductive line (16) within an insulating layer (22) arranged above a wafer substrate (12) and forming a silicon layer (24) upon surfaces of the first conductive line and the insulating layer. A further method is provided which includes the formation of a transistor gate (28) upon an SOI substrate having a conductive line (16) embedded therein and implanting dopants within the semiconductor topography to form source and drain regions (30) within an upper semiconductor layer (24) of the SOI substrate such that an underside of one of the source and drain regions is in contact with the conductive line.Type: GrantFiled: January 29, 2008Date of Patent: August 11, 2009Assignee: Freescale Semiconductor, IncInventors: Perry H. Pelley, III, Troy L. Cooper, Michael A. Mendicino
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Publication number: 20090035914Abstract: A semiconductor fabrication process includes forming a hard mask, e.g., silicon nitride, over an active layer of a silicon on insulator (SOI) wafer, removing a portion of the hard mask and the active layer to form a trench, and forming an isolation dielectric in the trench where the dielectric exerts compressive strain on a channel region of the active layer. Forming the dielectric may include performing a thermal oxidation. Before performing the thermal oxidation, semiconductor structures may be formed, e.g., by epitaxy, on sidewalls of the trench. The structures may be silicon or a silicon compound, e.g., silicon germanium. During the thermal oxidation, the semiconductor structures are consumed. In the case of a silicon germanium, the germanium may diffuse during the thermal oxidation to produce a silicon germanium channel region.Type: ApplicationFiled: July 31, 2007Publication date: February 5, 2009Inventors: Mariam G. Sadaka, Michael A. Mendicino
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Publication number: 20080135938Abstract: A semiconductor topography (10) is provided which includes a semiconductor-on-insulator (SOI) substrate having a conductive line (16) arranged within an insulating layer (22) of the SOI substrate. A method for forming an SOI substrate with such a configuration includes forming a first conductive line (16) within an insulating layer (22) arranged above a wafer substrate (12) and forming a silicon layer (24) upon surfaces of the first conductive line and the insulating layer. A further method is provided which includes the formation of a transistor gate (28) upon an SOI substrate having a conductive line (16) embedded therein and implanting dopants within the semiconductor topography to form source and drain regions (30) within an upper semiconductor layer (24) of the SOI substrate such that an underside of one of the source and drain regions is in contact with the conductive line.Type: ApplicationFiled: January 29, 2008Publication date: June 12, 2008Applicant: FREESCALE SEMICONDUCTOR, INC.Inventors: Perry H. Pelley, Troy L. Cooper, Michael A. Mendicino
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Patent number: 7345344Abstract: A semiconductor topography (10) is provided which includes a semiconductor-on-insulator (SOI) substrate having a conductive line (16) arranged within an insulating layer (22) of the SOI substrate. A method for forming an SOI substrate with such a configuration includes forming a first conductive line (16) within an insulating layer (22) arranged above a wafer substrate (12) and forming a silicon layer (24) upon surfaces of the first conductive line and the insulating layer. A further method is provided which includes the formation of a transistor gate (28) upon an SOI substrate having a conductive line (16) embedded therein and implanting dopants within the semiconductor topography to form source and drain regions (30) within an upper semiconductor layer (24) of the SOI substrate such that an underside of one of the source and drain regions is in contact with the conductive line.Type: GrantFiled: February 16, 2006Date of Patent: March 18, 2008Assignee: Freescale Semiconductor, Inc.Inventors: Perry H. Pelley, III, Troy L. Cooper, Michael A. Mendicino
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Publication number: 20070200173Abstract: A semiconductor topography (10) is provided which includes a semiconductor-on-insulator (SOI) substrate having a conductive line (16) arranged within an insulating layer (22) of the SOI substrate. A method for forming an SOI substrate with such a configuration includes forming a first conductive line (16) within an insulating layer (22) arranged above a wafer substrate (12) and forming a silicon layer (24) upon surfaces of the first conductive line and the insulating layer. A further method is provided which includes the formation of a transistor gate (28) upon an SOI substrate having a conductive line (16) embedded therein and implanting dopants within the semiconductor topography to form source and drain regions (30) within an upper semiconductor layer (24) of the SOI substrate such that an underside of one of the source and drain regions is in contact with the conductive line.Type: ApplicationFiled: February 16, 2006Publication date: August 30, 2007Inventors: Perry Pelley, Troy Cooper, Michael Mendicino
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Publication number: 20070184600Abstract: Methods for forming portions of source and drain (S/D) regions of a first ensuing transistor (40) to include a semiconductor material (47) having a different composition of non-dopant elements than portions of S/D regions (35) of a second ensuing transistor (30) of opposite conductivity type are provided. The methods additionally include forming another semiconductor material (48) upon at least one set of the S/D regions of the ensuing transistors such that S/D surface layers of the ensuing transistors include substantially the same composition of non-dopant elements. A resulting semiconductor topography includes a pair of CMOS transistors (30, 40) collectively having S/D region surfaces with substantially the same composition of non-dopant elements. The S/D regions of one transistor (40) of the pair of CMOS transistors includes an underlying layer (47) having a different composition of non-dopant elements than underlying layers of the S/D regions (35) of the other transistor (30).Type: ApplicationFiled: February 6, 2006Publication date: August 9, 2007Inventors: Da Zhang, Michael Mendicino, Bich-Yen Nguyen
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Patent number: 7161199Abstract: A transistor comprises a source and drain positioned within an active region. A gate overlies a channel area of the active region, wherein the channel region separates the source and drain. The transistor further comprises at least one stress modifier and capacitive reduction feature extending from the source to the drain and underlying the gate for reducing capacitance associated with the gate, source and drain. The at least one stress modifier and capacitive reduction feature comprises dielectric and includes a shape defined at least partially by the active region.Type: GrantFiled: August 24, 2004Date of Patent: January 9, 2007Assignee: Freescale Semiconductor, Inc.Inventors: Jian Chen, Michael A. Mendicino, Vance H. Adams, Choh-Fei Yeap, Venkat R. Kolagunta
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Patent number: 7122421Abstract: A semiconductor (10) has an active device, such as a transistor, with a directly underlying passive device, such as a capacitor (75, 77, 79), that are connected by a via or conductive region (52) and interconnect (68, 99). The via or conductive region (52) contacts a bottom surface of a diffusion or source region (22) of the transistor and contacts a first (75) of the capacitor electrodes. A laterally positioned vertical via (32, 54, 68) and interconnect (99) contacts a second (79) of the capacitor electrodes. A metal interconnect or conductive material (68) may be used as a power plane that saves circuit area by implementing the power plane underneath the transistor rather than adjacent the transistor.Type: GrantFiled: April 4, 2005Date of Patent: October 17, 2006Assignee: Freescale Semiconductor, Inc.Inventors: Hector Sanchez, Michael A. Mendicino, Byoung W. Min, Kathleen C. Yu
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Publication number: 20060194384Abstract: A semiconductor device structure uses two semiconductor layers to separately optimize N and P channel transistor carrier mobility. The conduction characteristic for determining this is a combination of material type of the semiconductor, crystal plane, orientation, and strain. Hole mobility is improved in P channel transistors when the conduction characteristic is characterized by the semiconductor material being silicon germanium, the strain being compressive, the crystal plane being (100), and the orientation being <100>. In the alternative, the crystal plane can be (111) and the orientation in such case is unimportant. The preferred substrate for N-type conduction is different from the preferred (or optimum) substrate for P-type conduction. The N channel transistors preferably have tensile strain, silicon semiconductor material, and a (100) plane. With the separate semiconductor layers, both the N and P channel transistors can be optimized for carrier mobility.Type: ApplicationFiled: May 9, 2006Publication date: August 31, 2006Applicant: Freescale Semiconductor, Inc.Inventors: Suresh Venkatesan, Mark Foisy, Michael Mendicino, Marius Orlowski
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Publication number: 20060043422Abstract: A transistor comprises a source and drain positioned within an active region. A gate overlies a channel area of the active region, wherein the channel region separates the source and drain. The transistor further comprises at least one stress modifier and capacitive reduction feature extending from the source to the drain and underlying the gate for reducing capacitance associated with the gate, source and drain. The at least one stress modifier and capacitive reduction feature comprises dielectric and includes a shape defined at least partially by the active region.Type: ApplicationFiled: August 24, 2004Publication date: March 2, 2006Inventors: Jian Chen, Michael Mendicino, Vance Adams, Choh-Fei Yeap, Venkat Kolagunta
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Publication number: 20060043500Abstract: A transistor comprises an active region having a periphery with opposing sides and a source and a drain positioned within the active region. A gate overlies a channel area of the active region, the channel region separating the source and drain. The transistor further includes at least one stress modifying feature extending from an edge of the active region on at least one of a source side or a drain side and toward the channel area but not entering the channel area. The at least one stress modifying feature includes a dielectric.Type: ApplicationFiled: August 24, 2004Publication date: March 2, 2006Inventors: Jian Chen, Michael Mendicino, Vance Adams, Choh-Fei Yeap, Venkat Kolagunta
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Publication number: 20050275018Abstract: A semiconductor device structure uses two semiconductor layers to separately optimize N and P channel transistor carrier mobility. The conduction characteristic for determining this is a combination of material type of the semiconductor, crystal plane, orientation, and strain. Hole mobility is improved in P channel transistors when the conduction characteristic is characterized by the semiconductor material being silicon germanium, the strain being compressive, the crystal plane being (100), and the orientation being <100>. In the alternative, the crystal plane can be (111) and the orientation in such case is unimportant. The preferred substrate for N-type conduction is different from the preferred (or optimum) substrate for P-type conduction. The N channel transistors preferably have tensile strain, silicon semiconductor material, and a (100) plane. With the separate semiconductor layers, both the N and P channel transistors can be optimized for carrier mobility.Type: ApplicationFiled: June 10, 2004Publication date: December 15, 2005Inventors: Suresh Venkatesan, Mark Foisy, Michael Mendicino, Marius Orlowski
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Publication number: 20050167782Abstract: A semiconductor (10) has an active device, such as a transistor, with a directly underlying passive device, such as a capacitor (75, 77, 79), that are connected by a via or conductive region (52) and interconnect (68, 99). The via or conductive region (52) contacts a bottom surface of a diffusion or source region (22) of the transistor and contacts a first (75) of the capacitor electrodes. A laterally positioned vertical via (32, 54, 68) and interconnect (99) contacts a second (79) of the capacitor electrodes. A metal interconnect or conductive material (68) may be used as a power plane that saves circuit area by implementing the power plane underneath the transistor rather than adjacent the transistor.Type: ApplicationFiled: April 4, 2005Publication date: August 4, 2005Inventors: Hector Sanchez, Michael Mendicino, Byoung Min, Kathleen Ju
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Patent number: 6921961Abstract: A semiconductor (10) has an active device, such as a transistor, with a directly underlying passive device, such as a capacitor (75, 77, 79), that are connected by a via or conductive region (52) and interconnect (68, 99). The via or conductive region (52) contacts a bottom surface of a diffusion or source region (22) of the transistor and contacts a first (75) of the capacitor electrodes. A laterally positioned vertical via (32, 54, 68) and interconnect (99) contacts a second (79) of the capacitor electrodes. A metal interconnect or conductive material (68) may be used as a power plane that saves circuit area by implementing the power plane underneath the transistor rather than adjacent the transistor.Type: GrantFiled: September 22, 2004Date of Patent: July 26, 2005Assignee: Freescale Semiconductor, Inc.Inventors: Hector Sanchez, Michael A. Mendicino, Byoung W. Min, Kathleen C. Yu
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Publication number: 20050042867Abstract: A semiconductor (10) has an active device, such as a transistor, with a directly underlying passive device, such as a capacitor (75, 77, 79), that are connected by a via or conductive region (52) and interconnect (68, 99). The via or conductive region (52) contacts a bottom surface of a diffusion or source region (22) of the transistor and contacts a first (75) of the capacitor electrodes. A laterally positioned vertical via (32, 54, 68) and interconnect (99) contacts a second (79) of the capacitor electrodes. A metal interconnect or conductive material (68) may be used as a power plane that saves circuit area by implementing the power plane underneath the transistor rather than adjacent the transistor.Type: ApplicationFiled: September 22, 2004Publication date: February 24, 2005Inventors: Hector Sanchez, Michael Mendicino, Byoung Min, Kathleen Yu
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Patent number: 6838332Abstract: A semiconductor (10) has an active device, such as a transistor, with a directly underlying passive device, such as a capacitor (75, 77, 79), that are connected by a via or conductive region (52) and interconnect (68, 99). The via or conductive region (52) contacts a bottom surface of a diffusion or source region (22) of the transistor and contacts a first (75) of the capacitor electrodes. A laterally positioned vertical via (32, 54, 68) and interconnect (99) contacts a second (79) of the capacitor electrodes. A metal interconnect or conductive material (68) may be used as a power plane that saves circuit area by implementing the power plane underneath the transistor rather than adjacent the transistor.Type: GrantFiled: August 15, 2003Date of Patent: January 4, 2005Assignee: Freescale Semiconductor, Inc.Inventors: Hector Sanchez, Michael A. Mendicino, Byoung W. Min, Kathleen C. Yu