Patents by Inventor Michael Mian

Michael Mian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8004061
    Abstract: The radio frequency (RF) impedance of a metal trace at gigahertz frequencies is reduced by forming the metal trace to have a base region and a number of fins that extend away from the base region. When formed in a spiral configuration having a number of loops, the metal trace forms an inductor with an increased quality factor (Q).
    Type: Grant
    Filed: July 23, 2004
    Date of Patent: August 23, 2011
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Peter Johnson, Kyuwoon Hwang, Michael Mian, Robert Drury
  • Patent number: 7642116
    Abstract: The loss of photogenerated electrons to surface electron-hole recombination sites is minimized by utilizing a first p-type surface region to form a depletion region that functions as a first barrier that repels photogenerated electrons from the surface recombination sites, and a second p-type surface region that provides a substantial change in the dopant concentration.
    Type: Grant
    Filed: June 28, 2006
    Date of Patent: January 5, 2010
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Michael Mian, Robert Drury
  • Patent number: 7373833
    Abstract: A pressure sensing system formed in a monolithic semiconductor substrate. The pressure sensing system comprises a pressure sensing device formed on the monolithic semiconductor substrate. The pressure sensing device is adapted to be disposed in an environment for developing an electrical pressure signal corresponding to the pressure in the environment. The system includes driver circuitry formed in the monolithic semiconductor substrate. The driver circuitry is responsive to input electrical signal for generating an output pressure signal. A conductive interconnect structure formed in the monolithic semiconductor substrate to electrically connects the pressure sensing device to the driver circuitry such that electrical pressure signals developed by the pressure sensing device are provided as input electrical signals to the driver circuitry.
    Type: Grant
    Filed: August 9, 2006
    Date of Patent: May 20, 2008
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Michael Mian, James McGinty, Robert Drury
  • Patent number: 7328609
    Abstract: A wireless tire pressure sensing system based upon a Schrader valve design is provided. The system includes a valve body, a valve pin and a compression element for sealing engaging the valve body and the valve pin to maintain tire pressure. A pressure sensing device mounted within the valve body and connected to valve pin senses the pressure within the tire and provides its signal to the valve pin. The valve pin is adapted as a component of an antenna that transmits a wireless pressure signal to a remote receiver/transmitter mounted on the vehicle. The receiver/transmitter transmits a corresponding signal to a vehicle control system that generates a warning signal when the tire pressure is below a threshold safety value.
    Type: Grant
    Filed: October 29, 2004
    Date of Patent: February 12, 2008
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Michael Mian, Kyuwoon Hwang, Robert Drury
  • Patent number: 7309639
    Abstract: The RF impedance of a metal trace at gigahertz frequencies is reduced by forming the metal trace to have a base region and a number of fingers that extend away from the base region. When formed to have a number of loops, the metal trace forms an inductor with an increased Q.
    Type: Grant
    Filed: April 8, 2004
    Date of Patent: December 18, 2007
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Peter Johnson, Kyuwoon Hwang, Michael Mian, Robert Drury
  • Patent number: 7301212
    Abstract: The sensitivity of a MEMS microphone is substantially increased by using a portion of the package that holds the MEMS microphone as the diaphragm or a part of the diaphragm. As a result, the diaphragm of the present invention is substantially larger, and thus more sensitive, than the diaphragm in a comparably-sized MEMS microphone die.
    Type: Grant
    Filed: July 30, 2004
    Date of Patent: November 27, 2007
    Assignee: National Semiconductor Corporation
    Inventors: Michael Mian, Robert Drury, Peter J. Hopper
  • Patent number: 7239712
    Abstract: An inductor-based integrated MEMS microphone and a method of making the microphone is provided. The microphone structure includes a vibrating inductor that is suspended over another stationary inductor such that the magnetic field induced from one inductor induces an electrical potential across the other. The stationary inductor is embedded in a dielectric material that is etched out over the stationary inductor to provide the cavity over which the vibrating inductor is suspended.
    Type: Grant
    Filed: June 23, 2004
    Date of Patent: July 3, 2007
    Assignee: National Semiconductor Corporation
    Inventors: Robert Drury, Peter J. Hopper, Michael Mian, Peter Johnson
  • Patent number: 7223680
    Abstract: The RF impedance of a metal trace at gigahertz frequencies is reduced by forming the metal trace to have a base region and a number of fingers that extend away from the base region. When formed to have a number of loops, the metal trace forms an inductor with an increased Q.
    Type: Grant
    Filed: December 3, 2003
    Date of Patent: May 29, 2007
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Peter Johnson, Kyuwoon Hwang, Michael Mian, Robert Drury
  • Publication number: 20060278009
    Abstract: A pressure sensing system formed in a monolithic semiconductor substrate. The pressure sensing system comprises a pressure sensing device formed on the monolithic semiconductor substrate. The pressure sensing device is adapted to be disposed in an environment for developing an electrical pressure signal corresponding to the pressure in the environment. The system includes driver circuitry formed in the monolithic semiconductor substrate. The driver circuitry is responsive to input electrical signal for generating an output pressure signal. A conductive interconnect structure formed in the monolithic semiconductor substrate to electrically connects the pressure sensing device to the driver circuitry such that electrical pressure signals developed by the pressure sensing device are provided as input electrical signals to the driver circuitry.
    Type: Application
    Filed: August 9, 2006
    Publication date: December 14, 2006
    Inventors: Peter Hopper, Michael Mian, James McGinty, Robert Drury
  • Patent number: 7121146
    Abstract: A pressure sensing system formed in a monolithic semiconductor substrate. The pressure sensing system comprises a pressure sensing device formed on the monolithic semiconductor substrate. Pressure sensing device is adapted to be disposed in an environment for developing an electrical pressure signal corresponding to the pressure in the environment. The system includes driver circuitry formed in the monolithic semiconductor substrate. The driver circuitry is responsive to input electrical signal for generating an output pressure signal. A conductive interconnect structure formed in the monolithic semiconductor substrate to electrically connects the pressure sensing device to the driver circuitry such that electrical pressure signals developed by the pressure sensing device are provided as input electrical signals to the driver circuitry.
    Type: Grant
    Filed: October 29, 2004
    Date of Patent: October 17, 2006
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Michael Mian, Jim McGinty, Robert Drury
  • Patent number: 7105906
    Abstract: The loss of photogenerated electrons to surface electron-hole recombination sites is minimized by utilizing a first p-type surface region to form a depletion region that functions as a first barrier that repels photogenerated electrons from the surface recombination sites, and a second p-type surface region that provides a substantial change in the dopant concentration.
    Type: Grant
    Filed: November 19, 2003
    Date of Patent: September 12, 2006
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Michael Mian, Robert Drury
  • Patent number: 7098044
    Abstract: The RF impedance of a metal trace at gigahertz frequencies is reduced by forming the metal trace to have a base region and a number of fingers that extend away from the base region. When formed to have a number of loops, the metal trace forms an inductor with an increased Q.
    Type: Grant
    Filed: January 16, 2004
    Date of Patent: August 29, 2006
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Peter Johnson, Kyuwoon Hwang, Michael Mian, Robert Drury
  • Patent number: 7057174
    Abstract: A photon detector capable of detecting gigahertz frequency optical signals utilizes a layer of photonic material that is formed adjacent to the coil of an inductor. When a pulsed light source is applied to the layer of photonic material, the photonic material generates eddy currents that alter the magnetic flux of the inductor. The signals can then be detected by detecting the change in the magnetic flux.
    Type: Grant
    Filed: January 30, 2003
    Date of Patent: June 6, 2006
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Philipp Lindorfer, Vladislav Vashchenko, Michael Mian
  • Patent number: 7022532
    Abstract: Spin-based microelectronic devices can be realized by utilizing ferromagnetic structures that make good ohmic contact with silicon, in order to avoid the Schottky barrier problem plaguing existing approaches to spin-based microelectronics, while allowing the devices to be based on silicon substrates, which are well-known and used in the industry. Thin layers of metal silicide, such as CoSi2 and NiSi2, are used as an intermediate layer between ferromagnetic contacts, such as cobalt and nickel contacts, and the silicon substrate. The thin silicide layers provide good ohmic contact between the ferromagnetic contacts and silicon, such that spin-polarized carriers can be injected into the silicon, and detected out of the silicon, without loss of spin polarization.
    Type: Grant
    Filed: August 31, 2005
    Date of Patent: April 4, 2006
    Assignee: National Semiconductor Corporation
    Inventors: Vladislav Vashchenko, Michael Mian, Peter J. Hopper
  • Patent number: 7022968
    Abstract: An optical sensor provides information about the burn of the fuel mixture in the combustion chamber of an internal combustion engine as well as the timing and waveform of the spark that ignites the fuel mixture in the combustion chamber. The optical sensor can be implemented as a stand-alone device, or incorporated into a spark plug.
    Type: Grant
    Filed: October 21, 2003
    Date of Patent: April 4, 2006
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Philipp Lindorfer, Michael Mian, Robert Drury
  • Patent number: 7021151
    Abstract: A pressure sensing system formed in a monolithic semiconductor substrate. The pressure sensing system comprises a pressure sensing device formed on the monolithic semiconductor substrate. Pressure sensing device is adapted to be disposed in an environment for developing an electrical pressure signal corresponding to the pressure in the environment. The system includes driver circuitry formed in the monolithic semiconductor substrate. The driver circuitry is responsive to input electrical signal for generating an output pressure signal. A conductive interconnect structure formed in the monolithic semiconductor substrate to electrically connects the pressure sensing device to the driver circuitry such that electrical pressure signals developed by the pressure sensing device are provided as input electrical signals to the driver circuitry.
    Type: Grant
    Filed: October 29, 2004
    Date of Patent: April 4, 2006
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Michael Mian, Jim McGinty, Robert Drury
  • Patent number: 6963091
    Abstract: Spin-based microelectronic devices can be realized by utilizing ferromagnetic structures that make good ohmic contact with silicon, in order to avoid the Schottky barrier problem plaguing existing approaches to spin-based microelectronics, while allowing the devices to be based on silicon substrates, which are well-known and used in the industry. Thin layers of metal silicide, such as CoSi2 and NiSi2, are used as an intermediate layer between ferromagnetic contacts, such as cobalt and nickel contacts, and the silicon substrate. The thin silicide layers provide good ohmic contact between the ferromagnetic contacts and silicon, such that spin-polarized carriers can be injected into the silicon, and detected out of the silicon, without loss of spin polarization.
    Type: Grant
    Filed: December 22, 2003
    Date of Patent: November 8, 2005
    Assignee: National Semiconductor Corporation
    Inventors: Vladislav Vashchenko, Michael Mian, Peter J. Hopper
  • Patent number: 6958194
    Abstract: An imaging cell reduces recombination losses and increases sensitivity by forming a low resistance lateral path with a silicon germanium layer of a conductivity type that is sandwiched between silicon layers of the same conductivity type. The silicon germanium layer also provides a quantum well from which photo-generated electrons find it difficult to escape, thereby providing a barrier that reduces cross-talk.
    Type: Grant
    Filed: October 21, 2003
    Date of Patent: October 25, 2005
    Assignee: Foveon, Inc.
    Inventors: Peter J. Hopper, Philipp Lindorfer, Michael Mian, Robert Drury
  • Patent number: 6956269
    Abstract: Spin-based microelectronic devices can be realized by utilizing spin-polarized ferromagnetic materials positioned near, or embedded in, a semiconductor channel of a microelectronic device. Applying an electric field across the channel can cause carriers flowing through the channel to deviate toward one of the ferromagnetic materials, such that the spin of the carriers tends to align with the spin polarization of the respective material. Such a process allows for the controlled spin-polarization of carriers in a semiconductor channel, and hence the development of spin-based microelectronics, without having to inject spin-polarized carriers from a ferromagnet into a semiconductor channel. Such a process avoids the Schottky barrier problem plaguing existing approaches to spin-based microelectronics, while allowing the devices to be based on silicon substrates that are well-known and used in the industry.
    Type: Grant
    Filed: December 22, 2003
    Date of Patent: October 18, 2005
    Assignee: National Semiconductor Corporation
    Inventors: Vladislav Vashchenko, Michael Mian, Peter J. Hopper
  • Patent number: 6864581
    Abstract: The RF impedance of a metal trace at gigahertz frequencies is reduced by forming the metal trace to have a base region and a number of fingers that extend away from the base region. When formed to have a number of loops, the metal trace forms an inductor with an increased Q.
    Type: Grant
    Filed: August 15, 2002
    Date of Patent: March 8, 2005
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Peter Johnson, Kyuwoon Hwang, Michael Mian, Robert Drury