Abstract: Various embodiments of the present disclosure relate to apparatuses and methods for regulators providing shared current from multiple input supplies. A regulator can include a first portion configured to receive a first supply voltage and to output a first current drawn from the first supply voltage by a load, and a second portion configured to receive a second supply voltage. The regulator can include a current control circuit configured to, responsive to a load current corresponding the load meeting a particular criteria, initiate current sharing such that the load current is subsequently shared between the first supply voltage and the second supply voltage.

Abstract: A semiconductor device is disclosed including an integrated memory module. The integrated memory module may include a pair of semiconductor die, which together, operate as a single, integrated flash memory. In one example, the first die may include the memory cell array and the second die may include the logic circuit such as CMOS integrated circuits. In one example, the second die may be flip-chip bonded to the first die. The flip-chip bond pads on the first and second dies may be made small, with a small pitch, to allow a large number of electrical interconnections between the first and second semiconductor dies.

Abstract: A semiconductor device is disclosed including one or more integrated memory modules. Each integrated memory module may include a pair of semiconductor die, which together, operate as a single, integrated memory. In one example, the first die may include the memory cell array and the second die may include the logic circuit such as CMOS integrated circuits. In one example, the first die may be flip-chip bonded to the second die.

Abstract: A semiconductor device is disclosed including an integrated memory module. The integrated memory module may include a pair of semiconductor die, which together, operate as a single, integrated flash memory. In one example, the first die may include the memory cell array and the second die may include the logic circuit such as CMOS integrated circuits. In one example, the second die may be flip-chip bonded to the first die. The flip-chip bond pads on the first and second dies may be made small, with a small pitch, to allow a large number of electrical interconnections between the first and second semiconductor dies.

Abstract: A semiconductor device is disclosed including an integrated memory module. The integrated memory module may include a pair of semiconductor die, which together, operate as a single, integrated flash memory. In one example, the first die may include the memory cell array and the second die may include the logic circuit such as CMOS integrated circuits. In one example, the second die may be flip-chip bonded to the first die. The flip-chip bond pads on the first and second dies may be made small, with a small pitch, to allow a large number of electrical interconnections between the first and second semiconductor dies.

Abstract: A semiconductor device is disclosed including an integrated memory module. The integrated memory module may include a pair of semiconductor die, which together, operate as a single, integrated flash memory. In one example, the first die may include the memory cell array and the second die may include the logic circuit such as CMOS integrated circuits. In one example, the second die may be flip-chip bonded to the first die. The flip-chip bond pads on the first and second dies may be made small, with a small pitch, to allow a large number of electrical interconnections between the first and second semiconductor dies.

Abstract: A semiconductor device is disclosed including one or more integrated memory modules. Each integrated memory module may include a pair of semiconductor die, which together, operate as a single, integrated memory. In one example, the first die may include the memory cell array and the second die may include the logic circuit such as CMOS integrated circuits. In one example, the first die may be flip-chip bonded to the second die.

Abstract: A non-volatile storage system includes a plurality of memory dies and an interface circuit. Each memory die includes a wide I/O interface electrically coupled to another wide I/O interface of another memory die of the plurality of memory dies. The interface circuit is physically separate from the memory dies. The interface circuit includes a first interface and a second interface. The first interface comprises a wide I/O interface electrically coupled to a wide I/O interface of at least one of the memory dies of the plurality of memory dies. The second interface is a narrow I/O interface configured to communicate with an external circuit.

Abstract: A wide I/O semiconductor device is disclosed including a memory die stack wire bonded to an interface chip. The stack of memory die may be wire bonded to the interface chip using a wire bond scheme optimized for die-to-die connection and optimized for the large number of wire bond connections in a wide I/O semiconductor device. This method can achieve significant BW increase by improving packaging yield and costs, not possible with current packaging schemes.

Abstract: A wide I/O semiconductor device is disclosed including a memory die stack wire bonded to an interface chip. The stack of memory die may be wire bonded to the interface chip using a wire bond scheme optimized for die-to-die connection and optimized for the large number of wire bond connections in a wide I/O semiconductor device. This method can achieve significant BW increase by improving packaging yield and costs, not possible with current packaging schemes.

Abstract: A non-volatile storage system includes a plurality of memory dies and an interface circuit. Each memory die includes a wide I/O interface electrically coupled to another wide I/O interface of another memory die of the plurality of memory dies. The interface circuit is physically separate from the memory dies. The interface circuit includes a first interface and a second interface. The first interface comprises a wide I/O interface electrically coupled to a wide I/O interface of at least one of the memory dies of the plurality of memory dies. The second interface is a narrow I/O interface configured to communicate with an external circuit.

Abstract: A wide I/O semiconductor device is disclosed including a memory die stack wire bonded to an interface chip. The stack of memory die may be wire bonded to the interface chip using a wire bond scheme optimized for die-to-die connection and optimized for the large number of wire bond connections in a wide I/O semiconductor device. This method can achieve significant BW increase by improving packaging yield and costs, not possible with current packaging schemes.

Abstract: A controller (e.g., a memory controller) includes initial error analysis logic (e.g., a section of a Reed Solomon or BCH codeword decoder) that determines an error count for a data element. The data element may be data stored in the memory of a memory device (e.g., a flash memory device) that incorporates the controller. Comparison logic in the controller determines when the error count exceeds a power control threshold. When the error count exceeds the power control threshold, control logic in the controller reduces the operational speed of subsequent error analysis logic (e.g., a different section of the Reed Solomon or BCH codeword decoder) for the data element. For example, the subsequent error analysis logic may be error locator logic, such as Chien search logic, that determines where the errors exist in the data element.

Abstract: An extension of the serial/parallel Montgomery modular multiplication method with simultaneous reduction as previously implemented by the applicants, adapted innovatively to perform both in the prime number and in the GF(2q) polynomial based number field, in such a way as to simplify the flow of operands, by performing a multiple anticipatory function to enhance the previous modular multiplication procedures.

Abstract: An extension of the serial/parallel Montgomery modular multiplication method with simultaneous reduction as previously implemented by the applicants, adapted innovatively to perform both in the prime number and in the GF(2q) polynomial based number field, in such a way as to simplify the flow of operands, by performing a multiple anticipatory function to enhance the previous modular multiplication procedures.

Abstract: An extension of the serial/parallel Montgomery modular multiplication method with simultaneous reduction as previously implemented by the applicants, adapted innovatively to perform both in the prime number and in the GF(2q) polynomial based number field, in such a way as to simplify the flow of operands, by performing a multiple anticipatory function to enhance the previous modular multiplication procedures.

Abstract: This invention discloses apparatus and methods for accelerating processing, loading and unloading of data, from and to a plurality of memory addresses in a CPU having an accumulator, and to a memory-mapped coprocessing device for continuous integer computations.

Abstract: An extension of the serial/parallel Montgomery modular multiplication method with simultaneous reduction as previously implemented by the applicants, adapted innovatively to perform both in the prime number and in the GF(2q) polynomial based number field, in such a way as to simplify the flow of operands, by performing a multiple anticipatory function to enhance the previous modular multiplication procedures.