Patents by Inventor Michael Mutch

Michael Mutch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200075732
    Abstract: A method of forming a semiconductor structure includes forming a first material over a base material by vapor phase epitaxy. The first material has a crystalline portion and an amorphous portion. The amorphous portion of the first material is removed by abrasive planarization. At least a second material is formed by vapor phase epitaxy over the crystalline portion of first material. The second material has a crystalline portion and an amorphous portion. The amorphous portion of the second material is removed by abrasive planarization. A semiconductor structure formed by such a method includes the substrate, the first material, the second material, and optionally, an oxide material between the first material and the second material. The substrate, the first material, and the second material define a continuous crystalline structure. Semiconductor structures, memory devices, and systems are also disclosed.
    Type: Application
    Filed: September 5, 2018
    Publication date: March 5, 2020
    Inventors: Michael Mutch, Manuj Nahar
  • Publication number: 20200075330
    Abstract: A method includes forming a first amorphous material, forming a second amorphous material over and in contact with the first material, removing a portion of the second material and the first material to form pillars, and exposing the materials to a temperature between a crystallization temperature of the first material and a crystallization temperature of the second material. The first material and the second material each comprise at least one element selected from the group consisting of silicon and germanium. The second material exhibits a crystallization temperature different than a crystallization temperature of the first material. Semiconductor structures, memory devices, and systems are also disclosed.
    Type: Application
    Filed: September 5, 2018
    Publication date: March 5, 2020
    Inventors: Ashonita A. Chavan, Durai Vishak Nirmal Ramaswamy, Michael Mutch, Sameer Chhajed
  • Publication number: 20200075713
    Abstract: A method includes forming a semiconductor structure. The structure includes a first material, a blocking material, a second material in an amorphous form, and a third material in an amorphous form. The blocking material is disposed between the first material and the second material. At least the second material and the third material each comprise silicon and/or germanium. The structure is exposed to a temperature above a crystallization temperature of the third material and below a crystallization temperature of the second material. Semiconductor structures, memory devices, and systems are also disclosed.
    Type: Application
    Filed: September 5, 2018
    Publication date: March 5, 2020
    Inventors: Michael Mutch, Manuj Nahar, Wayne I. Kinney
  • Publication number: 20200066513
    Abstract: Some embodiments include a method of forming crystalline semiconductor material. A template is provided to have a polycrystalline region along a surface. Semiconductor material is deposited along the surface under conditions which grow crystalline semiconductor structures from grains of the polycrystalline region. The deposition is conducted at a temperature of less than or equal to 500° C. Some embodiments include a method of forming a transistor. A template is provided to have a polycrystalline region along a surface. Semiconductor material is deposited along the surface under conditions which grow crystalline semiconductor structures from grains of the polycrystalline region. The semiconductor material includes germanium. The crystalline semiconductor structures are doped to form a configuration having a first portion over a second portion. Insulative material is formed adjacent the second portion. A transistor gate is formed along the insulative material.
    Type: Application
    Filed: August 24, 2018
    Publication date: February 27, 2020
    Applicant: Micron Technology, Inc.
    Inventors: Manuj Nahar, Darwin Franseda Fan, Junting Liu-Norrod, Michael Mutch
  • Publication number: 20190185095
    Abstract: A dust plate mounted to a bicycle's downtube located in front of the chainring (crank) that reduces the amount of airborne particles from entering the drivetrain caused by the forward moving front tire while maintaining access to service the crank and/or chain.
    Type: Application
    Filed: December 19, 2017
    Publication date: June 20, 2019
    Inventor: Thomas Michael Mutch