Abstract: In a first aspect, a module is provided that is adapted to process a wafer. The module includes a processing portion having one or more features such as (1) a rotatable wafer support for rotating an input wafer from a first orientation wherein the wafer is in line with a load port to a second orientation wherein the wafer is in line with an unload port; (2) a catcher adapted to contact and travel passively with a wafer as it is unloaded from the processing portion; (3) an enclosed output portion adapted to create a laminar air flow from one side thereof to the other; (4) an output portion having a plurality of wafer receivers; (5) submerged fluid nozzles; and/or (6) drying gas flow deflectors, etc. Other aspects include methods of wafer processing.

Abstract: In a first aspect, a first method of drying a substrate is provided. The first method includes the steps of (1) lifting a substrate through an air/fluid interface at a first rate; (2) directing a drying vapor at the air/fluid interface during lifting of the substrate; and (3) while a portion of the substrate remains in the air/fluid interface, reducing a rate at which a remainder of the substrate is lifted through the air/fluid interface to a second rate. The drying vapor may form an angle of about 23° with the air/fluid interface and/or the second rate may be about 2.5 mm/sec.

Abstract: In a scrubber adapted to clean a semiconductor wafer, the torque of a brush rotation motor is monitored while a scrubber brush is in contact with the wafer and is being rotated by the motor. The position of the brush relative to the wafer may be adjusted based on the monitored torque to regulate the pressure applied to the wafer by the brush. Open loop positioning or closed loop control may be employed.

Abstract: In a scrubber adapted to clean a semiconductor wafer, the torque of a brush rotation motor is monitored while a scrubber brush is in contact with the wafer and is being rotated by the motor. The position of the brush relative to the wafer may be adjusted based on the monitored torque to regulate the pressure applied to the wafer by the brush. Open loop positioning or closed loop control may be employed.

Abstract: In a scrubber adapted to clean a semiconductor wafer, the torque of a brush rotation motor is monitored while a scrubber brush is in contact with the wafer and is being rotated by the motor. The position of the brush relative to the wafer may be adjusted based on the monitored torque to regulate the pressure applied to the wafer by the brush. Open loop positioning or closed loop control may be employed.

Abstract: An electro-chemical plating system is described. A method is performed by the electro-chemical plating system in which a seed layer formed on a substrate is immersed into an electrolyte solution. In one aspect, a substrate is immersed in the electrochemical plating system by tilting the substrate as it enters the electrolyte solution to limit the trapping or formation of air bubbles in the electrolyte solution between the substrate and the substrate holder. In another aspect, an apparatus is provided for electroplating that comprises a cell, a substrate holder, and an actuator. The actuator can displace the substrate holder assembly in the x and z directions and also tilt the substrate. In another aspect, a method is provided of driving a meniscus formed by electrolyte solution across a surface of a substrate. The method comprises enhancing the interaction between the electrolyte solution meniscus and the surface as the substrate is immersed into the electrolyte solution.

Abstract: An electroplating system that includes a wet area comprising one or more electrochemical processing cells for processing one or more semiconductor substrates in an electrolyte solution, a dry area for transferring the semiconductor substrates to the wet area prior to processing the semiconductor substrates and for receiving the semiconductor substrates from the wet area after processing the semiconductor substrates, and a cleaning module for removing unwanted deposits from the semiconductor substrates after processing the semiconductor substrates in the wet area but prior to transferring the semiconductor substrates to the dry area.

Abstract: An electro-chemical plating system is described. A method is performed by the electro-chemical plating system in which a seed layer formed on a substrate is immersed into an electrolyte solution. In one aspect, a substrate is immersed in the electrochemical plating system by tilting the substrate as it enters the electrolyte solution to limit the trapping or formation of air bubbles in the electrolyte solution between the substrate and the substrate holder. In another aspect, an apparatus is provided for electroplating that comprises a cell, a substrate holder, and an actuator. The actuator can displace the substrate holder assembly in the x and z directions and also tilt the substrate. In another aspect, a method is provided of driving a meniscus formed by electrolyte solution across a surface of a substrate. The method comprises enhancing the interaction between the electrolyte solution meniscus and the surface as the substrate is immersed into the electrolyte solution.

Abstract: In a scrubber adapted to clean a semiconductor wafer, the torque of a brush rotation motor is monitored while a scrubber brush is in contact with the wafer and is being rotated by the motor. The position of the brush relative to the wafer may be adjusted based on the monitored torque to regulate the pressure applied to the wafer by the brush. Open loop positioning or closed loop control may be employed.

Abstract: A method and apparatus for processing a substrate is described. In one aspect, a processing system is provided which includes a wet area and a dry area. In another aspect, a method comprises processing the substrate in the process cell. The substrate is transferred from the process cell to a dry module and then transferring the substrate to a drying area.

Abstract: A method and apparatus for reducing the thermal gradients within substrate support such as a ceramic wafer support pedestal. Specifically, the present invention is a heater controller that limits the amount of power that is applied to a resistive heater embedded within a ceramic pedestal. The heater controller comprises the necessary circuitry for limiting the amount of power applied to one or more zones with respect to a single other zone. Said heater controller also contains the necessary circuitry to detect faulty or misconnected wires between heater controller and the zones to be heated.

Abstract: A system for polishing a semiconductor substrate. Specifically, the system includes one or more polishing modules and a cleaning module. A rail is disposed between the polishing modules and the cleaning module. The rail has a first end disposed proximate a transfer station disposed on the polishing module and a second end disposed proximate the cleaning module. A robot is movably disposed on the rail. The robot is adapted to transfer a substrate between the transfer station and the cleaning module. Additional embodiments of the invention include having the cleaning module in an orientation perpendicular to an orientation of the rail and having the cleaning module in an orientation perpendicular to an orientation of the rail.

Abstract: A conductive feed-through providing a conductive path through a dielectric body while maintaining differences in pressure between volumes separated by the dielectric body. A conductive feed-through of the present invention employs a hollow conductive tube created by first drilling a bore through the dielectric material. A first electrode is used to cover one end of the bore, and a vacuum-tight seal is formed around this first electrode. A second electrode is attached to the dielectric body at the other end of the bore. The inside surface of the bore is then coated with an electrically conductive material, and the coating provides a conductive path between the first electrode and the second electrode. In an alternative embodiment, the electrically conductive material coating is deposited such that it extends over the surface of the dielectric body so as to function as an electrode as well.

Abstract: A cathode assembly having a pedestal and a detachable susceptor. Various contact assemblies containing a canted spring are utilized to make electrical connection between the pedestal and detachable susceptor. The canted spring has coils that are tilted in one direction and joined end to end to form a doughnut shape. Such a spring creates multiple parallel self-loading electrical connections via the turns of the spring. The turns act like electrical wires to ensure reliable RF electrical energy transfer. The canted spring contact of the present invention allows for flat contact between the pedestal and the chuck.

Abstract: Apparatus for biasing and retaining a wafer in a semiconductor wafer processing system. The apparatus has a pedestal, a puck and an electrode disposed between the pedestal and the puck. The pedestal defines an enclosure within which the electrode and other pedestal components are housed. The electrode may serve as a cooling plate for the puck. Each of the components is insulated so as to define an electrical path. The electrical path consists of a conductor connected to a coolant tube inside the enclosure and the cooling plate which is in contact with the coolant tube. The cooling plate is electrically isolated from the pedestal via an isolator ring that circumscribes an upper inner wall of the enclosure. The coolant tube is disposed in a channel on the bottomside of the cooling plate and affixed to the plate so as to establish physical contact. The coolant tube and plate conduct RF power from a power source connected to the tube.

Abstract: A wafer spacing mask for supporting a workpiece in a spaced apart relation to a workpiece support chuck. More specifically, the wafer spacing mask contains a plurality of metallic support members deposited upon the support surface of the chuck. The support members maintain a wafer, or other workpiece, in a spaced apart relation to the support surface of the chuck. The distance between the underside surface of the wafer and the chuck is defined by the thickness of the support members. This distance should be larger than the expected diameter of contaminant particles that may lie on the surface of the chuck. In this manner, the contaminant particles do not adhere to the underside of the wafer during processing.

Abstract: A combined wafer support and thermocouple assembly comprising a wafer support basket having a plurality of wafer support fingers, one of which includes a low mass, low heat constant support for supporting a thermocouple against the backside of a wafer positioned on the basket.

Abstract: A combined wafer support and thermocouple assembly comprising a wafer support basket having a plurality of wafer support fingers, one of which includes a low mass, low heat constant support for supporting a thermocouple against the backside of a wafer positioned on the basket.

Abstract: A method and apparatus are described for inhibiting visual obstruction of the window of a semiconductor etch process chamber by deposition of each byproducts thereon by selectively heating the window surfaces adjacent one edge of the window to thereby form a cool region on the window surfaces adjacent the opposite edge of the window whereby the center of the window will remain substantially clear of such depositions. The apparatus for carrying out the method of the invention comprises a first heat transmitting structure disposed on one surface of an optically transparent window adjacent one edge, and a second heat transmitting structure disposed on the opposite surface of the optically transparent window adjacent the same edge to thereby provide even heating of both surfaces of the window adjacent the one edge, thereby creating a cooler zone on the window surfaces adjacent the opposite edge of the window.