Abstract: Embodiments of the invention relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and a system for implementing arrangements of magnetic field generators configured to facilitate physical vapor deposition (“PVD”) and/or controlling impedance matching associated with a non-metal-based plasma used to modify a non-metal film, such as a chalcogenide-based film.

Abstract: Embodiments of the invention relate generally to semiconductor device fabrication and processes, and more particularly, to methods for implementing arrangements of magnetic field generators configured to facilitate physical vapor deposition (“PVD”) and/or for controlling impedance matching associated with a non-metal-based plasma used to modify a non-metal film, such as a chalcogenide-based film.

Abstract: Embodiments of the invention relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and a system for implementing arrangements of magnetic field generators configured to facilitate physical vapor deposition (“PVD”) and/or controlling impedance matching associated with a non-metal-based plasma used to modify a non-metal film, such as a chalcogenide-based film.

Abstract: Embodiments of the invention relate generally to semiconductor device fabrication and processes, and more particularly, to methods for implementing arrangements of magnetic field generators configured to facilitate physical vapor deposition (“PVD”) and/or for controlling impedance matching associated with a non-metal-based plasma used to modify a non-metal film, such as a chalcogenide-based film.

Abstract: Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and a system that regulates the amount of thermal energy in a semiconductor processing chamber during semiconductor device fabrication and processes. In one embodiment, an apparatus includes a cavity environment controller and a pedestal temperature controller coupled to a semiconductor processing chamber. The pedestal temperature controller is configured to regulate the temperature of the semiconductor processing chamber through a pedestal disposed at the bottom of the semiconductor processing chamber.

Abstract: Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and a system that regulates the amount of thermal energy in a semiconductor processing chamber during semiconductor device fabrication and processes. In one embodiment, an apparatus includes a cavity environment controller and a pedestal temperature controller coupled to a semiconductor processing chamber. The cavity environment controller is configured to regulate the temperature of the semiconductor processing chamber through a fluid in a source cavity disposed at the top of the semiconductor processing chamber.

Abstract: Embodiments of the invention relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and a system for implementing arrangements of magnetic field generators configured to facilitate physical vapor deposition (“PVD”) and/or controlling impedance matching associated with a non-metal-based plasma used to modify a non-metal film, such as a chalcogenide-based film.

Abstract: Embodiments of the invention relate generally to semiconductor device fabrication and processes, and more particularly, to methods for implementing arrangements of magnetic field generators configured to facilitate physical vapor deposition (“PVD”) and/or for controlling impedance matching associated with a non-metal-based plasma used to modify a non-metal film, such as a chalcogenide-based film.

Abstract: Thermoplastic molding compositions comprise A) from 5 to 96% by weight of a polyester, B) from 1 to 30% by weight of a phosphinate of formula I and/or of a diphosphinate of formula II and/or polymers of these  where: R1 and R2 are linear or branched C1-C6-alkyl, phenyl or hydrogen, R3 is linear or branched C1-C10-alkylene, arylene, alkylarylene or arylalkylene, M is an alkaline-earth or alkali metal, Zn, Al, Fe or B, m is an integer from 1 to 3, n is an integer from 1 to 3, is 1 or 2 and C) from 1 to 30% by weight of at least one organic phosphorus-containing flame retardant, D) from 0 to 5% by weight of at least one ester or amide of saturated or unsaturated aliphatic carboxylic acids having from 10 to 40 carbon atoms with saturated aliphatic alcohols or amines having from 2 to 40 carbon atoms, and E) from 0 to 60% by weight of other additives, where the total of the percentages by weight of components A) to E) is 100%.

Abstract: Glycerol fatty acid esters of C12-C24 fatty acids which may have one hydroxyl group and from 1 to 3 carbon-carbon double bonds are used as an additive for molding compositions based on poly-C2-C6-alkylene terephthalates. The thermoplastic molding composition comprises, based on the total of components A and B and, if present, C to E, which together give 100 % by weight, a) as component A, from 40 to 99.99% by weight of at least one polyester based on poly-C2-C6-alkylene terephthalates, b) as component B, from 0.01 to 3% by weight of glycerol fatty acid esters of C12-C24 fatty acids which may have a hydroxyl group and from 1 to 3 carbon-carbon double bonds, c) as component C, from 0 to 49.99% by weight of blend polymers miscible with component A or dispersible therein, d) as component D, from 0 to 50% by weight of fillers, and e) as component E, from 0 to 10% by weight of other usual additives.

Abstract: Thermoplastic molding compositions comprise A) from 30 to 96% by weight of a polyester B) from 1 to 30% by weight of melamine cyanurate C) from 1 to 30% by weight of at least one phosphorus-containing flame retardant D) from 0.01 to 5% by weight of at least one ester or amide derived from a saturated or unsaturated aliphatic carboxylic acid having from 10 to 40 carbon atoms and a saturated aliphatic alcohol or &mine having from 2 to 40 carbon atoms E) from 0 to 60% by weight of other additives and processing aids where the total of the percentages by weight of components A) to E) is 100%.

Abstract: Thermoplastic molding compositions comprise A) from 5 to 96% by weight of a polyester, B) from 1 to 30% by weight of a nitrogen compound, excluding melamine cyanurate, C) from 0.1 to 30% by weight of a phosphinate of formula I or of a diphosphinate of formula II or of polymers of these or mixtures of these  as defined in the specification D) from 0 to 5% by weight of at least one ester or amide of saturated or unsaturated aliphatic carboxylic acids having from 10 to 40 carbon atoms with saturated aliphatic alcohols or amines having from 2 to 40 carbon atoms, and E) from 0 to 60% by weight of other additives, where the total of the percentages by weight of components A) to E) is 100%.

Abstract: The present disclosure pertains to our discovery that depositing various film layers in a particular order using a combination of Ion Metal Plasma (IMP) and traditional sputter deposition techniques with specific process conditions results in a barrier layer structure which provides excellent barrier properties and allows for metal/conductor filling of contact sizes down to 0.25 micron and smaller without junction spiking. Specifically, the film layers are deposited on a substrate in the following order: (a) a first layer of a barrier metal (M), deposited by IMP sputter deposition; (b) a second layer of an oxygen-stuffed barrier metal (MOx), an oxygen-stuffed nitride of a barrier metal (MNOx), or a combination thereof; (c) a third layer of a nitride of a barrier metal (MNx), deposited by IMP sputter deposition of the barrier metal in the presence of nitrogen; and (d) a fourth, wetting layer of a barrier metal, deposited by traditional sputter deposition.

Abstract: The present disclosure pertains to our discovery that depositing various film layers in a particular order using a combination of Ion Metal Plasma (IMP) and traditional sputter deposition techniques with specific process conditions results in a barrier layer structure which provides excellent barrier properties and allows for metal/conductor filling of contact sizes down to 0.25 micron and smaller without junction spiking. Specifically, the film layers are deposited on a substrate in the following order: (a) a first layer of a barrier metal (M), deposited by IMP sputter deposition; (b) a second layer of an oxygen-stuffed barrier metal (MOx), an oxygen-stuffed nitride of a barrier metal (MNOx), or a combination thereof; (c) a third layer of a nitride of a barrier metal (MN.sub.x), deposited by IMP sputter deposition of the barrier metal in the presence of nitrogen; and (d) a fourth, wetting layer of a barrier metal, deposited by traditional sputter deposition.