Patents by Inventor Michael Nicolas Albert Tran

Michael Nicolas Albert Tran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetic random access memory structures, integrated circuits, and methods for fabricating the same
    Patent number: 10516096
    Abstract: Spin transfer torque magnetic random access memory structures, integrated circuits, and methods for fabricating integrated circuits are provided. An exemplary spin transfer torque magnetic random access memory structure has a perpendicular magnetic orientation, and includes a bottom electrode and a base layer over the bottom electrode. The base layer includes a seed layer and a roughness suppression layer. The spin transfer torque magnetic random access memory structure further includes a hard layer over the base layer. Also, the spin transfer torque magnetic random access memory structure includes a magnetic tunnel junction (MTJ) element with a perpendicular orientation over the hard layer and a top electrode over the MTJ element.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: December 24, 2019
    Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Taiebeh Tahmasebi, Dimitri Houssameddine, Chenchen Wang, Michael Nicolas Albert Tran
  • Integrated circuits with magnetic tunnel junctions and methods of producing the same
    Patent number: 10468171
    Abstract: Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction stack. The magnetic tunnel junction stack includes a seed layer, first and second pinned layers, and a coupling layer. The seed layer includes holmium. The first pinned layer overlies the seed layer, where the first pinned layer is magnetic, and the non-magnetic coupling layer overlies the first pinned layer. The second pinned layer overlies the coupling layer, where the second pinned layer is also magnetic.
    Type: Grant
    Filed: June 27, 2018
    Date of Patent: November 5, 2019
    Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Wai Cheung Law, Taiebeh Tahmasebi, Dimitri Houssameddine, Michael Nicolas Albert Tran, Chim Seng Seet, Kai Hung Alex See, Wen Siang Lew
  • Magnetic random access memory structures, integrated circuits, and methods for fabricating the same
    Patent number: 10446205
    Abstract: Spin transfer torque magnetic random access memory structures, integrated circuits, and methods for fabricating integrated circuits are provided. An exemplary spin transfer torque magnetic random access memory structure has a perpendicular magnetic orientation, and includes a bottom electrode, a seed layer over the bottom electrode, a hard layer over the seed layer, a magnetically continuous transition layer over the hard layer, a reference layer over the magnetically continuous transition layer, a tunnel barrier layer over the reference layer, a storage layer formed over the tunnel barrier layer, and a top electrode. The reference layer, the tunnel barrier layer, and the storage layer form a magnetic tunnel junction (MTJ) element with a perpendicular orientation.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: October 15, 2019
    Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Taiebeh Tahmasebi, Dimitri Houssameddine, Michael Nicolas Albert Tran, Chenchen Jacob Wang
  • MAGNETIC RANDOM ACCESS MEMORY STRUCTURES, INTEGRATED CIRCUITS, AND METHODS FOR FABRICATING THE SAME
    Publication number: 20190304522
    Abstract: Spin transfer torque magnetic random access memory structures, integrated circuits, and methods for fabricating integrated circuits are provided. An exemplary spin transfer torque magnetic random access memory structure has a perpendicular magnetic orientation, and includes a bottom electrode, a seed layer over the bottom electrode, a hard layer over the seed layer, a magnetically continuous transition layer over the hard layer, a reference layer over the magnetically continuous transition layer, a tunnel barrier layer over the reference layer, a storage layer formed over the tunnel barrier layer, and a top electrode. The reference layer, the tunnel barrier layer, and the storage layer form a magnetic tunnel junction (MTJ) element with a perpendicular orientation.
    Type: Application
    Filed: March 28, 2018
    Publication date: October 3, 2019
    Inventors: Taiebeh Tahmasebi, Dimitri Houssameddine, Michael Nicolas Albert Tran, Chenchen Jacob Wang
  • MAGNETIC RANDOM ACCESS MEMORY STRUCTURES, INTEGRATED CIRCUITS, AND METHODS FOR FABRICATING THE SAME
    Publication number: 20190305210
    Abstract: Spin transfer torque magnetic random access memory structures, integrated circuits, and methods for fabricating integrated circuits are provided. An exemplary spin transfer torque magnetic random access memory structure has a perpendicular magnetic orientation, and includes a bottom electrode and a base layer over the bottom electrode. The base layer includes a seed layer and a roughness suppression layer. The spin transfer torque magnetic random access memory structure further includes a hard layer over the base layer. Also, the spin transfer torque magnetic random access memory structure includes a magnetic tunnel junction (MTJ) element with a perpendicular orientation over the hard layer and a top electrode over the MTJ element.
    Type: Application
    Filed: March 28, 2018
    Publication date: October 3, 2019
    Inventors: Taiebeh Tahmasebi, Dimitri Houssameddine, Chenchen Wang, Michael Nicolas Albert Tran