Abstract: A modular power distribution system includes using power extension modules and power distribution modules. The power extension modules are configured to route inputted power to another power extension module or a power distribution module. The power distribution modules are configured to route power from a power extension module to one or more racks or cabinets in a data center.

Abstract: Dynamic timers are determined using machine learning. The timers are used to control the amount of time that new data transaction requests wait before being processed by a data transaction processing system. The timers are adjusted based on changing conditions within the data transaction processing system. The dynamic timers may be determined using machine learning inference based on feature values calculated as a result of the changing conditions.

Abstract: Dynamic timers are determined using machine learning. The timers are used to control the amount of time that new data transaction requests wait before being processed by a data transaction processing system. The timers are adjusted based on changing conditions within the data transaction processing system. The dynamic timers may be determined using machine learning inference based on feature values calculated as a result of the changing conditions.

Abstract: A process module for a substrate processing tool includes a plurality of processing stations each configured to perform a process on a substrate and a mechanical indexer arranged within the process module. The mechanical indexer includes a plurality of end effectors including at least a first end effector, a second end effector, and a third end effector. Each of the plurality of end effectors extends in a radial direction from a central axis of the mechanical indexer and is configured to rotate about the central axis within the process module. The mechanical indexer is configured to position each of the plurality of end effectors at any one of the plurality of processing stations within the process module. The mechanical indexer is configured to position more than one of the plurality of end effectors at a same one of the plurality of processing stations at a same time.

Abstract: A system comprises an equipment front end module (EFEM), a vacuum transfer module (VTM), a plurality off quad station process modules (QSMs). The EFEM is configured to receive a plurality of wafers. The EFEM comprises an EFEM transfer robot. The vacuum transfer module (VTM) is configured to receive the plurality of wafers from the EFEM. The VTM comprises a VTM transfer robot. The plurality of quad station process modules (QSMs) is coupled to the VTM. The VTM transfer robot is configured to transfer wafers between the VTM and the plurality of QSMs. The EFEM transfer robot is configured to transfer wafers between the EFEM and the VTM.

Abstract: A mechanical indexer for a substrate processing tool includes first and second arms each having first and second end effectors. The first arm is configured to rotate on a first spindle to selectively position the first end effector of the first arm at a plurality of processing stations of the substrate processing tool and selectively position the second end effector of the first arm at the plurality of processing stations of the substrate processing tool. The second arm is configured to rotate on a second spindle to selectively position the first end effector of the second arm at the plurality of processing stations of the substrate processing tool and selectively position the second end effector of the second arm at the plurality of processing stations of the substrate processing tool. The first arm is configured to rotate independently of the second arm.

Abstract: A mechanical indexer for a substrate processing tool includes first and second arms each having first and second end effectors. The first arm is configured to rotate on a first spindle to selectively position the first end effector of the first arm at a plurality of processing stations of the substrate processing tool and selectively position the second end effector of the first arm at the plurality of processing stations of the substrate processing tool. The second arm is configured to rotate on a second spindle to selectively position the first end effector of the second arm at the plurality of processing stations of the substrate processing tool and selectively position the second end effector of the second arm at the plurality of processing stations of the substrate processing tool. The first arm is configured to rotate independently of the second arm.

Abstract: Methods and apparatuses that decouple wafer temperature from pre-heat station residence time, thereby improving wafer-to-wafer temperature uniformity, are provided. The methods involve maintaining a desired temperature by varying the distance between the wafer and a heater. In certain embodiments, the methods involve rapidly approaching a predetermined initial distance and then obtaining and maintaining a desired final temperature using closed loop temperature control. In certain embodiments, a heated pedestal supplies the heat. The wafer-pedestal gap may be modulated may be varied by moving the heated pedestal and/or moving the wafer, e.g., via a movable wafer support. Also in certain embodiments, the closed loop control system includes a real time wafer temperature sensor and a servo controlled linear motor for moving the pedestal or wafer support.

Abstract: A semiconductor processing tool heats wafers using radiant heat and resistive heat in chamber or in a load lock where pressure changes. The wafers are heated in greater part with a resistive heat source until a transition temperature or pressure is reached, then they are heated in greater part with a radiant heat source. Throughput improves for the tool because of the wafers can reach a high temperature uniformly in seconds.

Abstract: Methods and apparatuses that decouple wafer temperature from pre-heat station residence time, thereby improving wafer-to-wafer temperature uniformity, are provided. The methods involve maintaining a desired temperature by varying the distance between the wafer and a heater. In certain embodiments, the methods involve rapidly approaching a predetermined initial distance and then obtaining and maintaining a desired final temperature using closed loop temperature control. In certain embodiments, a heated pedestal supplies the heat. The wafer-pedestal gap may be modulated may be varied by moving the heated pedestal and/or moving the wafer, e.g., via a movable wafer support. Also in certain embodiments, the closed loop control system includes a real time wafer temperature sensor and a servo controlled linear motor for moving the pedestal or wafer support.

Abstract: A semiconductor processing tool heats wafers using radiant heat and resistive heat in chamber or in a load lock where pressure changes. The wafers are heated in greater part with a resistive heat source until a transition temperature or pressure is reached, then they are heated in greater part with a radiant heat source. Throughput improves for the tool because of the wafers can reach a high temperature uniformly in seconds.