Abstract: A process module for a substrate processing tool includes a plurality of processing stations each configured to perform a process on a substrate and a mechanical indexer arranged within the process module. The mechanical indexer includes a plurality of end effectors including at least a first end effector, a second end effector, and a third end effector. Each of the plurality of end effectors extends in a radial direction from a central axis of the mechanical indexer and is configured to rotate about the central axis within the process module. The mechanical indexer is configured to position each of the plurality of end effectors at any one of the plurality of processing stations within the process module. The mechanical indexer is configured to position more than one of the plurality of end effectors at a same one of the plurality of processing stations at a same time.

Abstract: A system comprises an equipment front end module (EFEM), a vacuum transfer module (VTM), a plurality off quad station process modules (QSMs). The EFEM is configured to receive a plurality of wafers. The EFEM comprises an EFEM transfer robot. The vacuum transfer module (VTM) is configured to receive the plurality of wafers from the EFEM. The VTM comprises a VTM transfer robot. The plurality of quad station process modules (QSMs) is coupled to the VTM. The VTM transfer robot is configured Oto transfer wafers between the VTM and the plurality of QSMs. The EFEM transfer robot is configured to transfer wafers between the EFEM and the VTM.

Abstract: A substrate processing tool includes: a first processing module; a vacuum transfer module connected to the first processing module; one or more pumps; a backfill source; and one or more controllers. The one or more controllers are configured to: control the one or more pumps to reduce a chamber pressure in the vacuum transfer module from a first chamber pressure to a second chamber pressure and then backfill the vacuum transfer module with an inert gas to a third chamber pressure prior to permitting transfer of a substrate into the first processing module; subsequent to backfilling the vacuum transfer module, cause a transfer of the substrate from the vacuum transfer module to the first processing module; and cause the first processing module to process the substrate.

Abstract: A process module for a substrate processing tool includes a plurality of processing stations each configured to perform a process on a substrate and a mechanical indexer arranged within the process module. The mechanical indexer includes a plurality of end effectors including at least a first end effector, a second end effector, and a third end effector. Each of the plurality of end effectors extends in a radial direction from a central axis of the mechanical indexer and is configured to rotate about the central axis within the process module. The mechanical indexer is configured to position each of the plurality of end effectors at any one of the plurality of processing stations within the process module. The mechanical indexer is configured to position more than one of the plurality of end effectors at a same one of the plurality of processing stations at a same time.

Abstract: A system comprises an equipment front end module (EFEM), a vacuum transfer module (VTM), a plurality off quad station process modules (QSMs). The EFEM is configured to receive a plurality of wafers. The EFEM comprises an EFEM transfer robot. The vacuum transfer module (VTM) is configured to receive the plurality of wafers from the EFEM. The VTM comprises a VTM transfer robot. The plurality of quad station process modules (QSMs) is coupled to the VTM. The VTM transfer robot is configured to transfer wafers between the VTM and the plurality of QSMs. The EFEM transfer robot is configured to transfer wafers between the EFEM and the VTM.

Abstract: A mechanical indexer for a substrate processing tool includes first and second arms each having first and second end effectors. The first arm is configured to rotate on a first spindle to selectively position the first end effector of the first arm at a plurality of processing stations of the substrate processing tool and selectively position the second end effector of the first arm at the plurality of processing stations of the substrate processing tool. The second arm is configured to rotate on a second spindle to selectively position the first end effector of the second arm at the plurality of processing stations of the substrate processing tool and selectively position the second end effector of the second arm at the plurality of processing stations of the substrate processing tool. The first arm is configured to rotate independently of the second arm.

Abstract: A mechanical indexer for a substrate processing tool includes first and second arms each having first and second end effectors. The first arm is configured to rotate on a first spindle to selectively position the first end effector of the first arm at a plurality of processing stations of the substrate processing tool and selectively position the second end effector of the first arm at the plurality of processing stations of the substrate processing tool. The second arm is configured to rotate on a second spindle to selectively position the first end effector of the second arm at the plurality of processing stations of the substrate processing tool and selectively position the second end effector of the second arm at the plurality of processing stations of the substrate processing tool. The first arm is configured to rotate independently of the second arm.

Abstract: Methods and apparatuses that decouple wafer temperature from pre-heat station residence time, thereby improving wafer-to-wafer temperature uniformity, are provided. The methods involve maintaining a desired temperature by varying the distance between the wafer and a heater. In certain embodiments, the methods involve rapidly approaching a predetermined initial distance and then obtaining and maintaining a desired final temperature using closed loop temperature control. In certain embodiments, a heated pedestal supplies the heat. The wafer-pedestal gap may be modulated may be varied by moving the heated pedestal and/or moving the wafer, e.g., via a movable wafer support. Also in certain embodiments, the closed loop control system includes a real time wafer temperature sensor and a servo controlled linear motor for moving the pedestal or wafer support.

Abstract: A semiconductor processing tool heats wafers using radiant heat and resistive heat in chamber or in a load lock where pressure changes. The wafers are heated in greater part with a resistive heat source until a transition temperature or pressure is reached, then they are heated in greater part with a radiant heat source. Throughput improves for the tool because of the wafers can reach a high temperature uniformly in seconds.

Abstract: Methods and apparatuses that decouple wafer temperature from pre-heat station residence time, thereby improving wafer-to-wafer temperature uniformity, are provided. The methods involve maintaining a desired temperature by varying the distance between the wafer and a heater. In certain embodiments, the methods involve rapidly approaching a predetermined initial distance and then obtaining and maintaining a desired final temperature using closed loop temperature control. In certain embodiments, a heated pedestal supplies the heat. The wafer-pedestal gap may be modulated may be varied by moving the heated pedestal and/or moving the wafer, e.g., via a movable wafer support. Also in certain embodiments, the closed loop control system includes a real time wafer temperature sensor and a servo controlled linear motor for moving the pedestal or wafer support.

Abstract: A semiconductor processing tool heats wafers using radiant heat and resistive heat in chamber or in a load lock where pressure changes. The wafers are heated in greater part with a resistive heat source until a transition temperature or pressure is reached, then they are heated in greater part with a radiant heat source. Throughput improves for the tool because of the wafers can reach a high temperature uniformly in seconds.