Abstract: An indexing stunt selector for a toy vehicle track set is provided. The indexing stunt selector may be disposed along a toy vehicle track and includes a first stunt element disposed in the vehicle pathway to cause a toy vehicle to perform a first stunt, where performance of a first stunt results in actuation of a first stunt trigger. The indexing stunt selector further includes a second stunt element adapted to be automatically disposed in the vehicle pathway following actuation of the first stunt trigger.

Abstract: A nebulizer for efficiently and reliably delivering aerosolized fluid to an inhaling patient is disclosed. The nebulizer, in one embodiment, includes a fluid channel air inlet and fluid channel air inlet valve responsive to either a manual force external of the nebulizer, or a patient's breathing, to begin the nebulization process. The nebulizer also includes a fluid return channel to a fluid source, such as a removable vial, containing fluid to be aerosolized.

Abstract: An expansion device is provided for expanding the functionality of a mobile electronic device while in a mobile mode and/or in a desktop mode. The expansion device may be a media slice that provides multimedia functionality to a mobile electronic device. The media slice may be configured to receive an electromechanical interface from the mobile electronic device and to replicate the electromechanical interface for connecting to another expansion device, such as to a docking station or a port replicator. The expansion device and the mobile electronic device may be connected via a latch mechanism that easily couples and de-couples the devices. An expansion system is also provided that includes a support stand for providing orientation and support features for a computing device and/or an expansion device.

Abstract: An expansion device is provided for expanding the functionality of a mobile electronic device while in a mobile mode and/or in a desktop mode. The expansion device may be a media slice that provides multimedia functionality to a mobile electronic device. The media slice may be configured to receive an electromechanical interface from the mobile electronic device and to replicate the electromechanical interface for connecting to another expansion device, such as to a docking station or a port replicator. The expansion device and the mobile electronic device may be connected via a latch mechanism that easily couples and de-couples the devices. An expansion system is also provided that includes a support stand for providing orientation and support features for a computing device and/or an expansion device.

Abstract: A method of selectively forming contact regions on a substrate having a plurality of exposed regions includes selectively forming a contact region on each of the exposed regions of the substrate. During formation, each contact region has a first growth rate in a first direction and a second growth rate in a second direction. While each contact region is being selectively formed on the respective exposed region, the contact region is heated to increase the first growth rate of the contact region in the first direction relative to the second growth rate of the contact region in the second direction. The first growth rate may be a vertical growth rate and the second growth rate may be a lateral growth rate. The contact may be heated by applying electromagnetic radiation to an upper surface of the substrate and not applying the radiation to the vertical portions of the contact region to thereby increase the vertical growth rate relative to the lateral growth rate.

Abstract: Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.

Abstract: A peak flow meter is described with a body having a sample channel and at least one bypass channel. One of at least two flow range scales may be selected using a flow range selector to adjust the sensitivity of the peak flow meter. A flow range selection indicator provides visual reference as to which flow range scale has been selected. A peak flow calculator used in cooperation with zone indicators on the peak flow meter permits a user to customize the peak flow meter for that user's predicted personal best exhalation range.

Abstract: Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.

Abstract: An expansion device is provided for expanding the functionality of a mobile electronic device while in a mobile mode and/or in a desktop mode. The expansion device may be a media slice that provides multimedia functionality to a mobile electronic device. The media slice may be configured to receive an electromechanical interface from the mobile electronic device and to replicate the electromechanical interface for connecting to another expansion device, such as to a docking station or a port replicator. The expansion device and the mobile electronic device may be connected via a latch mechanism that easily couples and de-couples the devices. An expansion system is also provided that includes a support stand for providing orientation and support features for a computing device and/or an expansion device.

Abstract: A dielectric insulating composite for insulating a floating gate from a control gate in a non-volatile memory is described. A material, such as an undoped polysilicon, amorphous silicon, or amorphous polysilicon or a silicon rich nitride, is inserted in the gate structure. The oxide film that results from the oxidation of these films is relatively free from impurities. As a result, charge leakage between the floating gate and control gate is reduced.

Abstract: In but one aspect of the invention, a method of depositing polysilicon comprises providing a substrate within a chemical vapor deposition reactor, with the substrate having an exposed substantially crystalline region and an exposed substantially amorphous region. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor under conditions effective to substantially selectively deposit polysilicon on the crystalline region and not the amorphous region. In another aspect a method of fabricating a field effect transistor on a substrate comprises forming a gate dielectric layer and a gate over semiconductive material. Doped source/drain regions are formed within semiconductive material laterally proximate the gate. Substantially amorphous insulating material is formed over and laterally proximate the gate. The substrate is provided within a chemical vapor deposition reactor.

Abstract: Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.

Abstract: Disclosed is a toy, comprising of rotating means for collecting and dispersing an item and power means coupled to said rotating means, said power means powering said rotating means at a first speed in a first direction to collect said toy, and powering said rotating means at a second speed in a second direction to disperse said toy, said first speed different from said second speed, and said first direction different from said second direction.

Abstract: A dielectric insulating composite for insulating a floating gate from a control gate in a non-volatile memory is described. A material, such as an undoped polysilicon, amorphous silicon, or amorphous polysilicon or a silicon rich nitride, is inserted in the gate structure. The oxide film that results from the oxidation of these films is relatively free from impurities. As a result, charge leakage between the floating gate and control gate is reduced.

Abstract: A method of forming a capacitor includes forming a first capacitor electrode over a substrate. A substantially crystalline capacitor dielectric layer is formed over the first capacitor electrode. The substrate with the substantially crystalline capacitor dielectric layer is provided within a chemical vapor deposition reactor. Such substrate has an exposed substantially amorphous material. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor under conditions effective to substantially selectively deposit polysilicon on the substantially crystalline capacitor dielectric layer relative to the exposed substantially amorphous material, and the polysilicon is formed into a second capacitor electrode.

Abstract: A method of depositing polysilicon includes positioning a substrate within a chemical vapor deposition reactor. The substrate has an exposed substantially crystalline region and an exposed substantially amorphous region. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor to provide a reactive atmosphere under conditions effective to substantially selectively deposit polysilicon on the crystalline region relative to the amorphous region. The reactive atmosphere during the depositing consists essentially of a gaseous silane precursor.

Abstract: A nebulizer for efficiently and reliably delivering aerosolized fluid to an inhaling patient is disclosed. The nebulizer, in one embodiment, includes a fluid channel air inlet and fluid channel air inlet valve responsive to either a manual force external of the nebulizer, or a patient's breathing, to begin the nebulization process. The nebulizer also includes a fluid return channel to a fluid source, such as a removable vial, containing fluid to be aerosolized.

Abstract: A dielectric insulating composite for insulating a floating gate from a control gate in a non-volatile memory is described. A material, such as an undoped polysilicon, amorphous silicon, or amorphous polysilicon or a silicon rich nitride, is inserted in the gate structure. The oxide film that results from the oxidation of these films is relatively free from impurities. As a result, charge leakage between the floating gate and control gate is reduced.

Abstract: In but one aspect of the invention, a method of depositing polysilicon comprises providing a substrate within a chemical vapor deposition reactor, with the substrate having an exposed substantially crystalline region and an exposed substantially amorphous region. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor under conditions effective to substantially selectively deposit polysilicon on the crystalline region and not the amorphous region. In another aspect a method of fabricating a field effect transistor on a substrate comprises forming a gate dielectric layer and a gate over semiconductive material. Doped source/drain regions are formed within semiconductive material laterally proximate the gate. Substantially amorphous insulating material is formed over and laterally proximate the gate. The substrate is provided within a chemical vapor deposition reactor.

Abstract: A dielectric insulating composite for insulating a floating gate from a control gate in a non-volatile memory is described. A material, such as an undoped polysilicon, amorphous silicon, or amorphous polysilicon or a silicon rich nitride, is inserted in the gate structure. The oxide film that results from the oxidation of these films is relatively free from impurities. As a result, charge leakage between the floating gate and control gate is reduced.