Abstract: A micromechanical sensor element includes: a substrate; a first seismic mass suspended from the substrate, which is deflectable from a first rest position by an acceleration acting perpendicularly to a main plane of extension; and a second seismic mass, which is deflectable from a second rest position by the acceleration. At least a partial overlap is provided between the first seismic mass and the second seismic mass perpendicular to the main plane of extension.

Abstract: A micromechanical sensor element includes: a substrate; a first seismic mass suspended from the substrate, which is deflectable from a first rest position by an acceleration acting perpendicularly to a main plane of extension; and a second seismic mass, which is deflectable from a second rest position by the acceleration. At least a partial overlap is provided between the first seismic mass and the second seismic mass perpendicular to the main plane of extension.

Abstract: The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor.

Abstract: A micromechanical component includes: a substrate; a micromechanical functional plane provided on the substrate; a covering plane provided on the micromechanical functional plane; and a printed circuit trace plane provided on the covering plane. The covering plane includes a monocrystalline region which is epitaxially grown on an underlying monocrystalline region, and the covering plane includes a polycrystalline region which is epitaxially grown on an underlying polycrystalline starting layer at the same time.

Abstract: The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor.

Abstract: A sensor has a foundation wafer having a sensor chamber, at least one silicon-based micromechanical structure integrated with the sensor chamber of the foundation wafer, at least one covering that covers the foundation wafer in a region of the sensor chamber, the covering including a first layer which is a deposition layer and is permeable to an etching medium and reaction products, and a hermetically sealing second layer which is a sealing layer and located above the first layer, the deposition layer which is the first layer being permeable in a region of the sensor chamber to the etching medium and a reaction product, the deposition layer for being permeable having structures selected from the group consisting of etching openings, porous regions, and both.

Abstract: The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor.

Abstract: A method of sacrificial layer etching of micromechanical surface structures, in which a sacrificial layer is deposited on a heatable silicon substrate and is structured. A temperature difference between the substrate and the vapor phase of an etching medium is established in such a way that exposed metal contacts made of aluminum alloys are not attacked at the same time and are not subsequently exposed to any risk of corrosion.

Abstract: The present invention provides a micromechanical component including a substrate (1); a micromechanical functional plane (100) provided on the substrate; a covering plane (200) provided on the micromechanical functional plane (100); and a printed circuit trace plane (300) provided on the covering plane (200). The covering plane (200) features a monocrystalline region (14) which is epitaxially grown on an underlying monocrystalline region (7; 24); and the covering plane (200) features a polycrystalline region (15) which is epitaxially grown on an underlying polycrystalline starting layer (13) at the same time.

Abstract: A method for manufacturing a micromechanical component, in particular, a surface-micromechanical yaw sensor, includes the following steps: providing a substrate having a front side and a back side; forming a micromechanical pattern on the front side; applying a protective layer on the micromechanical pattern on the front side; forming a micromechanical pattern on the back side, a resting on the micromechanical pattern on the front side taking place at least temporarily; removing the protective layer on the front side; and optionally further processing the micromechanical pattern on the front side and/or the micromechanical pattern on the back side.

Abstract: A micromechanical sensor includes a support of silicon substrate having an epitaxial layer of silicon applied on the silicon substrate. A part of the epitaxial layer is laid bare to form at least one micromechanical deflection part by an etching process. The bared deflection part is made of polycrystalline silicon which has grown in polycrystalline form during the epitaxial process over a silicon-oxide layer which has been removed by etching. In the support region and/or at the connection to the silicon substrate, the exposed deflection part passes into single crystal silicon. By large layer thicknesses, a large working capacity of the sensor is possible. The sensor structure provides enhanced mechanical stability, processability, and possibilities of shaping, and it can be integrated, in particular, in a bipolar process or mixed process (bipolar-CMOS, bipolar-CMOS-DMOS).

Abstract: A method for fabricating a micromechanical component, in particular a surface-micromechanical acceleration sensor, involves preparing a substrate and providing an insulation layer on the substrate, in which a patterned circuit trace layer is buried. A conductive layer, including a first region and a second region, is provided on the insulation layer, and a movable element is configured in the first region by forming a first plurality of trenches and by using an etching agent to remove at least one portion of the insulation layer from underneath the conductive layer. A contact element is formed and electrically connected to the circuit trace layer in the second region by configuring a second plurality of trenches, and the resultant movable element is encapsulated in the first region. The second plurality of trenches for forming the contact element in the second region is first formed after the encapsulation of the movable element formed in the first region.

Abstract: A method for fabricating micromechanical components, which provides for depositing one or a plurality of sacrificial layers on a silicon substrate and, thereon, a silicon layer. In subsequent method steps, a structure is patterned out of the silicon layer, and the sacrificial layer is removed, at least under one section of the structure. The silicon layer is doped by an implantation process.

Abstract: A process for the manufacture of a Coriolis rate-of-rotation sensor with oscillatory support masses spring-suspended on a substrate as well as driving means for the excitation of the planar oscillation of the oscillating masses and evaluation means for the determination of a Coriolis acceleration. Oscillating masses, driving means and integrated stops are structured in a common operation by means of plasma etching from a silicon-on-insulator (SOI) wafer.

Abstract: A manufacturing method for a micromechanical component, and in particular for a micromechanical rotation rate sensor, which has a supporting first layer, an insulating second layer that is arranged on the first layer, and a conductive third layer that is arranged on the second layer.

Abstract: A bonding pad structure, in particular for a micromechanical sensor, includes a substrate, an electrically insulating sacrificial layer provided on the substrate, a patterned conductor path layer buried in the sacrificial layer, a contact hole provided in the sacrificial layer, and a bonding pad base, composed of an electrically conductive material. The bonding pad base has a first region extending over the sacrificial layer, and a second layer in contact with the conductor path region and extending through the contact hole. A protective layer is provided at least temporarily on the sacrificial layer in a specific region beneath and around the bonding pad base to prevent underetching of the sacrificial layer beneath the bonding pad base during etching of the sacrificial layer in such a way that the substrate and/or the conductor path is exposed.

Abstract: A rate-of-rotation sensor includes a three-layer system. The rate-of-rotation sensor and the conductor traces are patterned out of the third layer. The conductor traces are electrically insulated (isolated) by cutouts from other regions of the third layer and by a second electrically insulating layer from a first layer. Thus, a simple electrical contacting (configuration) is achieved that is patterned out of a three-layer system. Since the same etching process is used for the first and the third layer, an especially efficient manufacturing is possible.

Abstract: A micromechanical sensor includes a support of silicon substrate having an epitaxial layer of silicon applied on the silicon substrate. A part of the epitaxial layer is laid bare to form at least one micromechanical deflection part by an etching process. The bared deflection part is made of polycrystalline silicon which has grown in polycrystalline form during the epitaxial process over a silicon-oxide layer which has been removed by etching. In the support region and/or at the connection to the silicon substrate, the exposed deflection part passes into single crystal silicon. By large layer thicknesses, a large working capacity of the sensor is possible. The sensor structure provides enhanced mechanical stability, processability, and possibilities of shaping, and it can be integrated, in particular, in a bipolar process or mixed process (bipolar-CMOS, bipolar-CMOS-DMOS).

Abstract: An acceleration sensor is composed of a three-layer system. The acceleration sensor and conductor tracks are patterned out of the third layer. The conductor tracks are electrically isolated from other regions of the third layer by recesses and electrically insulated from a first layer by a second electrically insulating layer. In this manner, a simple electrical contacting is achieved, which is configured out of a three-layer system. One exemplary application of the acceleration sensor includes mounting the acceleration sensor on a vibrational system of an rpm (rate-of-rotation sensor). This simplifies the manufacturing of an rpm sensor, since the vibrational system and the acceleration sensor are configured out of a three-layer system, wherein the conductor tracks are run into the frame of the rpm sensor in which the vibrational system is suspended, so as to allow excursion.

Abstract: In a sensor and a method for manufacturing a sensor, a movable element is patterned out of a silicon layer and is secured to a substrate. The conducting layer is subdivided into various regions, which are electrically insulated from one another. The electrical connection between the various regions of the silicon layer is established by a conducting layer, which is arranged between a first and a second insulating layer.