Abstract: A wide band analog-to-digital converter used in a frequency multiplexed communication system. The converter includes a plurality, M, of time-interleaved analog-to-digital converter subunits (ADC subunits). The sampling rate, FS1, of the M ADC subunits is selected to locate one or more integer multiples of a Nyquist frequency of a respective subunit ADC in one or more guard bands, and/or such that one or more integer multiples of FS1 are also located in the guard bands.

Abstract: A multi-channel time interleaved ADC (TIADC) provides for offset estimation and correction. The correction is accomplished through analog adjustment of offset rather than by digital correction of their outputs. In certain aspects, polarity reversal circuits may be used to further improve performance.

Abstract: A technique for increasing the charge storage capacity of a charge storage device without changing its inherent charge transfer function. The technique may be used to implement a charge domain signal processing circuits such as Analog to Digital Converters (ADCs) used in digital radio frequency signal receivers.

Abstract: A low-power communication interface, such as used with 10 Gigabit Ethernet, that uses an analog front end having a charge-domain analog-to-digital converter that uses a charge-domain pipeline.

Abstract: A circuit for improved sampler linearity, in an analog to digital converter, by taking simultaneous analog samples of an input signal V(t) and its derivative, dV/dt. The correction can be implemented as a memoryless non-linear model in the analog, digital, or mixed signal domains. Delay elements placed in the clock signal path or main input signal path can provide more precise control over the correction.

Abstract: A method and structure of providing a doped plug to improve the performance of CCD gaps is discussed. A highly-doped region is implemented in a semiconductor, aligned beneath a gap. The plug provides a highly-conductive region at the semiconductor surface, therefore preventing the development of a region where potential is significantly influenced by surface charges.

Abstract: An approach to rejecting input common-mode voltage variations in a sampler/converter that avoids the use of a differential amplifier in the signal path, and without introducing added distortion or noise. In one embodiment, the input common-mode variations are sensed on a pair of matched resistors that straddle the common mode analog inputs, on a node ‘Vcmi’. An alternative, switched-capacitor-based sensing scheme is also possible. Using this measured Vcmi, adjustments are then made to the rest of the sampler/converter to take out any variations observed at Vcmi.

Abstract: The present invention provides an apparatus for adding or subtracting an amount charge to or from a charge packet in a CCD as the packet traverses the CCD. The apparatus uses a “wire transfer” device structure to perform the addition or subtraction of charge during the charge packets traversal across the device. A pair of electrically interconnected diffusions are incorporated within the charge couple path to provide an amount of charge which can be added or subtracted from packets as the packets traverse the CCD.

Abstract: A charge-domain pipeline of at least two stages is provided. Each stage comprises a charge-storage node, a charge-transfer circuit for conveying charge from said charge-storage node out of said stage, a charge-control capacitor connected to said charge-storage node and driven by a periodic clock voltage, a comparator which compares the voltage of said charge-storage node to a reference voltage, and a digital latch which latches the state of said comparator output under control of a second periodic clock voltage and provides a latched digital output from said stage. The second stage of the pipeline further includes a first charge-redistribution capacitor connected to the charge-storage node of the second stage and driven by a conditional voltage responsive to the latched digital output from the first stage. The charge output from each stage of said pipeline is substantially similar to the charge input to said stage.

Abstract: A technique for correcting errors in Bucket Brigade Device (BBD)-based pipelined devices, such as Analog-to Digital Converters (ADCs). The gain between pipeline stages is desired to be a specific amount, such as unity: that is, all net charge present in each stage ideally is transferred to the next stage. In practical BBD-based circuits, however, the charge-transfer gain is less than ideal, resulting in errors. The approach described herein provides analog correction of such errors due to both capacitor mismatch and to sub-unity charge-transfer gain. In certain embodiments the adjustment circuit may use an adjustable current source and Field Effect Transistor to introduce the correction. In still other embodiments, the adjustment circuit may determine a voltage-feedback coefficient.

Abstract: A cable gateway, such as compatible with version 3.0 of the Data Over Cable Service Interface Specifications and other audiovisual standards, that uses an analog front end having a charge-domain analog-to-digital converter that uses a charge-domain pipeline of at least two stages.

Abstract: An integrated circuit memory cell and voltage ladder design that adapts techniques typically applied to Static Random Access Memory (SRAM) circuits to implement a compact array of analog Voltage Random Access Memory (VRAM) locations. The memory cells in the VRAM each store a digital value that controls a corresponding switch. The switch couple a particular voltage from a set of voltages generated by the ladder, to be output when that location is enabled. Multiple analog output voltages are provided by simply providing additional rows of cells.

Abstract: A single-ended charge-domain pipeline of at least two stages is provided. Each stage comprises a charge-storage node, a charge-transfer circuit for conveying charge from said charge-storage node out of said stage, a charge-control capacitor connected to said charge-storage node and driven by a periodic clock voltage, a comparator which compares the voltage of said charge-storage node to a reference voltage, and a digital latch which latches the state of said comparator output under control of a second periodic clock voltage and provides a latched digital output from said stage. The second stage of the pipeline further includes a first charge-redistribution capacitor connected to the charge-storage node of the second stage and driven by a conditional voltage responsive to the latched digital output from the first stage. The charge output from each stage of said pipeline is substantially identical to the charge input to said stage.

Abstract: In a differential bucket-brigade device (BBD) pipeline it is necessary for proper circuit function to maintain the common-mode charge within an acceptable range at each pipeline stage. Embodiments of the present invention provide for reducing common-mode charge variations in a differential charge-domain pipeline. Common mode charge at a given stage of the pipeline is adjusted according to one or more measured characteristics, thereby controlling common mode charge variation throughout the differential charge-domain pipeline.

Abstract: A technique for correcting errors in Bucket Brigade Device (BBD)-based pipelined devices, such as Analog-to Digital Converters (ADCs). The gain between pipeline stages is desired to be a specific amount, such as unity: that is, all net charge present in each stage ideally is transferred to the next stage. In practical BBD-based circuits, however, the charge-transfer gain is less than ideal, resulting in errors. The approach described herein provides analog correction of such errors due to both capacitor mismatch and to sub-unity charge-transfer gain. In certain embodiments the adjustment circuit may use an adjustable current source and Field Effect Transistor to introduce the correction. In still other embodiments, the adjustment circuit may determine a voltage-feedback coefficient.

Abstract: An ADC implementation of a bucket brigade type charge transfer pipeline using Metal Oxide Semiconductor (MOS) Bucket Brigade Devices (BBDs) that can be used in Analog-to-Digital (A/D) converters and other applications. In one embodiment a control circuit provides independent control of charge storage and charge transfer timing. Other arrangements provide high-speed and high-accuracy (A/D) conversion by employing a “boosted” charge-transfer circuit. The implementation can also achieve lower power consumption and improved resolution compared to other charge-domain methods by the use of a tapered pipeline, in which the amount of charge being processed is reduced in later pipeline stages compared to earlier ones. Still other embodiments enable implementing more than one decision threshold per stage, to support multi-bit resolution per stage and RSD-type A/D conversion algorithms.

Abstract: A technique for increasing the charge storage capacity of a charge storage device without changing its inherent charge transfer function. The technique may be used to implement a charge domain signal processing circuits such as Analog to Digital Converters (ADCs) used in digital radio frequency signal receivers.

Abstract: A technique for correcting errors in Bucket Brigade Device (BBD)-based pipelined devices, such as Analog-to Digital Converters (ADCs). The gain between pipeline stages is desired to be a specific amount, such as unity: that is, all net charge present in each stage ideally is transferred to the next stage. In practical BBD-based circuits, however, the charge-transfer gain is less than ideal, resulting in errors. The approach described herein provides analog correction of such errors due to both capacitor mismatch and to sub-unity charge-transfer gain. In certain embodiments the adjustment circuit may use an adjustable current source and Field Effect Transistor to introduce the correction. In still other embodiments, the adjustment circuit may determine a voltage-feedback coefficient.

Abstract: An interdigitated Metal-Insulator-Metal (MIM) capacitor provides self-shielding and accurate capacitance ratios with small capacitance values. The MIM capacitor includes two terminals that extend to a plurality of interdigitated fingers separated by an insulator. Metal plates occupy layers above and below the fingers and connect to fingers of one terminal. As a result, the MIM capacitor provides self-shielding to one terminal. Additional shielding may be employed by a series of additional shielding layers that are isolated from the capacitor. The self-shielding and additional shielding may also be implemented at an array of MIM capacitors.

Abstract: An integrated circuit memory cell and voltage ladder design that adapts techniques typically applied to Static Random Access Memory (SRAM) circuits to implement a compact array of analog Voltage Random Access Memory (VRAM) locations. The memory cells in the VRAM each store a digital value that controls a corresponding switch. The switch couple a particular voltage from a set of voltages generated by the ladder, to be output when that location is enabled. Multiple analog output voltages are provided by simply providing additional rows of cells.