Abstract: A polymerizable composition includes an organic modified silicate selected from the group consisting of silsesquioxanes having the composition RSiO1.5, partially condensed alkoxysilanes, organically modified silicates having the composition RSiO3 and R2SiO2, and partially condensed orthosilicates having the composition SiOR4, where R is an organic substituent; a decomposable organic compound; a photoinitiator; and a release agent. The composition polymerizes upon exposure to UV radiation to form an inorganic silica network, and the decomposable organic compound decomposes upon exposure to heat to form pores in the inorganic silica network. The composition may be used to form a patterned dielectric layer in an integrated circuit device. A metallic film may be disposed on the patterned dielectric layer and then planarized.

Abstract: The present invention is directed to a method of and a mold for arranging features on a substrate to replicate the features with minimal dimensional variability. The method includes arranging features on a layer to minimize thickness variations in the layer that are attributable to density variations of the plurality of features on the layer. The features are transferred into an underlying substrate. It is believed that by forming the features so as to define a uniform fill factor in the layer, the thickness variations may be reduced, if not abrogated. To that end, one method in accordance with the present invention includes forming a flowable material on the substrate. Thereafter, a plurality of features is formed in a region of the flowable material. The plurality of features are arranged to provide a substantially uniform fill factor in the region.

Abstract: The present invention is directed to methods for patterning a substrate by imprint lithography. Imprint lithography is a process in which a liquid is dispensed onto a substrate. A template is brought into contact with the liquid and the liquid is cured. The cured liquid includes an imprint of any patterns formed in the template. In one embodiment, the imprint process is designed to imprint only a portion of the substrate. The remainder of the substrate is imprinted by moving the template to a different portion of the template and repeating the imprint lithography process.

Abstract: The present invention is directed to a material for use in imprint lithography that features a composition having a viscosity associated therewith and including a surfactant, a polymerizable component, and an initiator responsive to a stimuli to vary the viscosity in response thereto, with the composition, in a liquid state, having the viscosity being lower than about 100 centipoises, a vapor pressure of less than about 20 Torr, and in a solid cured state a tensile modulus of greater than about 100 MPa, a break stress of greater than about 3 MPa and an elongation at break of greater than about 2%.

Abstract: The present invention is directed to a method of forming an imprinting layer on a substrate including high resolution features, and transferring the features into a solidified region of the substrate. Desired thickness of the residual layer may be minimized in addition to visco-elastic behavior of the material.

Abstract: A polymerizable composition includes an organic modified silicate selected from the group consisting of silsesquioxanes having the composition RSiO1.5, partially condensed alkoxysilanes, organically modified silicates having the composition RSiO3 and R2SiO2, and partially condensed orthosilicates having the composition SiOR4, where R is an organic substituent; a decomposable organic compound; a photoinitiator; and a release agent. The composition polymerizes upon exposure to UV radiation to form an inorganic silica network, and the decomposable organic compound decomposes upon exposure to heat to form pores in the inorganic silica network. The composition may be used to form a patterned dielectric layer in an integrated circuit device. A metallic film may be disposed on the patterned dielectric layer and then planarized.

Abstract: The present invention is directed to methods for patterning a substrate by imprint lithography. Imprint lithography is a process in which a liquid is dispensed onto a substrate. A template is brought into contact with the liquid and the liquid is cured. The cured liquid includes an imprint of any patterns formed in the template. In one embodiment, the imprint process is designed to imprint only a portion of the substrate. The remainder of the substrate is imprinted by moving the template to a different portion of the template and repeating the imprint lithography process.

Abstract: The present invention provides a method of controlling the distribution of a fluid on a body that features compensating for varying distribution of constituent components of a composition that moved over a surface of a substrate. To that end, the method includes generating a sequence of patterns of liquid upon a substrate, each of which includes a plurality of spaced-apart liquid regions, with voids being defined between adjacent liquid regions. A second of the patterns of liquid of the sequence is arranged so that the liquid regions associated therewith are in superimposition with the voids of a first of the patterns of liquid of the sequence.

Abstract: The present invention includes a composition for a silicon-containing material used as an etch mask for underlying layers. More specifically, the silicon-containing material may be used as an etch mask for a patterned imprinted layer comprising protrusions and recessions. To that end, in one embodiment of the present invention, the composition includes a hydroxyl-functional silicone component, a cross-linking component, a catalyst component, and a solvent. This composition allows the silicon-containing material to selectively etch the protrusions and the segments of the patterned imprinting layer in superimposition therewith, while minimizing the etching of the segments in superposition with the recessions, and therefore allowing an in-situ hardened mask to be created by the silicon-containing material, with the hardened mask and the patterned imprinting layer forming a substantially planarized profile.

Abstract: Methods of forming continuous layers on regions of a substrate are described. Generally, an imprint lithography template may contact liquid positioned on the substrate. The liquid may be cured forming a masking layer, and the imprint lithography template separated from the masking layer. Prior to separation, pressurized gas and/or vacuum may be applied between the template and the substrate. Additionally, during separation, pressurized gas and/or vacuum may be applied between the template and the substrate.

Abstract: The present invention includes a method and a composition to form a layer on a substrate having uniform etch characteristics. To that end, the method includes controlling variations in the characteristics of a solid layer, such etch characteristics over the area of the solid layer as a function of the relative rates of evaporation of the liquid components that comprise the composition from which the solid layer is formed.

Abstract: A method for spreading a conformable material between a substrate and a template having a mold. The method comprises positioning the mold to be in superimposition with the substrate defining a volume therebetween. A first sub-portion of the volume is charged with the conformable material through capillary action between the conformable material and one of the mold and the substrate. A second sub-portion of the volume is filled with the conformable material by creating a deformation in the mold.

Abstract: The present invention includes a composition for a silicon-containing material used as an etch mask for underlying layers. More specifically, the silicon-containing material may be used as an etch mask for a patterned imprinted layer comprising protrusions and recessions. To that end, in one embodiment of the present invention, the composition includes a hydroxyl-functional silicone component, a cross-linking component, a catalyst component, and a solvent. This composition allows the silicon-containing material to selectively etch the protrusions and the segments of the patterned imprinting layer in superimposition therewith, while minimizing the etching of the segments in superposition with the recessions, and therefore allowing an in-situ hardened mask to be created by the silicon-containing material, with the hardened mask and the patterned imprinting layer forming a substantially planarized profile.

Abstract: The present invention includes a method of solidifying a polymerizable liquid to form a film on a substrate that features minimizing inhibition of the polymerization process by oxygen contained in the atmosphere surrounding the polymerizable liquid. To that end, the polymerizable liquid includes, inter alia, an initiator that consumes oxygen that interacts with the polymerizable liquid and generates additional free radicals to facilitate the polymerizable process.

Abstract: Methods of forming continuous layers on regions of a substrate are described. Generally, an imprint lithography template may contact liquid positioned on the substrate. The liquid may be cured forming a masking layer, and the imprint lithography template separated from the masking layer. Prior to separation, pressurized gas and/or vacuum may be applied between the template and the substrate. Additionally, during separation, pressurized gas and/or vacuum may be applied between the template and the substrate.

Abstract: The present invention is directed to a method of forming an imprinting layer on a substrate including high resolution features, and transferring the features into a solidified region of the substrate. Desired thickness of the residual layer may be minimized in addition to visco-elastic behavior of the material.

Abstract: The present invention is directed to a method of forming a layer on a region of a substrate, the method including, inter alia, positioning a liquid on the substrate; and contacting the liquid with the mold, defining a gap between the mold and the substrate, with the gap enabling positioning of the liquid by capillary forces to generate the layer over the region.

Abstract: An imprint lithography template with an active area arranged to receive imprinting material during an imprint lithography process and a non-active area adjacent the active area is described. At least a portion of the non-active area is treated to inhibit flow of the imprinting material from the active area to the non-active area during the imprint lithography process.

Abstract: The present invention provides a method for patterning a substrate with a template having a mold that features positioning conformable material between the substrate and the mold and filling a volume defined between the mold and the substrate with the conformable material through capillary action between the conformable material and one of the mold and the substrate. Thereafter, the conformable material is solidified. Specifically, the distance between the mold and the substrate is controlled to a sufficient degree to attenuate, if not avoid, compressive forces between the mold and the substrate. As a result, upon initial contact of the mold with the conformable material, spontaneous capillary filling of the volume between the mold and the substrate occurs.

Abstract: The present invention includes a composition for a silicon-containing material used as an etch mask for underlying layers. More specifically, the silicon-containing material may be used as an etch mask for a patterned imprinted layer comprising protrusions and recessions. To that end, in one embodiment of the present invention, the composition includes a hydroxyl-functional silicone component, a cross-linking component, a catalyst component, and a solvent. This composition allows the silicon-containing material to selectively etch the protrusions and the segments of the patterned imprinting layer in superimposition therewith, while minimizing the etching of the segments in superposition with the recessions, and therefore allowing an in-situ hardened mask to be created by the silicon-containing material, with the hardened mask and the patterned imprinting layer forming a substantially planarized profile.