Abstract: Apparatuses and methods of high-voltage capacitance-sensing circuits are described. One apparatus includes a capacitance-sensing circuit coupled to a capacitive-sense array of electrodes. The capacitance-sensing circuit includes a self-capacitance sensing channel, a first voltage source (e.g., a low-voltage drive source) to drive a reference voltage, and a second voltage source (e.g., high-voltage drive source) to drive a sensing voltage. The sensing voltage is greater in magnitude than the reference voltage. The capacitance-sensing circuit also includes 1) a first set of switches to selectively couple the self-capacitance sensing channel or the second voltage source to a sensing electrode of the capacitance-sensing array; and 2) a second set of switches to selectively couple the first voltage source or the second voltage source to a shielding electrode of the capacitance-sensing array.

Abstract: A system that facilitates access to an SMBus is provided. The system includes a notification component that identifies an SMBus event and a driver that dispatches the SMBus event to an AML event handler. A method for SMBus event handling is also provided. The method includes receiving an SMBus event notification, identifying the SMBus event notification, dispatching the SMBus event notification to an AML event handler, and handling the SMBus event notification in AML code. Two new ACPI opcodes, which are a three parameter operation region read and a three parameter operation region write can be utilized in accordance with the present invention.

Abstract: A system that facilitates access to an SMBus is provided. The system includes a notification component that identifies an SMBus event and a driver that dispatches the SMBus event to an AML event handler. A method for SMBus event handling is also provided. The method includes receiving an SMBus event notification, identifying the SMBus event notification, dispatching the SMBus event notification to an AML event handler, and handling the SMBus event notification in AML code. Two new ACPI opcodes, which are a three parameter operation region read and a three parameter operation region write can be utilized in accordance with the present invention.

Abstract: Compounds represented by the general formula ##STR1## when a and b are each 0 or 1 and R represents OH or lower alkoxy when a is 1, or OH or -NR'.sub.2 when a is zero. They can be prepared by the reaction of allyl glycidly ether with the appropriate organic acid e.g. salicylic acid.Useful as ultra-violet absorbent substances and as intermediates for the preparation of other such substances, for example by polymerization and copolymerization and by reaction with organosilicon compounds having silicon-bonded hydrogen atoms.

Abstract: A hair treating composition which comprises (1) a silane or a polydiorganosiloxane having quaternary ammonium substituted groups attached to silicon, (2) a polydiorganosiloxane having silicon-bonded substituents which are amino-substituted hydrocarbon groups, (3) one or more surfactants, and (4) water. The compositions can be formulated as e.g. hair conditioning agents or as shampoos.

Abstract: Organosilicon compounds which are silanes or siloxanes characterized by the presence of silicon-bonded groups of the formula ##STR1## in which X represents --OH, --OCH.sub.3 or OC.sub.2 H.sub.5 when p=1 or --OH or dialkylamino when p=0, n can be 0 or 1 and p=0 or 1.

Abstract: Organosilicon compounds which are silanes or siloxanes characterized by the presence of silicon-bonded groups represented by the general formula ##STR1## in which R' is a divalent hydrocarbon group which may contain ether oxygen, R" represents --CHBCH.sub.2 -- or --C.sub.6 H.sub.9 B-- in which B is OH or the group ##STR2## a and n are each 0 or 1 and Y is --OH, lower alkoxy or --NX.sub.2 wherein X represents hydrogen or lower alkyl.The compounds are prepared by the reaction of an organosilicon compound having an organic substituent which contains an epoxy group, and the appropriate acid or acid chloride. They absorb ultra violet radiation and are useful as cosmetic and other sunscreen agents.

Abstract: Process for preparing organosiloxanes having in the molecule at least one unit of the general formula ##STR1## in which R is C.sub.1-4 alkyl or a phenyl group, R' represents an aliphatic or aromatic group composed of carbon, hydrogen and optionally oxygen and having a valency of n+1, Y represents OH or alkoxy, a is 0, 1 or 2, b is 0 or 1 and n is 1, 2 or 3. The process comprises reacting an organosiloxane having silicon-bonded hydroxyalkyl or hydroxyaryl substituents with the appropriate acid chloride.The organosiloxanes absorb ultra violet radiation and are useful as sunscreen agents.Also claimed are certain novel siloxanes which can be obtained by the said process.