Abstract: A resolving aperture assembly for an ion implantation system has a first plate and a second plate, where the first plate and second plate generally define a resolving aperture therebetween. A position of the first plate with respect to the second plate generally defines a width of the resolving aperture. One or more actuators are operably coupled to one or more of the first plate and second plate and are configured to selectively vary the position the first plate and second plate with respect to one another, thus selectively varying the width of the resolving aperture. A servo motor precisely varies the resolving aperture width and a pneumatic cylinder independently selectively closes the resolving aperture. A downstream position actuator varies a position of the resolving aperture along a path of the ion beam, and a controller controls the one or more actuators based on desired properties of the ion beam.

Abstract: A resolving aperture assembly for an ion implantation system has a first plate and a second plate, where the first plate and second plate generally define a resolving aperture therebetween. A position of the first plate with respect to the second plate generally defines a width of the resolving aperture. One or more actuators are operably coupled to one or more of the first plate and second plate and are configured to selectively vary the position the first plate and second plate with respect to one another, thus selectively varying the width of the resolving aperture. A servo motor precisely varies the resolving aperture width and a pneumatic cylinder independently selectively closes the resolving aperture. A downstream position actuator varies a position of the resolving aperture along a path of the ion beam, and a controller controls the one or more actuators based on desired properties of the ion beam.

Abstract: A resolving aperture assembly for an ion implantation system has a first plate and a second plate, where the first plate and second plate generally define a resolving aperture therebetween. A position of the first plate with respect to the second plate generally defines a width of the resolving aperture. One or more actuators are operably coupled to one or more of the first plate and second plate and are configured to selectively vary the position the first plate and second plate with respect to one another, thus selectively varying the width of the resolving aperture. A servo motor precisely varies the resolving aperture width and a pneumatic cylinder independently selectively closes the resolving aperture. A downstream position actuator varies a position of the resolving aperture along a path of the ion beam, and a controller controls the one or more actuators based on desired properties of the ion beam.

Abstract: One embodiment of the invention relates to an apparatus for profiling an ion beam. The apparatus includes a current measuring device having a measurement region, wherein a cross-sectional area of the ion beam enters the measurement region. The apparatus also includes a controller configured to periodically take beam current measurements of the ion beam and to determine a two dimensional profile of the ion beam by relating the beam current measurements to sub-regions within the current measuring device. Other apparatus and methods are also disclosed.

Abstract: One embodiment of the invention relates to an apparatus for profiling an ion beam. The apparatus includes a current measuring device having a measurement region, wherein a cross-sectional area of the ion beam enters the measurement region. The apparatus also includes a controller configured to periodically take beam current measurements of the ion beam and to determine a two dimensional profile of the ion beam by relating the beam current measurements to sub-regions within the current measuring device. Other apparatus and methods are also disclosed.

Abstract: Ion implantation systems and beamline assemblies therefor are provided, in which multi-cusped magnetic fields are provided in a beamguide and the beamguide is energized to provide microwave electric fields in a traveling wave along the beamguide passageway. The magnetic and electric fields interact to provide an electron-cyclotron resonance condition for beam containment in the beamguide passageway.

Abstract: Ion implantation systems and beamline assemblies therefor are provided, in which multi-cusped magnetic fields are provided in a beamguide and the beamguide is energized to provide microwave electric fields in a traveling wave along the beamguide passageway. The magnetic and electric fields interact to provide an electron-cyclotron resonance condition for beam containment in the beamguide passageway.