Abstract: A substrate processing system is provided and includes a substrate support, a memory, and calibration, operating parameter, and solving modules. The substrate support supports a substrate and includes temperature control elements. The memory stores, for the temperature control elements, temperature calibration values and sensitivity calibration values. The calibration module, during calibration of the temperature control elements, performs a first calibration process to determine the temperature calibration values or a second calibration process to determine the sensitivity calibration values. The sensitivity calibration values relate at least one of trim amounts or deposition amounts to temperature changes. The operating parameter module determines operating parameters for the temperature control elements based on the temperature and sensitivity calibration values.

Abstract: A system to deposit a film on a substrate using atomic layer deposition includes a pedestal arranged in a processing chamber to support the substrate on a top surface of the pedestal when depositing the film on the substrate. A first annular recess in the pedestal extends downwardly from the top surface of the pedestal and radially inwardly from an outer edge of the pedestal towards an outer edge of the substrate. The first annular recess has an inner diameter that is greater than a diameter of the substrate. An annular ring is made of a dielectric material and is arranged around the substrate in the first annular recess. A second annular recess in the pedestal is located under the annular ring. The second annular recess has a height and extends radially inwardly from the outer edge of the pedestal towards the outer edge of the substrate.

Abstract: A substrate processing system configured to perform a deposition process on a substrate includes a substrate support including a plurality of zones and a plurality of resistive heaters arranged throughout the plurality of zones. The plurality of resistive heaters includes separately-controllable resistive heaters arranged in respective ones of the plurality of zones. A controller is configured to, during the deposition process, control the plurality of resistive heaters to selectively adjust temperatures within the plurality of zones.

Abstract: Apparatuses and systems for pedestals are provided. An example pedestal may have a body with an upper annular seal surface that is planar, perpendicular to a vertical center axis of the body, and has a radial thickness, a lower recess surface offset from the upper annular seal surface, and a plurality of micro-contact areas (MCAs) protruding from the lower recess surface, each MCA having a top surface offset from the lower recess surface by a second distance less, and one or more electrodes within the body. The upper annular seal surface may be configured to support an outer edge of a semiconductor substrate when the semiconductor substrate is being supported by the pedestal, and the upper annular seal surface and the tops of the MCAs may be configured to support the semiconductor substrate when the semiconductor substrate is being supported by the pedestal.

Abstract: A showerhead utilized within a process chamber includes a first inlet for receiving a first gas from a first source at a center region of an inner plenum defined therein. A plurality of second inlets is defined along a peripheral region of the showerhead for receiving a second gas from a second source. A plurality of conduits couples the edge plenum to an outer edge of the inner plenum so as to supply the second gas to the inner plenum. The first gas creates an inner flow that flows radially outward from the center region to an outer edge of the inner plenum and the second gas supplied by the edge plenum creates a perimeter flow that flows inward from the outer edge of the inner plenum toward the center region. A stagnation point defining an adjustable radius is formed at an interface of the first gas and the second gas.

Abstract: A substrate processing system configured to perform a deposition process on a substrate includes a substrate support including a plurality of zones and a plurality of resistive heaters arranged throughout the plurality of zones. The plurality of resistive heaters includes separately-controllable resistive heaters arranged in respective ones of the plurality of zones. A controller is configured to, during the deposition process, control the plurality of resistive heaters to selectively adjust temperatures within the plurality of zones.

Abstract: A medical aspiration apparatus for removing the contents of a subject's stomach includes a nasogastric (NG) tube having a tip structure that is less likely to be obstructed by stomach mucosa and solid particles of the stomach's contents. The apparatus also includes a flow control manifold that is capable of quickly and easily alleviating obstructions.