Abstract: The hardness of zinc sulfide is increased by adding selective elements within a specified range to the crystal lattice of the zinc sulfide. The increased hardness over conventional zinc sulfide does not substantially compromise the optical properties of the zinc sulfide. The zinc sulfide may be used as a protective coating for windows and domes.

Abstract: A method is directed to increasing the hardness of zinc sulfide. The hardness of zinc sulfide is increased by adding selective elements within a specified range to the crystal lattice of the zinc sulfide. The increased hardness over conventional zinc sulfide does not substantially compromise the optical properties of the zinc sulfide. The zinc sulfide may be used as a protective coating for windows and domes.

Abstract: The hardness of zinc sulfide is increased by adding selective elements within a specified range to the crystal lattice of the zinc sulfide. The increased hardness over conventional zinc sulfide does not substantially compromise the optical properties of the zinc sulfide. The zinc sulfide may be used as a protective coating for windows and domes.

Abstract: The hardness of zinc sulfide is increased by adding selective elements within a specified range to the crystal lattice of the zinc sulfide. The increased hardness over conventional zinc sulfide does not substantially compromise the optical properties of the zinc sulfide. The zinc sulfide may be used as a protective coating for windows and domes.

Abstract: Semiconductor processing and equipment are disclosed. The semiconductor equipment and processing provide semiconductor wafers with reduced defects.

Abstract: The hardness of zinc sulfide is increased by adding selective elements within a specified range to the crystal lattice of the zinc sulfide. The increased hardness over conventional zinc sulfide does not substantially compromise the optical properties of the zinc sulfide. The zinc sulfide may be used as a protective coating for windows and domes.

Abstract: The hardness of zinc sulfide is increased by adding selective elements within a specified range to the crystal lattice of the zinc sulfide. The increased hardness over conventional zinc sulfide does not substantially compromise the optical properties of the zinc sulfide. The zinc sulfide may be used as a protective coating for windows and domes.

Abstract: An optical article and method of making the same are provided. The optical article has optical multi-aperture operation. The optical article has one or more electrically conductive and selectively passivated patterns.

Abstract: An apparatus includes a manifold with a chamber for mixing multiple reactants. Gases are jetted into the manifold by a plurality of inlet injectors. The inlet injectors are arranged such that the gases passing into the manifold impinge on each other at a common point to form a mixture. The mixture passes through a plurality of holes in one side of the manifold into a deposition chamber where the mixture of gases impinges on additional gases at a common point to provide a reaction resulting in deposition of solid materials in the deposition chamber. The solid materials are free-standing.

Abstract: An apparatus includes a manifold with a chamber for mixing multiple reactants. Gases are jetted into the manifold by a plurality of inlet injectors. The inlet injectors are arranged such that the gases passing into the manifold impinge on each other at a common point to form a mixture. The mixture passes through a plurality of holes in one side of the manifold into a deposition chamber where the mixture of gases impinges on additional gases at a common point to provide a reaction resulting in deposition of solid materials in the deposition chamber. The solid materials are free-standing.

Abstract: An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.

Abstract: An optical article and method of making the same are provided. The optical article has optical multi-aperture operation. The optical article has one or more electrically conductive and selectively passivated patterns.

Abstract: Chemical vapor deposited silicon carbide articles and the methods of making them are disclosed. The chemical vapor deposited silicon carbide articles are composed of multiple parts which are joined together by sintered ceramic joints. The joints strengthen and maintain tolerances at the joints of the articles. The articles may be used in semi-conductor processing.

Abstract: An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is doped with a sufficient amount of nitrogen to provide the desired properties of the silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.

Abstract: An optical article and method of making the same are provided. The optical article has optical multi-aperture operation. The optical article has one or more electrically conductive and selectively passivated patterns.

Abstract: Semiconductor processing and equipment are disclosed. The semiconductor equipment and processing provide semiconductor wafers with reduced defects.

Abstract: Methods are disclosed for providing reduced particle generating silicon carbide. The silicon carbide articles may be used as component parts in apparatus used to process semiconductor wafers. The reduced particle generation during semiconductor processing reduces contamination on semiconductor wafers thus increasing their yield.

Abstract: Semiconductor processing and equipment are disclosed. The semiconductor equipment and processing provide semiconductor wafers with reduced defects.

Abstract: An optical article and method of making the same are provided. The optical article has optical multi-aperture operation. The optical article has one or more electrically conductive and selectively passivated patterns.