Abstract: A semiconductor radiation detector having a semiconductor substrate and first and second metal layers. The semiconductor substrate has substantially planar upper and lower opposing surfaces which have respective first and second surface areas. The first and second surface areas are defined by prospective dice lines. The first metal layer is on the substantially planar upper surface such that the first metal layer will have a surface area less than the first surface area of the substantially planar upper surface as defined by spaces on the substantially planar upper surface between the first metal layer and the prospective dice lines which define the first surface area. The second metal layer is on the substantially planar lower opposing surface.

Abstract: A semiconductor radiation detector having a semiconductor substrate and first and second metal layers. The semiconductor substrate has substantially planar upper and lower opposing surfaces which have respective first and second surface areas. The first and second surface areas are defined by prospective dice lines. The first metal layer is on the substantially planar upper surface such that the first metal layer will have a surface area less than the first surface area of the substantially planar upper surface as defined by spaces on the substantially planar upper surface between the first metal layer and the prospective dice lines which define the first surface area. The second metal layer is on the substantially planar lower opposing surface.

Abstract: A method of making a semiconductor radiation detector wherein the metal layers which serve as the cathode and anode electrodes are recessed from the designated prospective dice lines which define the total upper and lower surface areas for each detector such that the dicing blade will not directly engage the metal during dicing and therefore prevent metal from intruding upon (smearing) the vertical side walls of the detector substrate.

Abstract: A method of making a semiconductor radiation detector wherein the metal layers which serve as the cathode and anode electrodes are recessed from the designated prospective dice lines which define the total upper and lower surface areas for each detector such that the dicing blade will not directly engage the metal during dicing and therefore prevent metal from intruding upon (smearing) the vertical side walls of the detector substrate.

Abstract: In a method of annealing a Cd1-xZnxTe sample/wafer, surface contamination is removed from the sample/wafer and the sample/wafer is then introduced into a chamber. The chamber is evacuated and Hydrogen or Deuterium gas is introduced into the evacuated chamber. The sample/wafer is heated to a suitable annealing temperature in the presence of the Hydrogen or Deuterium gas for a predetermined period of time.

Abstract: In a method of annealing a Cd1?xZnxTe sample/wafer, surface contamination is removed from the sample/wafer and the sample/wafer is then introduced into a chamber. The chamber is evacuated and Hydrogen or Deuterium gas is introduced into the evacuated chamber. The sample/wafer is heated to a suitable annealing temperature in the presence of the Hydrogen or Deuterium gas for a predetermined period of time.

Abstract: A method of detecting radiation through which the residence time of charge carriers is dramatically reduced by an external optical energy source and the occupancy of the deep-level defects is maintained close to the thermal equilibrium of the un-irradiated device even under high-flux exposure conditions. Instead of relying on thermal energy to release the trapped carriers, infra-red light radiation is used to provide sufficient energy for the trapped carriers to escape from defect levels. Cd1-xZnxTe crystals are transparent to infra-red light of this energy and no additional absorption occurs other than the one associated with the ionization of the targeted deep-level defects. This allows irradiation geometry from the side source of the Cd1-xZnxTe detector crystals.

Abstract: A method of detecting radiation by which residence time of charge carriers is dramatically reduced by an external optical energy source and the occupancy of deep-level defects is maintained close to the thermal equilibrium of the un-irradiated device at any temperature. The energy of an infra-red light source is tuned within a predetermined band gap energy range and crystals are transparent to the infra-red light of the energy. Thus, other than the one associated with the ionization of the target deep-level defects, no other absorption occurs. Because of this low absorption, infra-red irradiation can be performed through any surface of the crystal that is transparent to the infra-red light which allows irradiation geometry from any side surface(s) of the detector crystals.

Abstract: An apparatus for preheating particulate material in which the particulate material is transferred from one or more upper storage bins to a circular lower chamber that has an outer, essentially annular, portion which serves as a gas flow passage. The particulate material is directed from the feed bin or bins into a plurality of essentially vertical cylindrical feed cassettes via intermediate feed ducts. The lower chamber has a flat roof which is in contact with the bottom portion of the vertical feed cassettes. The vertical feed cassettes are approximately evenly spaced on top of the outer perimeter of the flat roof. The particulate material is preheated in the annular flow passage by hot kiln gases flowing in countercurrent heat exchange relationship with the particulate material.