Abstract: A precision laser based method of marking semiconductor wafers, packages, substrates or similar workpieces is provided. The workpieces have articles which may include die, chip scale packages, circuit patterns and the like. The marking occurs in a workpiece marking system and within a designated region relative to an article position. The method includes determining at least one location from which reference data is to be obtained using (a) information from which a location of an article is defined, and (b) a vision model of at least a portion of at least one article. Reference data is obtained to locate a feature on a first side of (a second) workpiece using at least one signal from a first sensor. The method further includes positioning a marking field relative to the workpiece so as to position a laser beam at a marking location on a second side of the workpiece. The positioning is based on the feature location.

Abstract: A precision laser based method of marking semiconductor wafers, packages, substrates or similar workpieces is provided. The workpieces have articles which may include die, chip scale packages, circuit patterns and the like. The marking occurs in a workpiece marking system and within a designated region relative to an article position. The method includes determining at least one location from which reference data is to be obtained using (a) information from which a location of an article is defined, and (b) a vision model of at least a portion of at least one article. Reference data is obtained to locate a feature on a first side of (a second) workpiece using at least one signal from a first sensor. The method further includes positioning a marking field relative to the workpiece so as to position a laser beam at a marking location on a second side of the workpiece. The positioning is based on the feature location.