Patents by Inventor Michael Q. Hovish

Michael Q. Hovish has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming perovskite layers using atmospheric pressure plasma
    Patent number: 10636632
    Abstract: Improved deposition of optoelectronically active perovskite materials is provided with a two step process. In the first step, precursors are deposited on a substrate. In the second step, the deposited precursors are exposed to an atmospheric pressure plasma which efficiently cures the precursors to provide the desired perovskite thin film. The resulting films can have excellent optical properties combined with superior mechanical properties.
    Type: Grant
    Filed: January 18, 2018
    Date of Patent: April 28, 2020
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Florian Hilt, Michael Q. Hovish, Nicholas Rolston, Reinhold H. Dauskardt
  • Method for forming perovskite layers using atmospheric pressure plasma
    Publication number: 20180204709
    Abstract: Improved deposition of optoelectronically active perovskite materials is provided with a two step process. In the first step, precursors are deposited on a substrate. In the second step, the deposited precursors are exposed to an atmospheric pressure plasma which efficiently cures the precursors to provide the desired perovskite thin film. The resulting films can have excellent optical properties combined with superior mechanical properties.
    Type: Application
    Filed: January 18, 2018
    Publication date: July 19, 2018
    Inventors: Florian Hilt, Michael Q. Hovish, Nicholas Rolston, Reinhold H. Dauskardt