Patents by Inventor Michael R. Fahy

Michael R. Fahy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of stabilizing resist material through ion implantation
    Patent number: 6864144
    Abstract: A resist material used to mask an underlying layer during an etch process is subjected to ion implantation to harden the resist material against damage from the etch process. In a particular embodiment, the resist material is compatible with exposure to 193 nm radiation for patterning the resist material.
    Type: Grant
    Filed: May 30, 2002
    Date of Patent: March 8, 2005
    Assignee: Intel Corporation
    Inventors: Christopher Kenyon, Michael R. Fahy, Gerard T. Zietz
  • Stabilization of resist material through ion implantation
    Publication number: 20030222345
    Abstract: A resist material used to mask an underlying layer during an etch process is subjected to ion implantation to harden the resist material against damage from the etch process. In a particular embodiment, the resist material is compatible with exposure to 193 nm radiation for patterning the resist material.
    Type: Application
    Filed: May 30, 2002
    Publication date: December 4, 2003
    Inventors: Christopher Kenyon, Michael R. Fahy, Gerard T. Zietz
  • Method of substrate processing and photoresist exposure
    Patent number: 6649529
    Abstract: A method is described for improving the exposure focus for modern steppers used in the lithography of semiconductor substrates such as wafers. A wafer is sawed from a semiconductor ingot in a particular direction relative to a reference point on the ingot. As a result of the sawing, a series of raised and recessed formations manifest on the surface of the wafer. After various layers have been added to the wafer and the photoresist layer is ready to be removed, the wafer is aligned with the stepper so that a dynamic focus area of the stepper is aligned with the formations and/or the sawing direction. Such alignment improves the critical dimension control and reduces variability in printing small geometry features during lithography, resulting in higher yields.
    Type: Grant
    Filed: August 15, 2001
    Date of Patent: November 18, 2003
    Assignee: Intel Corporation
    Inventors: Mehran Aminzadeh, Michael R. Fahy
  • Method of substrate processing and photoresist exposure
    Publication number: 20030036281
    Abstract: A method is described for improving the exposure focus for modern steppers used in the lithography of semiconductor substrates such as wafers. A wafer is sawed from a semiconductor ingot in a particular direction relative to a reference point on the ingot. As a result of the sawing, a series of raised and recessed formations manifest on the surface of the wafer. After various layers have been added to the wafer and the photoresist layer is ready to be removed, the wafer is aligned with the stepper so that a dynamic focus area of the stepper is aligned with the formations and/or the sawing direction. Such alignment improves the critical dimension control and reduces variability in printing small geometry features during lithography, resulting in higher yields.
    Type: Application
    Filed: August 15, 2001
    Publication date: February 20, 2003
    Inventors: Mehran Aminzadeh, Michael R. Fahy