Patents by Inventor Michael R. Feldbaum
Michael R. Feldbaum has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11644435Abstract: A DNA sequencing device and methods of making. The device includes a pair of electrodes having a spacing of no greater than about 2 nm, the electrodes being exposed within a nanopore to measure a DNA strand passing through the nanopore. The device can be made by depositing a conductive layer over a sacrificial channel and then removing the sacrificial channel to form the electrode gap.Type: GrantFiled: April 10, 2020Date of Patent: May 9, 2023Assignee: SEAGATE TECHNOLOGY LLCInventors: ShuaiGang Xiao, David S. Kuo, Xiaomin Yang, Kim Yang Lee, Yautzong Hsu, Michael R. Feldbaum
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Publication number: 20200240947Abstract: A DNA sequencing device and methods of making. The device includes a pair of electrodes having a spacing of no greater than about 2 nm, the electrodes being exposed within a nanopore to measure a DNA strand passing through the nanopore. The device can be made by depositing a conductive layer over a sacrificial channel and then removing the sacrificial channel to form the electrode gap.Type: ApplicationFiled: April 10, 2020Publication date: July 30, 2020Inventors: ShuaiGang XIAO, David S. KUO, Xiaomin YANG, Kim Yang LEE, Yautzong HSU, Michael R. FELDBAUM
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Publication number: 20180259475Abstract: A DNA sequencing device, and related method, which include a nanopore having a maximum width dimension of no greater than about 50 nm, and a pair of electrodes having a spacing of no greater than about 2 nm, the electrodes being exposed within the nanopore to measure a DNA strand passing through the nanopore.Type: ApplicationFiled: February 1, 2018Publication date: September 13, 2018Applicant: SEAGATE TECHNOLOGY LLCInventors: ShuaiGang XIAO, David S. KUO, Xiaomin YANG, Kim Yang LEE, Yautzong HSU, Michael R. FELDBAUM
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Patent number: 9809887Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.Type: GrantFiled: February 24, 2016Date of Patent: November 7, 2017Assignee: Seagate Technology LLCInventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Kim Yang Lee, Li-Ping Wang
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Patent number: 9683295Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.Type: GrantFiled: May 24, 2016Date of Patent: June 20, 2017Assignee: Seagate Technology LLCInventors: Michael R. Feldbaum, Koichi Wago, Gennady Gauzner, Kim Y. Lee, David S. Kuo
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Patent number: 9605348Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.Type: GrantFiled: May 20, 2016Date of Patent: March 28, 2017Assignee: Seagate Technology LLCInventors: Michael R. Feldbaum, Koichi Wago, Gennady Gauzner, Kim Y. Lee, David S. Kuo
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Publication number: 20160265119Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.Type: ApplicationFiled: May 24, 2016Publication date: September 15, 2016Inventors: Michael R. Feldbaum, Koichi Wago, Gennady Gauzner, Kim Y. Lee, David S. Kuo
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Publication number: 20160266493Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.Type: ApplicationFiled: May 20, 2016Publication date: September 15, 2016Inventors: Michael R. Feldbaum, Koichi Wago, Gennady Gauzner, Kim Y. Lee, David S. Kuo
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Patent number: 9370907Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.Type: GrantFiled: March 20, 2014Date of Patent: June 21, 2016Assignee: Seagate Technology LLCInventors: Michael R. Feldbaum, Koichi Wago, Gennady Gauzner, Kim Y. Lee, David S. Kuo
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Publication number: 20160168723Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.Type: ApplicationFiled: February 24, 2016Publication date: June 16, 2016Inventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Kim Yang Lee, Li-Ping Wang
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Patent number: 9330885Abstract: The embodiments disclose a method of stack patterning, including loading a stack into a stationary stack stage, rotating one or more ion beam grid assemblies substantially concentrically aligned with the stationary stack stage to etch the stack and controlling the operation of the one or more ion beam grid assemblies to achieve substantial axial uniformity of the etched stack.Type: GrantFiled: June 30, 2011Date of Patent: May 3, 2016Assignee: Seagate Technology LLCInventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Li-Ping Wang
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Patent number: 9299380Abstract: Provided herein is a method including oxidizing tops of features of a patterned magnetic layer to form oxidized tops of the features; removing an excess of an applied first protective material down to at least the oxidized tops of the features to form a planarized layer; and applying a second protective material over the planarized layer.Type: GrantFiled: October 24, 2013Date of Patent: March 29, 2016Assignee: Seagate Technology LLCInventors: Michael R. Feldbaum, Koichi Wago, Bin Lu, David S. Kuo
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Patent number: 9284649Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.Type: GrantFiled: June 30, 2011Date of Patent: March 15, 2016Assignee: Seagate Technology LLCInventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Kim Yang Lee, Li-Ping Wang
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Publication number: 20150266233Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.Type: ApplicationFiled: March 20, 2014Publication date: September 24, 2015Applicant: SEAGATE TECHNOLOGY LLCInventors: Michael R. Feldbaum, Koichi Wago, Gennady Gauzner, Kim Y. Lee, David S. Kuo
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Publication number: 20150017483Abstract: Provided herein is a method including oxidizing tops of features of a patterned magnetic layer to form oxidized tops of the features; removing an excess of an applied first protective material down to at least the oxidized tops of the features to form a planarized layer; and applying a second protective material over the planarized layer.Type: ApplicationFiled: October 24, 2013Publication date: January 15, 2015Applicant: Seagate Technology LLCInventors: Michael R. Feldbaum, Wago Wago, Bin Lu, David S. Kuo
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Publication number: 20130004763Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.Type: ApplicationFiled: June 30, 2011Publication date: January 3, 2013Applicant: SEAGATE TECHNOLOGY, LLCInventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Kim Yang Lee, Li-Ping Wang
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Publication number: 20130001188Abstract: The embodiments disclose a method to protect magnetic bits during carbon field planarization, including depositing a stop layer upon magnetic bits and magnetic film of a patterned stack, depositing a carbon fill layer on the stop layer and using the stop layer during planarization and etch-back of the carbon field to protect the patterned stack magnetic bits during the carbon field planarization.Type: ApplicationFiled: June 30, 2011Publication date: January 3, 2013Applicant: SEAGATE TECHNOLOGY, LLCInventors: David Kuo, Michael R. Feldbaum, Paritosh Rajora, Hieu Lam
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Publication number: 20130001195Abstract: The embodiments disclose a method of stack patterning, including loading a stack into a stationary stack stage, rotating one or more ion beam grid assemblies substantially concentrically aligned with the stationary stack stage to etch the stack and controlling the operation of the one or more ion beam grid assemblies to achieve substantial axial uniformity of the etched stack.Type: ApplicationFiled: June 30, 2011Publication date: January 3, 2013Applicant: SEAGATE TECHNOLOGY, LLCInventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Li-Ping Wang
