Abstract: In one embodiment, a physical vapor deposition device includes a phase change material sputtering target includes a primary matrix and at least one additional phase. The primary matrix includes at least one element from Group VI of the periodic table excluding oxygen and one or more elements from Group IV or Group V of the periodic table. The additional phase is substantially homogenously dispersed in the primary matrix.

Abstract: In one embodiment, a physical vapor deposition device includes a phase change material sputtering target includes a primary matrix and at least one additional phase. The primary matrix includes at least one element from Group VI of the periodic table excluding oxygen and one or more elements from Group IV or Group V of the periodic table. The additional phase is substantially homogenously dispersed in the primary matrix.

Abstract: A method of forming a high strength aluminum alloy. The method comprises heating an aluminum material including scandium to a solutionizing temperature of the aluminum material such that scandium is dispersed throughout the aluminum material to form an aluminum alloy. The method further comprises extruding the aluminum alloy with equal channel angular extrusion to form a high strength aluminum alloy, such that the high strength aluminum alloy has a yield strength greater than about 40 ksi after being at a temperature from about 300° C. to about 400° C. for at least one hour.

Abstract: In one embodiment, a physical vapor deposition device includes a phase change material sputtering target includes a primary matrix and at least one additional phase. The primary matrix includes at least one element from Group VI of the periodic table excluding oxygen and one or more elements from Group IV or Group V of the periodic table. The additional phase is substantially homogenously dispersed in the primary matrix.

Abstract: A method of forming a high strength copper alloy. The method comprises heating a copper material including from about 2 wt. % to about 20 wt. % manganese by weight of the copper material to a temperature above 400° C., allowing the copper material to cool to a temperature from about 325° C. to about 350° C. to form a cooled copper material, and extruding the cooled copper material with equal channel angular extrusion to form a cooled copper manganese alloy.

Abstract: A solder wire composition may include 85 to 95 weight percent bismuth, and at least 5 weight percent copper. The solder wire composition may have a diameter of less than about 1 millimeter, and an elongation at break of at least 20%.

Abstract: A method of forming a high strength copper alloy. The method comprises heating a copper material including from about 2 wt. % to about 20 wt. % manganese by weight of the copper material to a temperature above 400° C., allowing the copper material to cool to a temperature from about 325° C. to about 350° C. to form a cooled copper material, and extruding the cooled copper material with equal channel angular extrusion to form a cooled copper manganese alloy.

Abstract: A solder wire composition may include 85 to 95 weight percent bismuth, and at least 5 weight percent copper. The solder wire composition may have a diameter of less than about 1 millimeter, and an elongation at break of at least 20%.

Abstract: A solder wire composition may include 85 to 95 weight percent bismuth, and at least 5 weight percent copper. The solder wire composition may have a diameter of less than about 1 millimeter, and an elongation at break of at least 20%.

Abstract: A reference standard for calibrating an ultrasonic scanning apparatus comprising a first portion comprising a first material, a first face, and a second face opposite the first face. The reference standard also has a second portion comprising a second material, a first face, and a second face opposite the first face. The second face of the second portion is adjacent the first face of the first portion and forms an interface. The reference standard also includes a reference material extending axially through the first face of the first portion and the second face of the second portion. The first portion and second portion are configured to enclose the reference material such that the calibration standard is void free at an interface between the first material and the reference material and at an interface between the second material and the reference material.

Abstract: A method of forming a high strength aluminum alloy. The method comprises heating an aluminum material including scandium to a solutionizing temperature of the aluminum material such that scandium is dispersed throughout the aluminum material to form an aluminum alloy. The method further comprises extruding the aluminum alloy with equal channel angular extrusion to form a high strength aluminum alloy, such that the high strength aluminum alloy has a yield strength greater than about 40 ksi after being at a temperature from about 300° C. to about 400° C. for at least one hour.

Abstract: In one embodiment, a physical vapor deposition device includes a phase change material sputtering target includes a primary matrix and at least one additional phase. The primary matrix includes at least one element from Group VI of the periodic table excluding oxygen and one or more elements from Group IV or Group V of the periodic table. The additional phase is substantially homogenously dispersed in the primary matrix.

Abstract: A solder wire composition may include 85 to 95 weight percent bismuth, and at least 5 weight percent copper. The solder wire composition may have a diameter of less than about 1 millimeter, and an elongation at break of at least 20%.

Abstract: A solder may include zinc, aluminum, magnesium and gallium. The zinc may be present in an amount from about 82% to 96% by weight of the solder. The aluminum may be present in an amount from about 3% to about 15% by weight of the solder. The magnesium may be present in an amount from about 0.5% to about 1.5% by weight of the solder. The gallium may be present in an amount between about 0.5% to about 1.5% by weight of the solder.

Abstract: A solder may include zinc, aluminum, magnesium and gallium. The zinc may be present in an amount from about 82% to 96% by weight of the solder. The aluminum may be present in an amount from about 3% to about 15% by weight of the solder. The magnesium may be present in an amount from about 0.5% to about 1.5% by weight of the solder. The gallium may be present in an amount between about 0.5% to about 1.5% by weight of the solder.

Abstract: A chalcogenide compound synthesis method includes homogeneously mixing solid particles and, during the mixing, imparting kinetic energy to the particle mixture, heating the particle mixture, alloying the elements, and forming alloyed particles containing the compound. Another chalcogenide compound synthesis method includes, under an inert atmosphere, melting the particle mixture in a heating vessel, removing the melt from the heating vessel, placing the melt in a quenching vessel, and solidifying the melt. The solidified melt is reduced to alloyed particles containing the compound. An alloy casting apparatus includes an enclosure, a heating vessel, a flow controller, a collection pan and an actively cooled quench plate. The heating vessel has a bottom-pouring orifice and a pour actuator. The flow controller operates the pour actuator from outside the enclosure. The quench plate is positioned above a bottom of the collection pan and below the bottom-pouring orifice.

Abstract: The invention includes container-shaped physical vapor deposition targets having a first conductive material in a container-shape and a second conductive material on an entirety of an exterior surface of the first conductive material. The second conductive material has a different composition than the first conductive material.

Abstract: Described is a fibrous thermal interface. The interface comprises flocked thermally conductive fibers embedded in an adhesive in substantially vertical orientation with portions of the fibers extending out of the adhesive. An encapsulant fills spaces between the portions of the fibers that extend out of the adhesive and beneath the free tips of the fibers.

Abstract: Described is a transferrable fibrous thermal interface. The interface comprises flocked thermally conductive fibers embedded in an adhesive in substantially vertical orientation with portions of the fibers extending out of the adhesive. An encapsulant fills spaces between the portions of the fibers that extend out of the adhesive and a release liner is on at least one outer surface of the interface.

Abstract: The invention encompasses a method of forming a container-shaped physical vapor deposition target. A conductive material is provided in a container-shape. The container-shape comprises an interior region and an exterior region, and the conductive material comprises an interior surface along the interior region as well as an exterior surface along the exterior region. A sputtering material is electrolytically deposited on at least one of the interior and exterior surfaces of the container-shaped conductive material. The invention also encompasses a container-shaped physical vapor deposition target. The target includes a first conductive material in a container-shape, with the container-shape comprising an interior region and an exterior region. The first conductive material comprises an interior surface along the interior region of the container-shape and an exterior surface along the exterior region of the container shape.