Abstract: Disclosed are novel amino acid derivatives of formula (I) and (II) processes for the preparation thereof, and their use in the preparation of trans-5-chloro-2-methyl-2,3,3a,12b-tetrahydro-1H-dibenz[2,3:6,7]oxepino-[4,5-c]pyrrole.

Abstract: Disclosed are novel amino acid derivatives of formula (I) and (II) processes for the preparation thereof, and their use in the preparation of trans-5-chloro-2-methyl-2,3,3a,12b-tetrahydro-1H-dibenz[2,3:6,7]oxepino-[4,5-c]pyrrole.

Abstract: This application discloses a novel process to synthesize 2-(Quinolin-5yo)-4,5-Disubstituted-Azole derivatives, which may be used, for example, as PDE IV inhibitor compounds in pharmaceutical preparations.

Abstract: Disclosed are novel amino acid derivatives of formula (I) and (II) processes for the preparation thereof, and their use in the preparation of trans-5-chloro-2-methyl-2,3,3a,12b-tetrahydro-1H-dibenz[2,3:6,7]oxepino-[4,5-c]pyrrole.

Abstract: The present invention relates to the compound of the formula To methods of treating upper and lower obstructive airway diseases using said compound, to formulations comprising it, and to polymorphs and processes of synthesis of the polymorphic forms.

Abstract: Disclosed are novel amino acid derivatives of formula (I) and (II) processes for the preparation thereof, and their use in the preparation of trans-5-chloro-2-methyl-2,3,3a,12b-tetrahydro-1H-dibenz[2,3:6,7]oxepino-[4,5-c]pyrrole.

Abstract: The present invention relates a process for the preparation of a compound of the formula: wherein R1, R2, R6, R9 and R10 are as described herein. The compounds are inhibitors of phosphodiesterase 4 (PDE4).

Abstract: Disclosed are novel amino acid derivatives of formula (I) and (II) processes for the preparation thereof, and their use in the preparation of trans-5-chloro-2-methyl-2,3,3a,12b-tetrahydro-1H-dibenz[2,3:6,7]oxepino-[4,5-c]pyrrole.

Abstract: Disclosed are intermediates and processes for preparing epoxides of the formula: where R and PROT are defined herein. These epoxides are useful as intermediates in the production of biologically active compounds, i.e., in the production of pharmaceutical agents.

Abstract: Disclosed are intermediates and processes for preparing epoxides of the formula: where R and PROT are defined herein. These epoxides are useful as intermediates in the production of biologically active compounds, i.e., in the production of pharmaceutical agents.

Abstract: Disclosed are compounds of formula III and a process to prepare a compound of formula III wherein R1, R2, R3 and R6 are defined herein, using a zinc chloride/optionally substituted oxazole adduct and an compound of formula I. Further disclosed are methods of using compounds of formula III to prepare compounds useful in the treatment of Alzheimer's disease and related conditions.

Abstract: Disclosed are intermediates and processes for preparing epoxides of the formula: where R and PROT are defined herein. These epoxides are useful as intermediates in the production of biologically active compounds, i.e., in the production of pharmaceutical agents.

Abstract: Disclosed are compounds of formula III and a process to prepare a compound of formula III 1

Abstract: Disclosed are intermediates and processes for preparing epoxides of the formula: 1

Abstract: An antifuse includes a metal cap layer located at the second barrier layer of the antifuse to improve the antifuse yield and long term reliability. An antifuse further includes one or more interfacial oxide film layers surrounding an antifuse dielectric layer to provide narrowing of the antifuse programming voltage distribution and to further improve the antifuse yield and long term reliability.

Abstract: A process of manufacturing selectively restructurable conductive links between circuit elements and corresponding spare elements on a semiconductor. A continuous green light laser directed at a non-conductive amorphous region in the links causes the region to recrystallize. This makes the link electrically conductive thereby joining the circuit elements to a corresponding spare element on the semiconductor. The method permits for high density packing of circuit elements and creates a link without producing bulk material movement.

Abstract: A process is described for anisotropically etching semiconductor products which include a lower dielectric layer, an intermediate polysilicon layer, and an upper silicide layer such as titanium silicide. A pattern-defining layer will normally overlie the silicide layer to define target areas to be etched. In a first step, the silicide is etched through using Freon 115 chloro, pentafluoroethane (C.sub.2 ClF.sub.5) in a plasma etching chamber conditioned to provide a reactive ion etch. The etch is completed in the same chamber using a second gas which includes an amount of Cl.sub.2 selected to etch anisotropically through the polysilicon layer without substantially etching the dielectric layer. Preferably, both etches occur after covering inner surfaces of the etching chamber with a material which releases molecules of the character included in the pattern-defining layer, such as Kapton, a polymide, in the disclosed example.