Abstract: A method for forming chamferless vias comprises receiving a substrate stack comprising a hard mask layer, a porous dielectric layer underlying the hard mask layer, a cap layer underlying the dielectric layer, and a conductive layer underlying the cap layer. The hard mask layer is opened to reveal a portion of the dielectric layer. A plurality of vias are opened to extend through the dielectric layer and the cap layer. A pore filling material comprising a thermally decomposable polymer is deposited into the vias. The pore filling material in the vias is hardened and driven into the pores of the dielectric layer adjacent to the vias by an annealing process. The hard mask layer is removed. A trench is patterned and etched coincident with the vias. A dissipation process is conducted to remove the pore filling material.

Abstract: Liquid-cooled electronics apparatuses and methods are provided. The cooled electronics apparatuses include a liquid-cooled cold rail and an electronics subassembly. The liquid-cooled cold rail has a thermally conductive structure and a coolant-carrying channel extending within and cooling the thermally conductive structure. The electronics subassembly includes an electronics card(s) and one or more thermal transfer plates. The electronics card(s) includes electronic devices to be cooled, and the one or more thermal transfer plates are each rigidly affixed to one or more electronic devices of the electronics card(s). Each thermal transfer plate is thermally conductive and couples the electronics subassembly to the liquid-cooled cold rail to thermally interface the one or more electronic devices to the liquid-cooled cold rail to facilitate cooling of the electronic devices. In one embodiment, the electronics subassembly includes multiple interleaved electronics cards and thermal transfer plates.