Abstract: A system and method for enabling the estimation and mitigation of self-heating in chip designs at a much earlier stage in a design flow. The system and method provides unique characterization of each standard cell in a library for its effective thermal resistance based on the topology and layout of the cell, and brings this per standard cell instance based delta-T to be available for the timing closure tools when completing a synthesized design. Thus, at the timing closure process, the generated design is free of self heating violations. The method computes a unique thermal resistance characterization on per standard cell manner—based on the topology, function and layout of the standard cell, and uses that to compute the deltaT per instance of the design. This information is presented to a violation mitigation tool which changes the power levels of the cells, logic function to mitigate the self heating violations.

Abstract: A system and method for enabling the estimation and mitigation of self-heating in chip designs at a much earlier stage in a design flow. The system and method provides unique characterization of each standard cell in a library for its effective thermal resistance based on the topology and layout of the cell, and brings this per standard cell instance based delta-T to be available for the timing closure tools when completing a synthesized design. Thus, at the timing closure process, the generated design is free of self heating violations. The method computes a unique thermal resistance characterization on per standard cell manner—based on the topology, function and layout of the standard cell, and uses that to compute the deltaT per instance of the design. This information is presented to a violation mitigation tool which changes the power levels of the cells, logic function to mitigate the self heating violations.

Abstract: A method is provided for managing power distribution on a three-dimensional chip stack having two or more strata, a plurality of vertical power delivery structures, and multiple stack components. At least two stack components are on different strata. Operating modes are stored that respectively have different power dissipations. A respective effective power budget is determined for each of the at least two stack components based on respective ones of the operating modes targeted therefor, and power characteristics and thermal characteristics of at least some of the stack components inclusive or exclusive of the at least two stack components. The respective ones of the plurality of operating modes targeted for the at least two stack components are selectively accepted or re-allocated based on the respective effective power budget for each of the at least two stack components, power constraints, and thermal constraints. The power constraints include vertical structure electrical constraints.

Abstract: There is provided a connection configuration for a multiple layer chip stack having two or more strata. Each of the two or more strata has multiple circuit components, a front-side and a back-side. The connection configuration includes a connection pair having as members a front-side connection and a backside connection unconnected to the front-side connection. The front-side connection and the backside connection are co-located with respect to each other on a given stratum from among the two or more strata, and are respectively connected to different ones of the multiple circuit components on the given stratum. At least one of the front-side connection and the backside connection is also connected to a particular one of the multiple circuit components on an adjacent stratum to the given stratum from among the two or more strata.

Abstract: There is provided a method for verifying inter-stratum connectivity for two or more strata to be combined into a 3D chip stack. Each of the two or more strata has 3D elements including active 3D elements, mechanical 3D elements, and dummy 3D elements. The method includes performing a respective 2D layout versus schematic verification on each of the two or more strata with respect to at least the 3D elements to pre-ensure an absence of shorts between the 3D elements when the two or more strata are subsequently stacked into the 3D chip stack. The method further includes checking inter-stratum interconnectivity between each adjacent pair of strata in the 3D chip stack.

Abstract: A method is provided for managing power distribution on a 3D chip stack having two or more strata, a plurality of vertical power delivery structures, and multiple stack components. At least two stack components are on different strata. Operating modes are stored that respectively have different power dissipations. A respective effective power budget is determined for each of the at least two stack components based on respective ones of the operating modes targeted therefor, and power characteristics and thermal characteristics of at least some of the stack components inclusive or exclusive of the at least two stack components. The respective ones of the plurality of operating modes targeted for the at least two stack components are selectively accepted or re-allocated based on the respective effective power budget for each of the at least two stack components, power constraints, and thermal constraints. The power constraints include vertical structure electrical constraints.

Abstract: There is provided a connection configuration for a multiple layer chip stack having two or more strata. Each of the two or more strata has multiple circuit components, a front-side and a back-side. The connection configuration includes a connection pair having as members a front-side connection and a backside connection unconnected to the front-side connection. The front-side connection and the backside connection are co-located with respect to each other on a given stratum from among the two or more strata, and are respectively connected to different ones of the multiple circuit components on the given stratum. At least one of the front-side connection and the backside connection is also connected to a particular one of the multiple circuit components on an adjacent stratum to the given stratum from among the two or more strata.

Abstract: There is provided a method for verifying inter-stratum connectivity for two or more strata to be combined into a 3D chip stack. Each of the two or more strata has 3D elements including active 3D elements, mechanical 3D elements, and dummy 3D elements. The method includes performing a respective 2D layout versus schematic verification on each of the two or more strata with respect to at least the 3D elements to pre-ensure an absence of shorts between the 3D elements when the two or more strata are subsequently stacked into the 3D chip stack. The method further includes checking inter-stratum interconnectivity between each adjacent pair of strata in the 3D chip stack.

Abstract: A mechanism is provided for protecting a layer of functional units from side-channel attacks. A determination is made as to whether one or more subsets of functional units in a set of functional units in the layer of functional units is performing operations of a critical nature. Responsive to a determination that there is one or more subsets of functional units that are performing the operations of the critical nature, at least one concealing pattern is generated in a concealing layer in order to conceal the operations of the critical nature being performed by each of the subset of functional units. The concealing layer is electrically and physically coupled to the layer of functional units.

Abstract: A method for pre-wiring through multiple levels of metal using flues includes steps of: receiving information comprising flue geometries and flue properties; producing multiple routing patterns of a design for the flues; identifying macro instance terminals to be pre-wired in the design; selecting at least one of the routing patterns for the macro instance terminals in the design to avoid blockage; and instantiating the design such that the flues can be manipulated as vias.

Abstract: A method for pre-wiring through multiple levels of metal using flues includes steps of: receiving information comprising flue geometries and flue properties; producing multiple routing patterns of a design for the flues; identifying macro instance terminals to be pre-wired in the design; selecting at least one of the routing patterns for the macro instance terminals in the design to avoid blockage; and instantiating the design such that the flues can be manipulated as vias.

Abstract: Silicon-VLSI-compatible photodetectors, in the form of a metal-semiconductor-metal photodetector (MSM-PD) or a lateral p-i-n photodetector (LPIN-PD), are disclosed embodying interdigitated metallic electrodes on a silicon surface. The electrodes of the MSM-PD have a moderate to high electron and hole barrier height to silicon, for forming the Schottky barriers, and are fabricated so as to be recessed in the surface semiconducting layer of silicon through the use of self-aligned metallization either by selective deposition or by selective reaction and etching, in a manner similar to the SALICIDE concept. Fabrication is begun by coating the exposed Si surface of a substrate with a transparent oxide film, such that the Si/oxide interface exhibits low surface recombination velocity.

Abstract: Certain organic polymeric materials are capable of reversibly accepting or donating electrons from a reducing entity. The redox sites in the polymer accept electrons and, as a result, a change in the properties of the polymer occurs. This change is useful in modifying or etching the polymeric material The material can be modified by incorporation of metallic seeds into the material at a controlled depth. The seeds are incorporated by interaction of cations of the metals with the redox sites in the polymer, which cause the reduction of the cations to form the neutral metallic seeds. Subsequent exposure of the polymeric material containing the seeds to an electroless bath causes further deposition of metal having the desirable characteristic of good adhesion to the polymeric material. Etching of the polymeric material can be carried out as a result of an increase in solubility of the polymer in aprotic solvents when its redox sites have accepted electrons.

Abstract: A thin interface pellicle probe for making temporary or permanent interconnections to pads or bumps on a semiconductor device wherein the pads or bumps may be arranged in high density patterns is described incorporating an electrode for each pad or bump wherein the electrode has a raised portion thereon for penetrating the surface of the pad or bump to create sidewalls to provide a clean contact surface and the electrode has a recessed surface to limit the penetration of the raised portion. The electrodes may be affixed to a thin flexible membrane to permit each contact to have independent movement over a limited distance and of a limited rotation. The invention overcomes the problem of making easily breakable electrical interconnections to high density arrays of pads or bumps on integrated circuit structures for testing, burn-in or package interconnect and testing applications.

Abstract: A testing or sampling probe to determine the response of electrical circuits or devices to ultrafast electrical pulses. The probe is detachable from the device being tested. The probe includes a transparent substrate though which optical pulses are focused or directed onto a photoconducting gap. The probe further includes a transmission line associated with the photoconductive gap, and which terminates at a tapered end of the probe in contacts which are placed on the device under test.