Abstract: A light emitting diode (100 or 150) includes a diode structure containing a quantum well (120), an enhancement layer (142), and a barrier layer (144 or 148) between the enhancement layer (142) and the quantum well (120). The enhancement layer (142) supports plasmon oscillations at a frequency that couples to photons produced by combination of electrons and holes in the quantum well (120). The barrier layer serves to block diffusion between the enhancement layer (142) and the diode structure.

Abstract: A device contains a first layer, a second layer; and a membrane between the first and second layers. Mobile ions are in at least one of the first and second layers, and the membrane is permeable to the ions. Interfaces of the conductive membrane with the first layer and the second layer are such that charge of a polarity of the ions collects at the interfaces.

Abstract: A system employs a flexible optical media, two connectors, and a mechanism such as a magnet that brings the connector together when the connectors are close to each other. The optical media is able to guide optical signals, and one connector is attached to an end of the optical media. Each connector also has alignment features and provides paths for the optical signals. The alignment features of each connector are shaped to mate with the alignment features of the other connector and to shift the connectors relative to each other as the mechanism pushes the connector together. The alignment features further have seated positions at which the paths in one connector are aligned with the paths in the other connector and separated by a free space gap.

Abstract: Systems and methods employ a layer having a pattern that provides multiple discrete guided mode resonances for respective couplings of separated wavelengths into the layer. Further, a structure including features shaped to enhance Raman scattering to produce light of the resonant wavelengths can be employed with the patterned layer.

Abstract: A device contains a first layer (420), a second layer (440); and a membrane (430) between the first and second layers (420, 440). Mobile ions (425) are in at least one of the first and second layers (420, 440), and the membrane (430) is permeable to the ions. Interfaces of the conductive membrane (430) with the first layer (420) and the second layer (440) are such that charge of a polarity of the ions (425) collects at the interfaces.

Abstract: In accordance with an aspect of the invention, a system has a transmitter and a receiver, where the transmitter includes a beam source and an optical element. The beam source produces a beam that represents information, and the optical element alters the beam so that the beam has a uniform intensity over a cross-sectional area. The receiver is separated from the transmitter by free space through which the beam propagates and includes an active area positioned to receive a portion of the beam that the receiver converts into a received signal. To accommodate possible misalignment, the cross-sectional area of the beam is larger than the active area by an amount that accommodates a range of misalignment of the receiver with the transmitter.

Abstract: Systems and methods employ a layer having a pattern that provides multiple discrete guided mode resonances for respective couplings of separated wavelengths into the layer. Further, a structure including features shaped to enhance Raman scattering to produce light of the resonant wavelengths can be employed with the patterned layer.

Abstract: A light emitting diode (100 or 150) includes a diode structure containing a quantum well (120), an enhancement layer (142), and a barrier layer (144 or 148) between the enhancement layer (142) and the quantum well (120). The enhancement layer (142) supports plasmon oscillations at a frequency that couples to photons produced by combination of electrons and holes in the quantum well (120). The barrier layer serves to block diffusion between the enhancement layer (142) and the diode structure.

Abstract: A light-emitting device that includes an LED and a light extraction layer and the method for making the same are disclosed. The LED includes a substrate on which an active layer is sandwiched between a p-type layer and an n-type layer, the active layer generating light in a band of wavelengths about a central wavelength when holes and electrons recombine therein. The n-type layer, active layer, and p-type layer are formed on the substrate. First and second electrodes for providing a potential difference between the p-type layer and the n-type layer are included in the LED. The light extraction layer includes a clear layer of material having a first surface in contact with a surface of the LED and a second surface having light scattering features with dimensions greater than 0.5 times the central wavelength. The material of the clear layer can be polycrystalline or amorphous.

Abstract: A method for high-volume production of light emitting diodes with attached lenses involves providing pre-fabricated lenses, wherein the pre-fabricated lenses are held by a common transfer structure, simultaneously attaching the pre-fabricated lenses to respective ones of light emitting diodes, and releasing the pre-fabricated lenses from the common transfer structure. In an embodiment, the light emitting diodes are distributed in a pattern on a common substrate and the common transfer structure is configured to hold the pre-fabricated lenses in a pattern that corresponds to the pattern of the light emitting diodes on the common substrate. Further, to attach the pre-fabricated lenses to the light emitting diodes, the common transfer structure is positioned relative to the common substrate such that the pre-fabricated lenses are aligned with the light emitting diodes.

Abstract: In accordance with the invention, increased maximum modulation speeds and improved hole distribution are obtained for light emitting devices. Barrier layers of a quantum well structure for a light emitting device are formed with varying barrier energy heights. Quantum well layers of the quantum well structure are formed between the barrier layers.

Abstract: Vehicle-based lidar systems and methods are disclosed using multiple lasers to provide more compact and cost-effective lidar functionality. Each laser in an array of lasers can be sequentially activated so that a corresponding optical element mounted with respect to the array of lasers produces respective interrogation beams in substantially different directions. Light from these beams is reflected by objects in a vehicle's environment, and detected so as to provide information about the objects to vehicle operators and/or passengers.

Abstract: The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.

Abstract: The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.

Abstract: In accordance with an aspect of the invention, a system has a transmitter and a receiver, where the transmitter includes a beam source and an optical element. The beam source produces a beam that represents information, and the optical element alters the beam so that the beam has a uniform intensity over a cross-sectional area. The receiver is separated from the transmitter by free space through which the beam propagates and includes an active area positioned to receive a portion of the beam that the receiver converts into a received signal. To accommodate possible misalignment, the cross-sectional area of the beam is larger than the active area by an amount that accommodates a range of misalignment of the receiver with the transmitter.

Abstract: Double well structures in electro-absorption modulators are created in quantum well active regions by embedding deep ultra thin quantum wells. The perturbation introduced by the embedded, deep ultra thin quantum well centered within a conventional quantum well lowers the confined energy state for the wavefunction in the surrounding larger well and typically results in the hole and electron distributions being more confined to the center of the conventional quantum well. The extinction ratio provided by the electro-absorption modulator is typically increased.

Abstract: A light generating device such as a VCSEL includes a light generation layer, a top reflector, a bottom reflector, and a high thermal conductivity (HTC) layer between the light generation layer and the bottom reflector. The light generation layer is adapted to generate light having a first wavelength. Heat produced at the light generation layer is more efficiently dissipated due to the presence of the HTC layer. Alternatively, a light generating device such as a VCSEL includes a light generation layer, a top reflector, and a high thermal conductivity (HTC) bottom reflector. Heat produced at the light generation layer is more efficiently dissipated due to the fact that the bottom reflector is a HTC DBR reflector having lower thermal resistivity than a conventional DBR reflector.

Abstract: A light-emitting device that includes an LED and a light extraction layer and the method for making the same are disclosed. The LED includes a substrate on which an active layer is sandwiched between a p-type layer and an n-type layer, the active layer generating light in a band of wavelengths about a central wavelength when holes and electrons recombine therein. The n-type layer, active layer, and p-type layer are formed on the substrate. First and second electrodes for providing a potential difference between the p-type layer and the n-type layer are included in the LED. The light extraction layer includes a clear layer of material having a first surface in contact with a surface of the LED and a second surface having light scattering features with dimensions greater than 0.5 times the central wavelength. The material of the clear layer can be polycrystalline or amorphous.

Abstract: A method for high-volume production of light emitting diodes with attached lenses involves providing pre-fabricated lenses, wherein the pre-fabricated lenses are held by a common transfer structure, simultaneously attaching the pre-fabricated lenses to respective ones of light emitting diodes, and releasing the pre-fabricated lenses from the common transfer structure. In an embodiment, the light emitting diodes are distributed in a pattern on a common substrate and the common transfer structure is configured to hold the pre-fabricated lenses in a pattern that corresponds to the pattern of the light emitting diodes on the common substrate. Further, to attach the pre-fabricated lenses to the light emitting diodes, the common transfer structure is positioned relative to the common substrate such that the pre-fabricated lenses are aligned with the light emitting diodes.

Abstract: Subwells are added to quantum wells of light emitting semiconductor structures to shift their emission wavelengths to longer wavelengths. Typical applications of the invention are to InGaAs, InGaAsSb, InP and GaN material systems, for example.