Abstract: An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.

Abstract: An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.

Abstract: An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

Abstract: A light source (25) for emitting collimated light (29) in particular for a large area luminaire (21) comprises a light guide unit (43) for guiding light by total internal reflection. The light guide unit comprises a plurality of localized light source regions (57) at a main front face (55A) for having light pass there through. The light source (25) further comprises a plurality of light emitting units (41) for emitting light into the light guide strips (91) through respective portions of the at least one coupling face (47) of the light guide unit (43), and a collimation unit (45) extending along the main front face (55A) and comprising a plurality of collimating elements. At least one light emitting unit (41) is configured as a light input coupling assembly (250) to receive collected natural light from a fiber (249) and to provide the received natural light to the light guide unit (43).

Abstract: An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

Abstract: A light source (25) for emitting collimated light (29) in particular for a large area luminaire (21) comprises a light guide unit (43) comprising a plurality of light guide strips (91) configured for guiding light received at the at least one lateral coupling face (47), for example, by total internal reflection. The light guide strips comprise a plurality of localized light source regions (57) at a main front face (55A) for having light pass there through, wherein the light source regions (57) are provided along the light guide strip (91) within a non-source region (59). The light source (25) further comprising a plurality of light emitting units (41) for emitting light into the light guide strips (91) through respective portions of the at least one coupling face (47), and a collimation unit (45) extending along the main front face (55A) and comprising a plurality of collimating elements.

Abstract: Small LED sources with high brightness and high efficiency apparatus including the small LED sources and methods of using the small LED sources are disclosed.

Abstract: A light source (25) for emitting collimated light (29) in particular for a large area luminaire (21) comprises a light guide unit (43) for guiding light by total internal reflection. The light guide unit comprises a plurality of localized light source regions (57) at a main front face (55A) for having light pass there through. The light source (25) further comprises a plurality of light emitting units (41) for emitting light into the light guide strips (91) through respective portions of the at least one coupling face (47) of the light guide unit (43), and a collimation unit (45) extending along the main front face (55A) and comprising a plurality of collimating elements. At least one light emitting unit (41) is configured as a light input coupling assembly (250) to receive collected natural light from a fiber (249) and to provide the received natural light to the light guide unit (43).

Abstract: Apparatus and methods of attaching accessories to LED lamps and for providing active accessories in LED lamps are disclosed. The active accessories include single-function active accessories as well as multi-function active accessories.

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

Abstract: Small LED sources with high brightness and high efficiency apparatus including the small LED sources and methods of using the small LED sources are disclosed.

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

Abstract: Techniques for processing materials for manufacture of gallium-containing nitride substrates are disclosed. More specifically, techniques for fabricating and reusing large area substrates using a combination of processing techniques are disclosed. The methods can be applied to fabricating substrates of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. Such substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, transistors, and others.

Abstract: Small LED sources with high brightness and high efficiency apparatus including the small LED sources and methods of using the small LED sources are disclosed.

Abstract: A light source (25) for emitting collimated light (29) in particular for a large area luminaire (21) comprises a light guide unit (43) comprising a plurality of light guide strips (91) configured for guiding light received at the at least one lateral coupling face (47), for example, by total internal reflection. The light guide strips comprise a plurality of localized light source regions (57) at a main front face (55A) for having light pass there through, wherein the light source regions (57) are provided along the light guide strip (91) within a non-source region (59). The light source (25) further comprising a plurality of light emitting units (41) for emitting light into the light guide strips (91) through respective portions of the at least one coupling face (47), and a collimation unit (45) extending along the main front face (55A) and comprising a plurality of collimating elements.

Abstract: Compact reflective lens for a high intensity light emitting diode light sources having improved output beam characteristics are disclosed. The reflective lenses can be configured to increase output intensity, control output light characteristics, and reduce glare.

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

Abstract: Techniques for processing materials for manufacture of gallium-containing nitride substrates are disclosed. More specifically, techniques for fabricating and reusing large area substrates using a combination of processing techniques are disclosed. The methods can be applied to fabricating substrates of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. Such substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, transistors, and others.