Abstract: A system includes an intraoral scanner that generates a plurality of intraoral images of a dental site and a computing device. The computing device receives the plurality of intraoral images of the dental site during the intraoral scan session, registers the plurality of intraoral images together based on overlapping data of the plurality of intraoral images to generate a virtual three-dimensional (3D) model of the dental site, and fills in one or more missing areas in the virtual 3D model using data from a historical template.

Abstract: A scanning system comprises an intraoral scanner to capture scan data of a dental site and a computing device to generate a 3D rendering of the dental site. The scanner comprises one or more input devices configured to provide manual interaction with the computing device, where: a first activation of the input device(s) causes the scanning system to enter the scan mode, wherein the 3D rendering has a first visualization during the scan mode; and a second activation of the input device(s) causes the scanning system to enter an overlay mode, wherein the 3D rendering has a second visualization during the overlay mode, wherein the computing device is to present a menu comprising menu options on the display while the scanning system is in the overlay mode, and wherein the scanner is usable to select among the presented menu options.

Abstract: A CMOS memory device includes source and drain regions diffused into a substrate, a polysilicon gate structure formed over a channel region located between the first and second diffusion regions, and a pre-metal dielectric structure formed over the polysilicon gate structure. The pre-metal dielectric structure is a triple layer structure including a lower Borophosphosilicate glass (BPSG) layer formed over the polysilicon gate structure, a Nitride layer formed on the lower BPSG layer, and an upper dielectric layer (e.g., BPSG or USG) formed on the Nitride layer. The Phosphorous concentration in the lower BPSG layer is greater than the Phosphorous concentration in the upper dielectric layer, thereby providing retention protection for the underlying memory structures while facilitating optimal chemical mechanical polishing (CMP) planarization characteristics.